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    82S1 Search Results

    82S1 Result Highlights (3)

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    2SK4082-S17-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    ADC082S101CIMMX/NOPB Texas Instruments 2 Channel, 500 ksps to 1 Msps, 8-Bit A/D Converter 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    ADC082S101CIMM/NOPB Texas Instruments 2 Channel, 500 ksps to 1 Msps, 8-Bit A/D Converter 8-VSSOP -40 to 85 Visit Texas Instruments Buy
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    82S1 Price and Stock

    ABLIC Inc. S-82S1AAA-A8T2U

    BATTERY PROTECTION IC FOR 1 CELL
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    Maxim Integrated Products DS2482S-100-

    IC BRIDGE I2C TO 1-WIRE 8-SOIC
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    Texas Instruments ADC082S101CIMM-NOPB

    IC ADC 8BIT SAR 8VSSOP
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    Bourns Inc 3682S-1-502L

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    Bourns Inc 3682S-1-102L

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    82S1 Datasheets (279)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    82S10 Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    82S100 Signetics Mos and Bipolar ROM / PROM 1975 Scan PDF
    82S100 Signetics (82S101) Field Programmable Logic Array Scan PDF
    82S100B3A Unknown Field Programmable Logic Array Scan PDF
    82S100/B3A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    82S100/B3A Philips Semiconductors Field programmable logic array (16x48x8) Scan PDF
    82S100/B3A Signetics Field Programmable Logic Array Scan PDF
    82S100BXA Unknown Field Programmable Logic Array Scan PDF
    82S100/BXA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    82S100/BXA Philips Semiconductors Field programmable logic array (16x48x8) Scan PDF
    82S100/BXA Signetics Field Programmable Logic Array Scan PDF
    82S100BYA Unknown Field Programmable Logic Array Scan PDF
    82S100/BYA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    82S100/BYA Philips Semiconductors Field programmable logic array (16x48x8) Scan PDF
    82S100/BYA Signetics Field Programmable Logic Array Scan PDF
    82S101 Signetics Field Programmable Logic Array Scan PDF
    82S101 Signetics Mos and Bipolar ROM / PROM 1975 Scan PDF
    82S101/B3A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    82S101/B3A Philips Semiconductors Field programmable logic array (16x48x8) Scan PDF
    82S101/B3A Signetics Field Programmable Logic Array Scan PDF
    ...

    82S1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    82S137

    Abstract: 4 to 16 decoder for ttl circuit GDIP1-T18 bipolar PROM 1024X4 a2712 1024x4 prom
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 1024x4 82S137 FEATURES DESCRIPTION • Address access time: 70ns max • Input loading: -150µA max • On-chip address decoding • No separate fusing pins


    Original
    PDF 1024x4) 82S137 82S137 500ns 4 to 16 decoder for ttl circuit GDIP1-T18 bipolar PROM 1024X4 a2712 1024x4 prom

    82S147B

    Abstract: F0180 mux 8 to 1 timing
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding


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    PDF 512x8) 82S147B 82S147B 500ns F0180 mux 8 to 1 timing

    prom 256x4 bit

    Abstract: prom 82S126 82S126 82S129 82S129/BEA GDFP2-F16 GDIP1-T16 32 x 32 matrix
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126 82S129 1K-bit TTL bipolar PROM 256x4 • Random logic • Code conversion FEATURES • Address access time: 60ns max • Input loading: -150µA max • On-chip address decoding


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    PDF 82S126 82S129 256x4) 82S126 82S129 82S126: 82S129: 500ns prom 256x4 bit prom 82S126 82S129/BEA GDFP2-F16 GDIP1-T16 32 x 32 matrix

    82S185

    Abstract: 82S184 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185
    Text: FEATURES • Low power dissipation: SO^W/bit typ • Address a cce ss time: 82S184/185: 100ns max S 8 2 S 184/185: 150ns max • Input loading: 82S184/185: -100MA max 82S184/185: -150/iA max • On-chip address decoding • Output options: 82S184: Open collector


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    PDF 82S184-I 82S185-I 82S184 82S185 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185

    82S153

    Abstract: ic 91215 82S153-5 S9S8 82S153-2 77153 82S153/B2C
    Text: HARRIS HPL-77153/82S153 HPlJMHarris P ro g ram m a b le Logic Features • LOGIC PATHS TE STED TO ENSURE FU N C T IO N A L IT Y • FAST ACCESS IN P U T TO O U TP U T • PROG RAMM ABLE LOGIC C IRC UITS • R E D U C TIO N O F 1C IN V E N TO R IE S 40nsec M A X


