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    875* INTEL Search Results

    875* INTEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EN80C188XL-12 Rochester Electronics LLC 80C188XL - MPU Intel 186 CISC 16-Bit Visit Rochester Electronics LLC Buy
    EN80C188XL-20 Rochester Electronics LLC 80C188XL - MPU Intel 186 CISC 16-Bit Visit Rochester Electronics LLC Buy
    MD82C288-10/R Rochester Electronics LLC Replacement for Intel part number MD82C288-10. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    MD87C51/BQA Rochester Electronics LLC Replacement for Intel part number 5962-8768401QA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    MG87C196KC/B Rochester Electronics LLC Replacement for Intel part number MG87C196KC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    875* INTEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    multipoint abb temperature controller

    Abstract: cnet abb 2PAA101137 800xa modular plug RJ45 rj45 to 9pin serial abb 64 PIN plug abb s800 S800 S900
    Text: IndustrialIT System 800xA AC 870P – PM 875 Controller Data Sheet The PM 875 controller is a member of the Extended Automation System 800xA family. The PM 875 controller uses a 32 bit processor for maximum computing power and modular scalability. The integrated redundant PROFIBUS interface provides connectivity to ABBs


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    PDF 800xA 800xA multipoint abb temperature controller cnet abb 2PAA101137 modular plug RJ45 rj45 to 9pin serial abb 64 PIN plug abb s800 S800 S900

    Untitled

    Abstract: No abstract text available
    Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability


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    PDF TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability


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    PDF TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 11-Mar-11

    TSHA6501

    Abstract: TSHA6503 TSHA6500
    Text: TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability


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    PDF TSHA6500, TSHA6501, TSHA6502, TSHA6503 2002/95/EC 2002/96/EC TSHA650. 18-Jul-08 TSHA6501 TSHA6503 TSHA6500

    Untitled

    Abstract: No abstract text available
    Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability


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    PDF TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 18-Jul-08

    TSHA5202

    Abstract: No abstract text available
    Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm


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    PDF TSHA5200, TSHA5201, TSHA5202, TSHA5203 2002/95/EC 2002/96/EC TSHA520. 11-Mar-11 TSHA5202

    Untitled

    Abstract: No abstract text available
    Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm


    Original
    PDF TSHA5200, TSHA5201, TSHA5202, TSHA5203 2002/95/EC 2002/96/EC TSHA520. 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability


    Original
    PDF TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 2002/95/EC. 2011/65/EU.

    TSHA6203

    Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202
    Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability


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    PDF TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 11-Mar-11 TSHA6203 TSHA620 TSHA6200 TSHA6201 TSHA6202

    Untitled

    Abstract: No abstract text available
    Text: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability


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    PDF TSHA4400, TSHA4401 2002/95/EC 2002/96/EC TSHA440. 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    TSHA5203

    Abstract: No abstract text available
    Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm


    Original
    PDF TSHA5200, TSHA5201, TSHA5202, TSHA5203 2002/95/EC 2002/96/EC TSHA520. 18-Jul-08 TSHA5203

    TSHA6503

    Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502
    Text: TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability


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    PDF TSHA6500, TSHA6501, TSHA6502, TSHA6503 2002/95/EC 2002/96/EC TSHA650. 18-Jul-08 TSHA6503 TSHA650 TSHA6500 TSHA6501 TSHA6502

    TSHA6202

    Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6203 tsha-6203 sr 460 diode
    Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability


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    PDF TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 18-Jul-08 TSHA6202 TSHA620 TSHA6200 TSHA6201 TSHA6203 tsha-6203 sr 460 diode

    Untitled

    Abstract: No abstract text available
    Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm


    Original
    PDF TSHA5200, TSHA5201, TSHA5202, TSHA5203 2002/95/EC 2002/96/EC TSHA520. 2002/95/EC. 2011/65/EU.

    TSTA7100

    Abstract: No abstract text available
    Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


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    PDF TSTA7100 2002/95/EC 2002/96/EC TSTA7100 11-Mar-11

    INFRARED EMITTING DIODE TO18

    Abstract: No abstract text available
    Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


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    PDF TSTA7100 TSTA7100 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 INFRARED EMITTING DIODE TO18

    Untitled

    Abstract: No abstract text available
    Text: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity:  = ± 24°


    Original
    PDF TSHA6500 2002/96/EC 200/95/EC TSHA6500 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


    Original
    PDF TSTA7100 TSTA7100 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity:  = ± 24°


    Original
    PDF TSHA6500 2002/96/EC 200/95/EC TSHA6500 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


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    PDF TSTA7500 TSTA7500 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    TSHA5202

    Abstract: TSHA520 TSHA5200 TSHA5201 TSHA5203
    Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: λp = 875 nm


    Original
    PDF TSHA5200, TSHA5201, TSHA5202, TSHA5203 2002/95/EC 2002/96/EC TSHA520. 11-Mar-11 TSHA5202 TSHA520 TSHA5200 TSHA5201 TSHA5203

    Untitled

    Abstract: No abstract text available
    Text: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


    Original
    PDF TSTA7500 TSTA7500 2002/95/EC 2002/96/EC 11-Mar-11

    TSTA7100

    Abstract: No abstract text available
    Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


    Original
    PDF TSTA7100 2002/95/EC 2002/96/EC TSTA7100 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity


    Original
    PDF TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A