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    846 TRANSISTOR Search Results

    846 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    846 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a144e

    Abstract: c144e 96484 C144-E 94S-846-A144E
    Text: Transistors UMB6N / IMB6A UMH6N / IMH6A 94S-846-A144E (96-484-C144E) 591


    Original     		PDF 94S-846-A144E) 96-484-C144E) a144e c144e 96484 C144-E 94S-846-A144E

    transistors BC 23

    Abstract: 849B 847C 848B
    Text: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1


    Original     		PDF OT-23 O-236) UL94V-0 transistors BC 23 849B 847C 848B

    Untitled

    Abstract: No abstract text available
    Text: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1


    Original     		PDF OT-23 O-236) UL94V-0

    Untitled

    Abstract: No abstract text available
    Text: BC 846 . BC 850 Surface mount NPN-Si-Epitaxial PlanarTransistors NPN-Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 310 mW Plastic case Kunststoffgehäuse SOT-23 TO-236 Weight approx. – Gewicht ca.


    Original     		PDF OT-23 O-236) UL94V-0

    C1507

    Abstract: b 857 Q62702-C1741 sot-23 marking 1Fs sot-23 marking 3Fs 1Bs sot-23 bc 750 sot-23 MARKING CODE 1Gs C1741 C1761
    Text: NPN Silicon AF Transistors ● ● ● ● ● BC 846 . BC 850 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP


    Original     		PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 C1507 b 857 Q62702-C1741 sot-23 marking 1Fs sot-23 marking 3Fs 1Bs sot-23 bc 750 sot-23 MARKING CODE 1Gs C1741 C1761

    C1507

    Abstract: BC856 bc857 bc856b b 857 bc npn sot-23 marking 3Fs h11E Q62702-C1851 Q62702-C1887
    Text: PNP Silicon AF Transistors BC 856 . BC 860 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 NPN


    Original     		PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 C1507 BC856 bc857 bc856b b 857 bc npn sot-23 marking 3Fs h11E Q62702-C1851 Q62702-C1887

    1Bs sot-23

    Abstract: sot-23 marking 1Fs 849B 1gs SOT-23 847C 848B 849C 850C SOT-23 marking 2Gs VC30
    Text: BC 846 . BC 850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856, BC 857, BC 858 BC 859, BC 860 PNP


    Original     		PDF OT-23 Nov-11-1999 120Hz 1Bs sot-23 sot-23 marking 1Fs 849B 1gs SOT-23 847C 848B 849C 850C SOT-23 marking 2Gs VC30

    C1741

    Abstract: Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC
    Text: NPN Silicon AF Transistors BC 846 . BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP


    Original     		PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 C1741 Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC

    Untitled

    Abstract: No abstract text available
    Text: BC 846 . BC 850 Surface mount NPN-Si-Epitaxial PlanarTransistors NPN-Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung B 1.3 ±0.1 C 2.5 max 0.4 Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 310 mW E Dimensions / Maße in mm


    Original     		PDF OT-23 O-236) UL94V-0 tter\Transistoren\bc846

    306-061

    Abstract: Optical proximity sensor through beam 307-913 rs 306-061 DC solid state relay 12vdc opto-switch 307913 5A Solid State RELAY IC opto-switch optoswitch solid state variable relay
    Text: Issued March 1997 232-3175 Data Pack E Data Sheet Optical proximity switch system RS stock numbers 633-616, 633-818, 633-824, 633-830, 633-846, 633-852, 633-868 The RS optical proximity switch interface board with associated photoheads or opto-switches form a low


    Original     		PDF 12Vdc 100mA 306-061 Optical proximity sensor through beam 307-913 rs 306-061 DC solid state relay 12vdc opto-switch 307913 5A Solid State RELAY IC opto-switch optoswitch solid state variable relay

    BC sot23

    Abstract: sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23
    Text: BC 856 . BC 860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846, BC 847, BC 848 2 BC 849, BC 850 NPN


    Original     		PDF OT-23 Sep-28-1999 120Hz BC sot23 sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23

    C2310

    Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
    Text: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,


    Original     		PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 C2310 transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW

    7473 pin diagram

    Abstract: pin diagram of 7473 RF Prime X band attenuator cpi twt india cpi CPI VZU 6900K6 6900K4 VZU-6991K4
    Text: 6900K4 Series 20 Watt Power Amplifier Features Description • • • • 4.0 TO 18 GHz Octave Bandwidths or Greater Optional GPIB Control One Year Warranty Unlimited Hours • Worldwide Support Centers • 24 Hour Hotline for customer support (800) 231-4818 or 1-650-846-3700


    Original     		PDF 6900K4 89/336/EEC 7473 pin diagram pin diagram of 7473 RF Prime X band attenuator cpi twt india cpi CPI VZU 6900K6 VZU-6991K4

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    sot-23 MARKING CODE 1Gs

    Abstract: bc 846 BC850 BC846
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


    OCR Scan     		PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 sot-23 MARKING CODE 1Gs bc 846 BC850 BC846

    F21E

    Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


    OCR Scan     		PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 F21E transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp

    bc847bc

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistors BC 856. BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,


    OCR Scan     		PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 bc847bc

    bc856

    Abstract: bc 856
    Text: SIEM ENS PNP Silicon AF Transistors BC 856 . BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,


    OCR Scan     		PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 bc856 bc 856

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2846 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2 S K2 846 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2 APPLICATIONS


    OCR Scan     		PDF 2SK2846

    transistor bc 487

    Abstract: transistor bc 488 sot-323 transistor marking code 15
    Text: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


    OCR Scan     		PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 transistor bc 487 transistor bc 488 sot-323 transistor marking code 15

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 856 . BC 860 PNP Silicon AF Transistors F eatures • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: B C 846, BC 847,


    OCR Scan     		PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 62702-C1698 Q62702-C1507 62702-C1887 62702-C1774

    LT 450 mbr

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,


    OCR Scan     		PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702 LT 450 mbr

    transistor c2311

    Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


    OCR Scan     		PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 62702-C2311 transistor c2311 transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660

    44E SOT-23

    Abstract: SOT-23 MARKING 1DP 1dp sot-23 SOT-23 MARKING 1GP code 1gp BC846 marking 1Gp BC846B BC847 BC847B
    Text: •I b bS 3 lì31 GQ24M53 *44^ HIAPX N AUER PHILIPS/DISCRETE B C 846 BC847 BC848 fc.7E 1> 7 V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE D A T A Collector-emitter voltage {V g g = 0


    OCR Scan     		PDF GQ24453 BC846 BC847 BC848 OT-23 BC846 BC847 35MHz 44E SOT-23 SOT-23 MARKING 1DP 1dp sot-23 SOT-23 MARKING 1GP code 1gp marking 1Gp BC846B BC847B