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    839 TRANSISTOR Search Results

    839 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    839 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-839

    Abstract: DS3883A DS3884A DS3885 DS3886A
    Text: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL


    Original     		PDF 64-bit DS3884A) DS3885) an011487 AN-839 DS3883A DS3884A DS3885 DS3886A

    case transistor 79A

    Abstract: tel 839 b AN-839 C1996 DS3883A DS3884A DS3885 DS3886A
    Text: National Semiconductor Application Note 839 Joel Martinez Stephen Kempainen July 1992 INTRODUCTION Futurebus a systems designed today have bus widths of 32 or 64 To support higher bandwidths in the future Futurebus a provides a data width extension of up to 256 bits BTL


    Original     		PDF 64-bit DS3884A) DS3885) case transistor 79A tel 839 b AN-839 C1996 DS3883A DS3884A DS3885 DS3886A

    AN-839

    Abstract: DS3883A DS3884A DS3885 DS3886A
    Text: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL


    Original     		PDF 64-bit DS3884A) DS3885) an011487 AN-839 DS3883A DS3884A DS3885 DS3886A

    AN-839

    Abstract: DS3883A DS3884A DS3885 DS3886A
    Text: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL


    Original     		PDF 64-bit DS3884A) DS3885) AN-839 DS3883A DS3884A DS3885 DS3886A

    HT 1000-4 power amplifier

    Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
    Text: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION


    Original     		PDF 75WATT HT 1000-4 power amplifier triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics


    Original     		PDF OPB0462 135um 500uA

    OPB1104

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm


    Original     		PDF OPB1104 130um 500uA OPB1104

    OPB0462

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um Ta=25℃


    Original     		PDF OPB0462 135um 500uA OPB0462

    OPB0422

    Abstract: 839 transistor transistor 835
    Text: Silicon Photo Transistor OPB0422 1. Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um Ta=25℃


    Original     		PDF OPB0422 415mm 415mm 138um 138um 500uA OPB0422 839 transistor transistor 835

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0422 1. Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics


    Original     		PDF OPB0422 415mm 415mm 138um 138um 500uA

    835 CB

    Abstract: OPB0808 transistor 835
    Text: Silicon Photo Transistor OPB0808 1. Structure 1.1 Chip Size : 0.80mm X 0.80mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 140um - Base : 100um X 100um 1.6 Active Area : 0.64mm X 0.64mm


    Original     		PDF OPB0808 140um 100um 100um 500uA 835 CB OPB0808 transistor 835

    OPB0606

    Abstract: transistor c 839
    Text: Silicon Photo Transistor OPB0606 1. Structure 1.1 Chip Size : 0.61mm X 0.61mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 155um X 155um - Base : 90um X 90um 2. Guaranteed Probed Electrical Characteristics


    Original     		PDF OPB0606 155um 155um 500uA RL-1000 OPB0606 transistor c 839

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm


    Original     		PDF OPB1104 130um 500uA

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0606 1. Structure 1.1 Chip Size : 0.61mm X 0.61mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 155um X 155um - Base : 90um X 90um 2. Guaranteed Probed Electrical Characteristics


    Original     		PDF OPB0606 155um 155um 500uA RL-1000

    ic 8259

    Abstract: OPB0642 opb064
    Text: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode


    Original     		PDF OPB0642 160um 000lux 2856K. 100uA ic 8259 OPB0642 opb064

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0505P 1. Structure 1.1 Chip Size : 0.50mm X 0.50mm 1.2 Chip thickness : 180 20um 1.3 Metallization : Top - Al, Bottom - Cr-Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 120 X 120um - Base : 60um X 60um 2. Electrical Characteristics


    Original     		PDF OPB0505P 120um 100uA

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220 30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode


    Original     		PDF OPB0642 160um 000lux 2856K. 100uA

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0808 1. Structure 1.1 Chip Size : 0.80mm X 0.80mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 140um - Base : 100um X 100um 1.6 Active Area : 0.64mm X 0.64mm


    Original     		PDF OPB0808 140um 100um 100um 500uA

    839 transistor

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB1204 1. Structure 1.1 Chip Size : 1.2mm X 0.45mm 1.2 Chip thickness : 230±20um 1.3 Metallization : Top - Al 2um , Bottom - Au 1.4 Back Metal : Au(1,000Å) 1.5 Passivation : Silicon Nitride 1.6 Bonding Pad Size : Emitter Electrode


    Original     		PDF OPB1204 130um 000lux 2856K. 500uA RL-1000 839 transistor

    OPB0604

    Abstract: 839 transistor
    Text: Silicon Photo Transistor OPB0604 1. Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um : Emitter Electrode : Base Electrode


    Original     		PDF OPB0604 130um 000lux 2856K. 500uA RL-1000 OPB0604 839 transistor

    2SC326

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3264 Features • NPN Silicon Transistors With MT-200 package Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage


    Original     		PDF 2SC3264 MT-200 MT-200 12Vdc) 25mAdc) 2SC326

    Untitled

    Abstract: No abstract text available
    Text: BD840 BD842 BD844 SILICON PLANAR EPITAXIAL POWER TRANSISTORS P N-P silicon transistors, in a plastic T 0 -2 0 2 package, recom m ended fo r use in television circuits and audio applications. N-P-N com plem ents are BD 839, BD841 and BD843. QUICK REFERENCE DATA


    OCR Scan     		PDF BD840 BD842 BD844 BD841 BD843. BD844

    2SA939

    Abstract: 2SA939 B 2SA839 HI-FI AMP 200X2mm 2SA839-0 sfik
    Text: 2 s a 839 " ^ v i i y p N ^ P = m m * y & ^ y y z 5> SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR o ismmntimmm o mmmnttmmm o Audio Power Amplifier Applications o Driver Stage Amplifier Applications • S if f l E T -i - : • asm* v CE0 = - 150 V Hi-Fi 2 S C 1 6 69 k


    OCR Scan     		PDF 2sa839 -150V 8SC1669 220AB 8-10A1A 2SA939 2SA839â 2SA839-Y 200X2mm 2SA939 B 2SA839 HI-FI AMP 2SA839-0 sfik

    d844

    Abstract: Transistors BD 330
    Text: ^[ _ PHILIPS INTERNATIONAL BD840 BD842 BD844 SbE D • 7110fl2b 00M303L. 34T « P H I N T-33-l T SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0-2 0 2 envelope, recommended for use in television circuits and


    OCR Scan     		PDF BD840 BD842 BD844 7110fl2b 00M303L. BD841 BD843. d844 Transistors BD 330