Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    88-108 RF AMPLIFIER Search Results

    88-108 RF AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    88-108 RF AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    88-108 rf amplifier

    Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
    Text: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		AN1229 SD2932 SD2932. SD2932 88-108 rf amplifier 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k PDF

    inductor vk200

    Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		AN1229 SD2932 SD2932. SD2932 inductor vk200 RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier PDF

    neosid* 10k

    Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		AN1229 SD2932 SD2932. SD2932 neosid* 10k neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz PDF

    4cx20000d-9015

    Abstract: 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015
    Text: The EIMAC 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an electromechanical structure which provides high RF operating efficiency and low RF losses. The


    Original     		4CX20 000D/9015 SK-360 SK-336 000D/ 000D/9015 4cx20000d-9015 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015 PDF

    4cx20000d-9015

    Abstract: 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c
    Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CX20,000D/9015 The Eimac 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an


    Original     		4CX20 000D/9015 000D/9015 gs\carolyn\Desktop\Objects\4cx20000d-9015 4cx20000d-9015 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c PDF

    Pallet VHF Power Amplifier TELEVISION

    Abstract: Pallet VHF Power Amplifier AV600 LDU400C-R Tower Mounted Amplifiers Communications tower LDU300-R LDU300 Pallet UHF Power Amplifier LDU601C
    Text: LNA & Power Amplifier Selection Guide LNA & Power Amplifiers Richardson Electronics’ RF and Microwave Communications Group designs, tests and markets low noise amplifiers, amplifier pallets, amplifier modules and rack mount amplifiers used in Digital Broadcast DVB-T , Communications, Military Wireless Infrastructure


    Original     		Amplif-5033-801 G2000/MK080140/90461403 Pallet VHF Power Amplifier TELEVISION Pallet VHF Power Amplifier AV600 LDU400C-R Tower Mounted Amplifiers Communications tower LDU300-R LDU300 Pallet UHF Power Amplifier LDU601C PDF

    blf578

    Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
    Text: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power


    Original     		AN10800 BLF578 BLF578, AN10800 BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X PDF

    blf574

    Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
    Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract


    Original     		AN10714 BLF574 BLF574, AN10714 Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d PDF

    TUI-lf-9

    Abstract: ATC700B392JT50X
    Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched


    Original     		MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X PDF

    940 629 MOTOROLA 220

    Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
    Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance


    Original     		MRF158/D MRF158 940 629 MOTOROLA 220 MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS PDF

    gw 6203

    Abstract: AU-1291 MITEQ
    Text: MITEQ AU-1291 AMPLIFIER FREQUENCY MHz 0.01–500 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AU-1291 60 0.75 2.0:1 50/50 1.4 10 66 14 65 13 95 4 12 63 P1dB 62 61 11 10 60 9


    Original     		AU-1291 300staff, gw 6203 MITEQ PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Information: AI1115 80-105GHz Balanced Low Noise Amplifier GaAs Monolithic Microwave IC IN OUT UMS develops a balanced, four-stage, low noise monolithic amplifier which operates between 80 and 105GHz. This broadband amplifier delivers 16dB linear gain average from


    Original     		AI1115 80-105GHz 105GHz. 105GHz) 90GHz 100GHz V/115mA. substr69 PDF

    MRF6VP2600H

    Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT PDF

    ATC100B151J

    Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT PDF

    MRF6VP2600H

    Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 100fficers, MRF6VP2600H ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k PDF

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA1008-99F 80-105GHz Balanced Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1008-99F is a broadband, balanced, four-stage monolithic low noise amplifier. It is designed for Millimeter-Wave Imaging applications and can be use in commercial


    Original     		CHA1008-99F 80-105GHz CHA1008-99F 80-105GHz 90GHz 115mA DSCHA10082128 PDF

    PD-232

    Abstract: HER307 Motorola 581 MRF577 motorola 549 diode SF-11N MRF577T1 S212
    Text: MOTOROLA Order this document by MRF577T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices


