XY-6060
Abstract: 3421A fluke T17 H331
Text: SEPTEMBER 27,1991 TEST REPORT # 91412 VERIFICATION TESTING 17X17 PGA SOCKET UF SAMTE APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. 1 Contech Research This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It
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17X17
MIL-STD-45662,
2190A
O/24/91
S/21/91
12336A02027
PGM7-146C
P36-1604
XY-6060
XY-6060
3421A
fluke T17
H331
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3g mobile MOTHERBOARD CIRCUIT diagram
Abstract: H55S1222EFP mobile MOTHERBOARD CIRCUIT diagram H55s1222
Text: 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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128MBit
4Mx32bit)
1128Mbit
H55S1222EFP
32bits
200us
3g mobile MOTHERBOARD CIRCUIT diagram
mobile MOTHERBOARD CIRCUIT diagram
H55s1222
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AS5C4009CW
Abstract: AS5C4009
Text: SRAM AS5C4009 Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention
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AS5C4009
32-Pin
STD-8831
-55oC
125oC
-40oC
85oC3
AS5C4009CW
AS5C4009
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H55S1262EFP
Abstract: No abstract text available
Text: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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128MBit
8Mx16bit)
128Mbit
H55S1262EFP
16bits
200us
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smd A9
Abstract: smd transistor A8 AS5C4009LL 54321
Text: SRAM AS5C4009LL Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention
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AS5C4009LL
32-Pin
STD-8831
-55oC
125oC
-40oC
85oC3
smd A9
smd transistor A8
AS5C4009LL
54321
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Untitled
Abstract: No abstract text available
Text: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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PDF
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128MBit
8Mx16bit)
128Mbit
H55S1262EFP
16bits
200us
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9668e
Abstract: SR 13009 BY284 455e 2246 09 06 232 6843 9826e MAR 618 transistor MS1324 RX3 0633
Text: Product Characterization Report for the SP3243 Family of Products Prepared By: Velvet Doung & Greg West Date: Aug 17, 2006 SP3243 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure Data Summary for Key Parameters
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SP3243
SP3243
084E03
059E03
000E03
SP3243EBEA_
MS1324
9668e
SR 13009
BY284
455e
2246
09 06 232 6843
9826e
MAR 618 transistor
MS1324
RX3 0633
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Untitled
Abstract: No abstract text available
Text: SRAM AS5C4009 LL Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION (Top View) 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention
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STD-8831
AS5C4009
32-Pin
-55oC
125oC
-40oC
85oC3
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Untitled
Abstract: No abstract text available
Text: 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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Original
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PDF
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128MBit
4Mx32bit)
1128Mbit
H55S1222EFP
32bits
200us
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AS5C4009
Abstract: smd transistor marking A11
Text: SRAM AS5C4009 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention (0.2mW MAX worst case Power-down standby)
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AS5C4009
32-Pin
STD-8831
-55oC
125oC
-40oC
85oC3
AS5C4009
smd transistor marking A11
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H55S1262EFP
Abstract: No abstract text available
Text: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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Original
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PDF
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128MBit
8Mx16bit)
128Mbit
H55S1262EFP
16bits
200us
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512 X 32 SRAM
Abstract: AS5C4009 198765 asi 320
Text: SRAM AS5C4009 Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention
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AS5C4009
32-Pin
STD-8831
-55oC
125oC
-40oC
85oC3
512 X 32 SRAM
AS5C4009
198765
asi 320
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