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    PDF HPL-77153/82S153 40nsee 155mA 82S153 82S153 ic 91215 82S153-5 S9S8 82S153-2 77153 82S153/B2C

    77153

    Abstract: 60SC4 82S153
    Text: 33 HARRIS HPL-77153/82S153 H P C m H arris P r o g ra m m a b le L o g ic Features • L O G IC P A T H S T E S T E D T O E N S U R E F U N C T IO N A L IT Y • F A S T A C C ES S IN P U T T O O U T P U T • L O W IC C . 1 55 m A M A X


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    PDF HPL-77153/82S153 40nsec 77153 60SC4 82S153

    82S16

    Abstract: 82S17 N82S16F N82S17F S82S16F S82S17F
    Text: M AY 1982 BIPOLAR M E M O R Y DIVISION 256-BIT BIPOLAR RAM 256 x 1 DESCRIPTION The 82S16 and 82S17 are R ea d /W rite m em ory a rrays w hich fe a tu re e ith e r open c o lle c to r or 3-sta te o u tp u t o p tio n s fo r o p ­ tim iz a tio n o f w ord e xp a n sio n in bused


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    PDF 256-BIT 82S16 /82S17 82S16 82S17 N82S16F N82S17F S82S16F S82S17F

    signetics 82s100

    Abstract: 82S100 82S101 82S100/BXA Fuse-Programmable controllers Programmable Logic Array PBPT 40DIP6
    Text: Signetics 8 2 S 1 0 0 /8 2 S 1 0 1 Field Programmable Logic Array 16x48x8 Military Customer Specific Products DESCRIPTION The 82S100 (3-State) and 82S101 (OpenCollector) are bipolar, Fuse Program­ mable Logic Arrays (FPLAs). Each device utilizes the standard AND/OR invert archi­


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    PDF 82S100/82S101 16x48x8) 82S100 82S101 bb531Bb 0D01114 24-Lead 24-Lsid 28-Lead B00000 signetics 82s100 82S100 82S101 82S100/BXA Fuse-Programmable controllers Programmable Logic Array PBPT 40DIP6

    N82S147

    Abstract: S82S147F 82S147 S82S147 4096-BIT
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 4096-BIT BIPOLAR PROM 5 12x 8 82S147 (T.S.) DESCRIPTION FEATURES The 82S147 is fie ld -p ro g ra m m a b le , w h ich m eans th a t cu sto m p a tte rn s are im m e d i­ a te ly a va ila b le by fo llo w in g th e S ig n e tic s


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    PDF 4096-BIT 512x8) 82S147 82S147 N82S147 N82S147 S82S147 S82S147F S82S147

    M 82S181

    Abstract: 82S180 82S181 N82S181 S82S181
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


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    PDF 8192-BIT 1024x8) 82S180 /82S181 82S180 82S181 M 82S181 N82S181 S82S181

    N82S123F

    Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
    Text: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which


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    PDF N82S23/N82S123 82S23 82S123 N82S123F N82S123N N82S23F 82S123 programming N82S23N SIGNETICS prom signetics 82S123 n82s123

    82s185

    Abstract: No abstract text available
    Text: FEATURES • Low power dissipation: 50/xW/bit typ • Address access time: 82S184/185: 100ns max 82S184/185: 150ns max • Input loading: 82S184/185: -1 0 0 MA max 82S184/185: -150/xA max • On-chip address decoding • Output options: 82S184: Open collector


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    PDF 82S184 82S185

    Untitled

    Abstract: No abstract text available
    Text: 82S126A Signelics 82S 129A IK-Bit TTL B ip o la r P R O M Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­


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    PDF 82S126A 82S126A 82S129A S126A

    82S16

    Abstract: 82516 N82S16 82S17 N82S16F N82S17F S82S16F S82S17F 82S17 "pin compatible"
    Text: JANUARY 1983 BIPOLAR M EM O R Y DIVISION 256-BIT BIPOLAR RAM 256 X 1 DESCRIPTION T he 82S16 a n d 82S17 are R e a d /W rite m e m o ry a rra y s w h ic h fe a tu re e ith e r ope n c o lle c to r o r 3 -s ta te o u tp u t o p tio n s fo r o p ­ tim iz a tio n o f w o rd e x p a n s io n in b u s e d


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    PDF 256-BIT 82S16 /82S17 82S16 82S17 82516 N82S16 N82S16F N82S17F S82S16F S82S17F 82S17 "pin compatible"

