Untitled
Abstract: No abstract text available
Text: EVAL-ADIsimPower User Guide UG-842 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Assembly Tips for the Blank Evaluation ADIsimPower Board OVERVIEW The ADIsimPower EVAL-ADIsimPower blank/unpopulated
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UG-842
UG13236-0-7/15
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KU 601
Abstract: FLK027WG FLK027
Text: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general
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FLK027WG
FLK027WG
KU 601
FLK027
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Untitled
Abstract: No abstract text available
Text: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general
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FLK027WG
FLK027WG
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FLK027WG
Abstract: No abstract text available
Text: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general
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FLK027WG
FLK027WG
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FLK027WG
Abstract: No abstract text available
Text: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general
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FLK027WG
FLK027WG
FCSI0598M200
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FLK027WG
Abstract: No abstract text available
Text: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general
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FLK027WG
FLK027WG
FCSI0598M200
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FLK027WG
Abstract: No abstract text available
Text: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general
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FLK027WG
FLK027WG
PT4888
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BL01RN1-A62
Abstract: vapc PF1010A Hitachi DSA00311
Text: PF1010A MOS FET Power Amplifier Module for P/C LAN ADE-208-106A Z 2nd. Edition July 1996 Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Loe voltage operation: 6 V Low power control current: 300 µA Typ
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PF1010A
ADE-208-106A
BL01RN1-A62-001
BL01RN1-A62
vapc
PF1010A
Hitachi DSA00311
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Untitled
Abstract: No abstract text available
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
FCSI0797M200
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FLL300IP-4
Abstract: No abstract text available
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
FCSI0797M200
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fll300ip
Abstract: No abstract text available
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
fll300ip
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FLL300IP-4
Abstract: FLL30
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
FCSI0797M200
FLL30
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FLL300IP-4
Abstract: 15 GHz power amplifier Output Power 37dBm Fujitsu GaAs FET Amplifier fujitsu gaas fet L-band
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
FCSI0797M200
15 GHz power amplifier Output Power 37dBm
Fujitsu GaAs FET Amplifier
fujitsu gaas fet L-band
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50ht2
Abstract: BL01RN1-A62 vapc PF1010A Hitachi DSA0064
Text: PF1010A MOS FET Power Amplifier Module for P/C LAN ADE-208-106A Z 2nd. Edition July 1996 Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Low voltage operation: 6 V Low power control current: 300 µA Typ
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PF1010A
ADE-208-106A
BL01RN1-A62-001
A2000
D-85622
50ht2
BL01RN1-A62
vapc
PF1010A
Hitachi DSA0064
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FLk052
Abstract: No abstract text available
Text: FLK052XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a power GaAs FET that is designed for
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FLK052XV
FLK052XV
FLk052
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FLK052xv
Abstract: No abstract text available
Text: FLK052XV Füjrrsu GaAs FE T and H E M T Chips FEATURES • • • • High O utput Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ g = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a pow er G aAs FET that is designed for
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FLK052XV
FLK052XV
25\xm
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Untitled
Abstract: No abstract text available
Text: PFIOIOA MOS FET Power Amplifier Module for P/C LAN HITACHI Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Low voltage operation: 6 V Low power control current: 300 jiA Typ Pin Arrangement
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ADE-208-106A
D-85622
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fujitsu gaas fet
Abstract: FLK027WG FLK027
Text: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general
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FLK027WG
FLK027WG
FCSI0598M200
fujitsu gaas fet
FLK027
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Untitled
Abstract: No abstract text available
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
FCSI0797M200
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ne71084
Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package
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S3200
NE87300
NE76000
NE24283B
ne71084
GaAs MESFET
NE25139
NE4200
NE32684A
NE71000
71083
ne72089
NE72000
MESFET Application
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equivalent irf840
Abstract: 2SK173 2N6658 BUZ44 vn0106n1 VN64GA BUZ 840 VN0104N4 VN0106N5 IRF232
Text: Silico n ix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
equivalent irf840
2SK173
2N6658
BUZ44
vn0106n1
VN64GA
BUZ 840
VN0104N4
VN0106N5
IRF232
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VN64GA
Abstract: 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 IRF152
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
VN64GA
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
IRF142
IRF150
IRF152
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IRF440
Abstract: IRF450 irf420 IRF340 IRF350 IRF740 IRF820 IRF840 VNP002A
Text: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220
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O-220
O-237
O-202
IRF450
IRF840
IRF440
VN5001D/IRF830
VNP002A*
IRF820
VN5001A/IRF430
irf420
IRF340
IRF350
IRF740
VNP002A
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VN64GA
Abstract: irf840 TD4A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 VNP002A
Text: Ü Ü A C D ^ U / C D M i v i a D r/\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BVqss Volts 450-500 TO-3 TO-220 Siliconix
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O-220
O-237
O-202
IRF450
IRF840
IRF440
VN5001D/IRF830
VNP002A*
IRF820
VN5001A/IRF430
VN64GA
TD4A
IRF340
IRF350
IRF740
VNP002A
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