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    850 NM INFRARED EMITTING DIODE SMD Search Results

    850 NM INFRARED EMITTING DIODE SMD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    850 NM INFRARED EMITTING DIODE SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vsmy3850gs08

    Abstract: vsmy3850 VSMY3850-GS08
    Text: VSMY3850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 DESCRIPTION VSMY3850 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, high


    Original     		PDF VSMY3850 J-STD-020 2002/95/EC 2002/96/EC VSMY3850 11-Mar-11 vsmy3850gs08 VSMY3850-GS08

    Untitled

    Abstract: No abstract text available
    Text: VSMY3850X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • • 94 8553 DESCRIPTION VSMY3850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity,


    Original     		PDF VSMY3850X01 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMY3850X01 18-Jul-08

    CECC00802

    Abstract: J-STD-020B VSMG3700 VSMG3700-GS08 VSMG3700-GS18
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.


    Original     		PDF VSMG3700 VSMG3700 08-Apr-05 CECC00802 J-STD-020B VSMG3700-GS08 VSMG3700-GS18

    Untitled

    Abstract: No abstract text available
    Text: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant


    Original     		PDF TSMG3700 TSMG3700 08-Apr-05

    TSMG3700

    Abstract: TSMG3700-GS08 TSMG3700-GS18
    Text: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant


    Original     		PDF TSMG3700 TSMG3700 D-74025 08-Mar-05 TSMG3700-GS08 TSMG3700-GS18

    Untitled

    Abstract: No abstract text available
    Text: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant


    Original     		PDF TSMG3700 TSMG3700 08-Apr-05

    Infrared led 850 smd

    Abstract: GaAs 850 nm Infrared Emitting Diode 850 nm Infrared Emitting Diode VCSEL array, 850nm smd plcc-2 infrared diode 850 nm Infrared Emitting Diode smd vcsel SMD INF226 infrared transistor
    Text: Infrared Light Emitting Diode OP180 & OP280 Series Features: • • • • • • • High power GaAs—OP180, 940 nm center wavelength High power GaAIAs—OP280K and OP280KT, 875 nm center wavelength VCSEL GaAlAs-OP280V, 850 nm center wavelength Point Source GaAlAs-OP280PS, 850 nm center wavelength


    Original     		PDF OP180 OP280 GaAs--OP180, GaAIAs--OP280K OP280KT, GaAlAs-OP280V, GaAlAs-OP280PS, OP180 OP280K, OP280KT Infrared led 850 smd GaAs 850 nm Infrared Emitting Diode 850 nm Infrared Emitting Diode VCSEL array, 850nm smd plcc-2 infrared diode 850 nm Infrared Emitting Diode smd vcsel SMD INF226 infrared transistor

    Untitled

    Abstract: No abstract text available
    Text: VSMY3850X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: p = 850 nm


    Original     		PDF VSMY3850X01 J-STD-020 AEC-Q101 VSMY3850X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    VSMY2853SL

    Abstract: No abstract text available
    Text: VSMY2853SL www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: side view • Dimensions L x W x H in mm : 2.3 x 2.55 x 2.3 • Peak wavelength: p = 850 nm


    Original     		PDF VSMY2853SL VSMY2853SL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VSMY2853SL www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: side view • Dimensions L x W x H in mm : 2.3 x 2.55 x 2.3 • Peak wavelength: λp = 850 nm


    Original     		PDF VSMY2853SL reVSMY2853SL 28-Mar-13

    Untitled

    Abstract: No abstract text available
    Text: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm


    Original     		PDF VSMY3850 J-STD-020 VSMY3850 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VSMG3700 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm


    Original     		PDF VSMG3700 VSMG3700 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm


    Original     		PDF VSMY3850 J-STD-020 VSMY3850 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VSMG10850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH FEATURES • Package type: Surface mount • Package form: Side view • Dimensions L x W x H in mm : 3 x 2 x 1 • Peak wavelength: p = 850 nm • High reliability


    Original     		PDF VSMG10850 VSMG10850 VEMD10940F J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    J-STD-020D

    Abstract: VSMG3700 VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMG3700 VSMG3700 18-Jul-08 J-STD-020D VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd

    Untitled

    Abstract: No abstract text available
    Text: VSMG10850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH FEATURES • Package type: Surface mount • Package form: Side view • Dimensions L x W x H in mm : 3 x 2 x 1 • Peak wavelength: p = 850 nm • High reliability


    Original     		PDF VSMG10850 VEMD10940F VSMG10850 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    J-STD-020D

    Abstract: VSMG3700 VSMG3700-GS08 VSMG3700-GS18
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm


    Original     		PDF VSMG3700 VSMG3700 18-Jul-08 J-STD-020D VSMG3700-GS08 VSMG3700-GS18

    Untitled

    Abstract: No abstract text available
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMG3700 VSMG3700 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 2011/65/EU 2002/95/EC. 2011/65/EU.

    BPW41 circuit application

    Abstract: OSRAM IR emitter
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 2002/95/EC. 2011/65/EU. JS709A BPW41 circuit application OSRAM IR emitter

    VSMG3700

    Abstract: VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMG3700 VSMG3700 18-Jul-08 VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd

    Untitled

    Abstract: No abstract text available
    Text: VSMY98545 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: high power SMD with lens • Dimensions L x W x H in mm : 3.85 x 3.85 x 2.24 •


    Original     		PDF VSMY98545 VSMY98545 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VSMY98545 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: High power SMD with lens • Dimensions L x W x H in mm : 3.85 x 3.85 x 2.24 •


    Original     		PDF VSMY98545 VSMY98545 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12