    TAA 141

    Abstract: 82S140 141 PROM 82S141
    Text: BIPOLAR M E M O R Y DIVISION JAN UARY 1983 4096-BIT BIPOLAR PROM 5 1 2 x 8 82S140 (O .C.)/82S14i (T.S.) DESCRIPTION FEATURES T h e 82S 140 a n d 82S141 are fie ld p ro g ra m ­ m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s are im m e d ia te ly a v a ila b le by f o llo w in g th e


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    PDF 4096-BIT 512x8) 82S140 /82S14i 82S140 82S141 TAA 141 141 PROM

    CQCC2-N28

    Abstract: 82S181A 1024 x 4 prom GDIP1-T24
    Text: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 DESCRIPTION FEATURES The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I


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    PDF 82S181A 82S181A 500ns 711Qfi2b CQCC2-N28 1024 x 4 prom GDIP1-T24

    82S147B

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Military Bipolar Memory Products 4K-bit TTL bipolar PROM 5 1 2 x 8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max The 82S147B is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I


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    PDF 82S147B 82S147B 20-pin 300mil-wide) 82S147B/BRST 470ft 500ns

    82S102

    Abstract: 82S103 FUSE f7 470H P601 F-7112 82S1 signetics 82s102 82S103-I signetics 82s103
    Text: 82S102-I.N • 82S103-I,N DESCRIPTION FEATURES The 82S102 and 82S103 are Bipolar pro­ grammable AND/NAND gate arrays, con­ taining 9 gates sharing 16 common inputs. On-chip input buffers enable the user to individually program for each_gate either the True lm , Complement (lm), or Don’t


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    PDF 82S102 82S103 FUSE f7 470H P601 F-7112 82S1 signetics 82s102 82S103-I signetics 82s103

    AS-016

    Abstract: 82S147 82S147A f0035 AS016 33-OS
    Text: Product specification Philips Semiconductors Military Bipolar Memory Products 4K-bit TTL bipolar PROM 512 x 8 82SH7A FEATURES DESCRIPTION • Address access time: 75ns max The 82S147 and 82S147A are field-programmable, which means that custom patterns are immediately available by following the


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    PDF 82S147 82S147A w82S147A 500ns AS-016 f0035 AS016 33-OS

    82S191

    Abstract: saa 1097 PHILIPS 82S191A 62S191
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 16K-bit TTL bipolar PROM 2048 x 8 82S191, 82S191A FEATURES DESCRIPTION • Address access time: The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the


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    PDF 16K-bit 82S191, 82S191A 82S191 100ns -150nA 82S191Aare 500ns saa 1097 PHILIPS 62S191

    SIGNETICS* fusing procedure

    Abstract: 82s129 programming N82S129A BIPOLAR PROM PROGRAMMING SPECIFICATION N82S126A N82S126AN N82S129AA generic prom programming signetics Bipolar PROM programming 82S126
    Text: N 8 2 S126A 8 2 S129A i 1 K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­


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    PDF 82S126A 82S129A 82S129A 82S129Aof SIGNETICS* fusing procedure 82s129 programming N82S129A BIPOLAR PROM PROGRAMMING SPECIFICATION N82S126A N82S126AN N82S129AA generic prom programming signetics Bipolar PROM programming 82S126

    82S135

    Abstract: SIGNETICS* 82S135 N82S135N 1CE2 n82s135 I206
    Text: Philips Components-Signetics 82S135 Document No. 853-0032 ECN No. 96054 Date of Issue March 14,1989 Status Product Specification 2K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S135 is field programmable, which means that custom patterns are


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    PDF 82S135 82S135 SIGNETICS* 82S135 N82S135N 1CE2 n82s135 I206

    82s185

    Abstract: No abstract text available
    Text: Philips Components-Signetics Document No. 853-0131 ECN No. 86487 Date of Issue N ovem ber 11,1986 Status Product Specification 82S185 8K-bit TTL bipolar PROM Memory Products DESCRIPTION FEATURES The 82S185 is field programmable, which means that custom patterns are


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    PDF 82S185 82S185

    IC 82S123

    Abstract: N82S23N n82s123n
    Text: Philips C o m p o n e n ts -S ig n e tic s D o c u m e n t N o . 8 5 3 -0 1 54 ECN N o. 86487 Date o f Is s u e N ove m b e r 11, 1986 S ta tu s P roduct S pecification 82S23 82S123 256-bit TTL bipolar PROM M em ory P ro du cts PIN CONFIGURATIONS DESCRIPTION


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    PDF 82S23 82S123 256-bit 82S23: 750i2, IC 82S123 N82S23N n82s123n