650nm 5mw laser module
Abstract: 650NM laser diode 5mw QL65D6SA QSI 650 QL65
Text: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65D6SA InGaAlP Laser Diode
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QL65D6SA
QL65D6SA
650nm
650nm 5mw laser module
650NM laser diode 5mw
QSI 650
QL65
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850nm 5mw laser diode
Abstract: 1550 laser diode B 1359 Dual Wave laser diode 1550 communication laser diode 1550nm communication laser diode 1550nm laser diode Laser Diode 850nm 1300nm laser diode 1550 nm SMJ-3S3A-1300
Text: 219 Westbrook Rd, Carp, ON, Canada, K0A 1L0 Toll Free: 1-800-361-5415 Tel: 613 831-0981 Fax:(613) 836-5089 E-mail: sales@ozoptics.com VISOR TM BASED DUAL LASER DIODE SOURCE Features: • Dual wavelength laser diode sources, with interchangeable modules: four
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GEL-01,
850nm 5mw laser diode
1550 laser diode
B 1359
Dual Wave laser diode
1550 communication laser diode
1550nm communication laser diode
1550nm laser diode
Laser Diode 850nm 1300nm
laser diode 1550 nm
SMJ-3S3A-1300
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HSC276A
Abstract: No abstract text available
Text: HSC276A Silicon Schottky Barrier Diode for Mixer REJ03G0600-0100 Previous: ADE-208-836 Rev.1.00 Apr 13, 2005 Features • High forward current, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information
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HSC276A
REJ03G0600-0100
ADE-208-836)
PWSF0002ZA-A
Unit2607
HSC276A
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Untitled
Abstract: No abstract text available
Text: HSC276A Silicon Schottky Barrier Diode for Mixer REJ03G0600-0100 Previous: ADE-208-836 Rev.1.00 Apr 13, 2005 Features • High forward current, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information
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HSC276A
REJ03G0600-0100
ADE-208-836)
HSC276A
PWSF0002ZA-A
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OZ Optics Fiber pigtail AR coating
Abstract: Laser Diode 1550nm 1300nm 1550nm laser diode Radial sma OPTICAL FIBER LDC-21A laser coupler LASER DISTANCE METER SMA 905 fiber dimensions laser diodes for optical source lens laser diode
Text: OZ OPTICS LTD. 219 WESTBROOK RD, CARP, ON, CANADA, K0A 1L0 TEL: 613 831-0981 FAX: (613) 836-5089 E-MAIL: sales@ozoptics.com WEBSITE: www.ozoptics.com LASER DIODE TO FIBER COUPLERS A: 0.708" B: 0.552" D: 0.275" L: 0.650" L Ø: 0.086" Lens A B Laser Diode
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-40dB
OZ Optics Fiber pigtail AR coating
Laser Diode 1550nm 1300nm
1550nm laser diode
Radial sma OPTICAL FIBER
LDC-21A
laser coupler
LASER DISTANCE METER
SMA 905 fiber dimensions
laser diodes for optical source
lens laser diode
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HSC276A
Abstract: DSA003644
Text: HSC276A Silicon Schottky Barrier Diode for Mixer ADE-208-836 Z Rev. 0 Feb. 2000 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code
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HSC276A
ADE-208-836
HSC276A
DSA003644
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HSC276A
Abstract: Hitachi DSA0047
Text: HSC276A Silicon Schottky Barrier Diode for Mixer ADE-208-836 Z Rev 0 Feb. 2000 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code
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HSC276A
ADE-208-836
HSC276A
Hitachi DSA0047
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peltier driver
Abstract: SMA905 1550nm led diode Peltier 1550 laser diode sLED 1550nm 2 Wavelength Laser Diode LED 1550nm peltier cooler SMA-905
Text: OZ OPTICS LTD. 219 WESTBROOK RD, CARP, ON, CANADA, K0A 1L0 TEL: 613 831-0981 FAX:(613) 836-5089 E-MAIL: sales@ozoptics.com WEB SITE: www.ozoptics.com FIBER PIGTAILED TEMPERATURE CONTROLLED LASER DIODE HOUSING FEATURES: • • • • • • • • •
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SMA905
SMA906
peltier driver
SMA905
1550nm led diode
Peltier
1550 laser diode
sLED 1550nm
2 Wavelength Laser Diode
LED 1550nm
peltier cooler
SMA-905
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600 um laser fiber medical
Abstract: L929 Peltier element L9399 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser
Text: FIBER-OUTPUT CW LASER DIODES L9399 Figure 1: Radiant Output Power vs. Forward Current Typ. 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 ( Top(c) = 20 °C ) 100 Relative Radiant Output Power (%) Radiant Output Power Φe (W) Figure 2: Emission Spectrum (Typ.)
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L9399
L9399
600 um laser fiber medical
L929
Peltier element
836 DIODE
LLD1012E01
836 DIODE current
"Peltier element"
AL7 1BW
CW Laser
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U 806 DI
Abstract: 836 DIODE tp 806
Text: tSENSITRON SPM6G050-060D SEMICONDUCTOR TECHNICAL DATA DATA SHEET 836, REV. A Three Phase IGBT Bridge, With Gate Drivers & Optical Isolation Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS
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SPM6G050-060D
/-20V
125oC
U 806 DI
836 DIODE
tp 806
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836 DIODE
Abstract: pin diode 836 DIODE current AN275 APP275 MAX2265 MAX2266 MAX2269 SMP1321-079 AN-275
Text: Maxim > App Notes > BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Keywords: CDMA, cellular band, power amplifier, PAE, power added effiency, power-added effiency, ACPR, cellular-band PA, cell band PA, cell-band PA, power amp Sep 01, 2000 APPLICATION NOTE 275
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MAX2266
15dBm
13dBm.