    Original     		MRF577T1/D MRF577T1 70/SOT PD-232 HER307 Motorola 581 MRF577 motorola 549 diode SF-11N MRF577T1 S212 PDF

    300w amplifier

    Abstract: 500w audio amplifier assembling LDU400C 300w class ab amplifier RF Amplifier 500w 175 mhz ldu05 uhf 1kw amplifier fm mosfet amplifier 1kw THU2604 HF300-0130
    Text: RES Ltd. specializes in the design and manufacturing of FM, VHF and UHF amplifier pallets and systems for analog radio/television broadcast and digital television broadcast. All RES products, including the standard items inside, are available exclusively from Richardson Electronics.


    Original     		FM500-108C 125Wrms, 250Wrms 500Wrms THV400 1-800-RF G3000/BJ MK040221 300w amplifier 500w audio amplifier assembling LDU400C 300w class ab amplifier RF Amplifier 500w 175 mhz ldu05 uhf 1kw amplifier fm mosfet amplifier 1kw THU2604 HF300-0130 PDF

    BGY133

    Abstract: BGY132 PHILIPS 108 CAPACITOR Amplifier Modules VHF Amplifier Chip "Amplifier Modules" vHF amplifier module BGV132
    Text: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEATURES DESCRIPTION • Broadband VHF amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element


    OCR Scan     		BGY132; BGY133 BGY132 BGY133 -SOT132B 711D6Eb 00742L5 OT132B. PHILIPS 108 CAPACITOR Amplifier Modules VHF Amplifier Chip "Amplifier Modules" vHF amplifier module BGV132 PDF

    BGY36

    Abstract: BGY32 BGY33 BGY35 an power amplifier 108 mhz
    Text: Philips Semiconductors Product specification BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules PINNING - SOT132B FEATURESS • Broadband VHF amplifiers DESCRIPTION PIN • 18 W output power 1 RF input • Direct operation from 12 V vehicle electrical systems.


    OCR Scan     		BGY32; BGY33; BGY35; BGY36 BGY32, BGY35 BGY36 OT132B PINNING-SOT132B BGY32 BGY33 an power amplifier 108 mhz PDF

    d1047

    Abstract: BGY33 d1047* Transistor BGY36 88-108 rf amplifier vHF amplifier module capacitor polyester philips BGY32 BGY35 68-88MHz
    Text: Philips Semiconductors Product specification BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules PINNING - SOT132B FEATURESS • Broadband VHF amplifiers PIN • 18 W output power • Direct operation from 1 2 V vehicle electrical systems. APPLICATIONS


    OCR Scan     		BGY32; BGY33; BGY35; BGY36 OT132B BGY32, BGY35 BGY36 OT132B d1047 BGY33 d1047* Transistor 88-108 rf amplifier vHF amplifier module capacitor polyester philips BGY32 68-88MHz PDF

    SMA66-1

    Abstract: No abstract text available
    Text: W J - A 6 6 - 1 / S M A 6 6 - 1 10 to 1000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: < 3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 VOLTS TO 15 VOLTS


    OCR Scan     		A66-1 Compre27 DQ71D3 SMA66-1 PDF

    fx1115

    Abstract: vHF amplifier module RF POWER TRANSISTOR NPN vhf rf amplifier module VHF Amplifier Chip power rf
    Text: Philips Semiconductors Preliminary specification VHF amplifier module DESCRIPTION BGY145A PINNING -SOT183A The BGV145Aisa RF amplifier module, designed for use in transminers of mobile communications equipment powered by vehicles with 12.5 V battery supplies.


    OCR Scan     		BGY145A BGV145Aisa -SOT183A OT183A. fx1115 vHF amplifier module RF POWER TRANSISTOR NPN vhf rf amplifier module VHF Amplifier Chip power rf PDF