15dBm,
-46dBc.
com/an275
MAX2266:
AN275,
836 DIODE
pin diode
836 DIODE current
AN275
APP275
MAX2265
MAX2269
SMP1321-079
AN-275
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836 DIODE
Abstract: SPM6G050-060D
Text: SENSITRON SEMICONDUCTOR SPM6G050-060D TECHNICAL DATA DATA SHEET 836, REV. B Three Phase IGBT Bridge, With Gate Drivers & Optical Isolation Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS
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SPM6G050-060D
/-20V
836 DIODE
SPM6G050-060D
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Si4624DY
Abstract: SiP12203 si4624 POWERPAK SO8 mosfet IC MOSFET QG AN607 AN608 SI4622DY Si4642DY
Text: VISHAY SILICONIX Power ICs and Power MOSFETs Application Note 836 Selection of MOSFETs for DC/DC Synchronous Buck Controllers: SiP12201 Single 10 A Controller and SiP12203 Triple Step Down Controller IC for 2 Synchronous and 1 Linear Power Rail Simon Foley
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SiP12201
SiP12203
02-Oct-08
Si4624DY
si4624
POWERPAK SO8
mosfet
IC MOSFET QG
AN607
AN608
SI4622DY
Si4642DY
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836 DIODE current
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G050-060D TECHNICAL DATA DATA SHEET 836, REV. B Three Phase IGBT Bridge, With Gate Drivers & Optical Isolation Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS
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SPM6G050-060D
/-20V
125oC
836 DIODE current
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ptx1
Abstract: GPS SAW filter
Text: TQP4M3007 Preliminary data sheet SP3T High Power 2.7V CDMA Antenna Switch Features: • SLP-12 Packaged PHEMT GaAs MMIC Die • Small Footprint 3.0 x 3.0 mm • • Excellent Crossmodulation Performance -100 dBm Typ @ Cellular (PTx1 = 22.5 dBm @ 836 MHz, PTx2 = 22.5 dBm
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TQP4M3007
SLP-12
ptx1
GPS SAW filter
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Untitled
Abstract: No abstract text available
Text: TQP4M3007 Preliminary data sheet SP3T High Power 2.7V CDMA Antenna Switch Features: MLP-12 lead 3 x 3 mm Package Outline: • MLP-12 Packaged PHEMT GaAs MMIC Die • Small Footprint 3.0 x 3.0 mm • Excellent Crossmodulation Performance -107 dBm Typ @ Cellular
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TQP4M3007
MLP-12
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Untitled
Abstract: No abstract text available
Text: i n FEATURES MODEL I • 2 0 - 6 0 0 MHz U s ■ High Isolation mm ■ +36 dBm 3rd Order Intercepts XFER PIN Diode Transfar Striteli ■ TTL Driver ■ SMA Connectors 2 .00 ± .03 .08 1 .836 — 1.42 j b - ~ Ti l J2 ji J2 Ü PART IDENTIFICATION / 1.50 1.336
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50XTTLT0
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Untitled
Abstract: No abstract text available
Text: • f l2 3 5 b 0 5 00^ 13117 5 0 3 S I E M E N S _ ■ PROFET BTS711 L1 Smart Four Channel Highside Power Switch Features • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection
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BTS711
A23Sb05
P-DSQ-20-9
BTS711L1
Q67060-S7006-A2
23SbO
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2sk2175
Abstract: No abstract text available
Text: 2SK2175 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • L ow on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator. DC-DC converter
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2SK2175
2sk2175
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BUZ 835
Abstract: No abstract text available
Text: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated BUZ 307 CO Type 800 V b 3A ^bs on 3 Í1 Package Ordering Code TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 7C = 35 °C
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O-218AA
C67078-S3100-A2
O-218AA
BUZ 835
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PS 307 5A
Abstract: No abstract text available
Text: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode V=I05-5$ • Avalanche-rated i Pin 1 Pin 2 G Type BUZ 307 Vds 800 V b 3A Pin 3 D S ^DS on Package Ordering Code 3 Si TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
C67078-S3100-A2
35b05
flE35bG5
PS 307 5A
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C67078-A1609-A3
Abstract: 0014fl3b kds 9a
Text: ÔÛD D • 88D fl23SbQS QQ14Ô34 1 m Z I E G 14 834 D BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage Vos » 5A Continuous drain current ¡0 Drain-source on-reslstance ^DS on = 1,5 £2 Description
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fl23sbqs
C67078-A1609-A3
C67078-A1609-A3
0014fl3b
kds 9a
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MG200H2CK1
Abstract: tf3s cm7200
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hj’E=200 Min. (Ic=200A)
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MG200H2CK1
MG200H2CK1
tf3s
cm7200
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Untitled
Abstract: No abstract text available
Text: HAT2020R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-439 I 10th. Edition Features • L ow on-resistance • C apable o f 4 V gate drive • Low drive current • H igh density m ounting Outline S O P -8 5 6 7 8 D D D D % 1 ,2 , 3
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HAT2020R
ADE-208-439
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