diode 8255
Abstract: LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z
Text: Bay Linear Inspire the Linear Power B8250 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features The B-8250 line of zero bias Schottky detector diodes by Bay Linear have been engineered for use in small signal Pin<-20 dBm applications at frequencies below 2.0
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B8250
B-8250
diode 8255
LINEAR MARKING
8253/8254
MARKING e6 SOT26
8251 cross
c5 marking code sot-323
Diode BAY 80
sot-23-3 c6
MARKING C3 SOT-323
Diode c4z
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DS243x
Abstract: DS18xx DS2415 battery DS2413 AN74 DS2408 DS1425 DS1904 DS1921 DS2480B
Text: Maxim > App Notes > 1-Wire Devices UARTs Keywords: 1-Wire, OneWire, iButton, iButtons, serial port, serial communication, uart, 8253, 8250, 1wire Jun 26, 2009 APPLICATION NOTE 74 Reading and Writing 1-Wire® Devices Through Serial Interfaces Abstract: This application note presents the electrical aspect of the 1-Wire protocol for new and legacy
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DS2431:
DS2432:
DS2433:
DS2450:
DS2502:
DS2505:
DS2506:
DS2890:
DS28E04-100:
APP74,
DS243x
DS18xx
DS2415 battery
DS2413
AN74
DS2408
DS1425
DS1904
DS1921
DS2480B
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SMC C75
Abstract: 8255 program peripheral interface m266 serial port 8250 MPC2605 MPC8260 k233
Text: Integrated Communications Processors MPC8260 PowerQUICC II Processor Family MPC8260 BLOCK DIAGRAM The PowerQUICC II family of integrated 16 KB I - Cache communications processors delivers excellent integration of processing power for networking and communications peripherals, providing
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MPC8260
MPC8260
60x-to-PCI
MPC2605)
MPC8260FACT
SMC C75
8255 program peripheral interface
m266
serial port 8250
MPC2605
k233
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8255 program peripheral interface
Abstract: memory interface 8255 8264 RAM 8255 pci 8255 RAM Peripheral interface 8255 MPC2605 MPC8260 serial port 8250 8265 RAM
Text: Integrated Communications Processors MPC8260 PowerQUICC II Processor Family The PowerQUICC™ II family of integrated MPC8260 Block Diagram communications processors delivers excellent integration of processing power for 16 KB I-Cache networking and communications peripherals,
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MPC8260
60x-to-PCI
MPC8260FACT
8255 program peripheral interface
memory interface 8255
8264 RAM
8255 pci
8255 RAM
Peripheral interface 8255
MPC2605
serial port 8250
8265 RAM
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microprocessor 8255 application
Abstract: ic 8255 Peripheral interface 8255 multiplexing 8255 8255 program peripheral interface ic 8255A memory interface 8255 ic 8250 smc diodes motorola ic 8250 data sheet
Text: Freescale Semiconductor, Inc. Fact Sheet POWERQUICC II SOLUTIONS Freescale Semiconductor, Inc. MPC8260 POWERQUICC II PROCESSOR FAMILY The PowerQUICC II™ family of integrated communications processors delivers excellent integration of processing power for networking and communications peripherals, providing
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MPC8260
MPC8260FACT
microprocessor 8255 application
ic 8255
Peripheral interface 8255
multiplexing 8255
8255 program peripheral interface
ic 8255A
memory interface 8255
ic 8250
smc diodes motorola
ic 8250 data sheet
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D008
Abstract: GR-1089-CORE TISP8250 TISP8250D TISP8250DR TPP25011
Text: TISP8250 UNIDIRECTIONAL THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTORS TISP8250 Unidirectional P-Gate Protector Telecommunication System 30 A 10/1000 Protectors D Package Top View Ion-Implanted Breakdown Region - Precise and Stable Voltage G 1 8 A V(BO)
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TISP8250
TISP8250
GR-1089-CORE
TPP25011
e/PI0222
D008
GR-1089-CORE
TISP8250D
TISP8250DR
TPP25011
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Untitled
Abstract: No abstract text available
Text: PRODUCT RELEASE Mini-Circuits Releases High Frequency LTCC Based Bandpass Filters BFCN PRODUCT SERIES LTCC Based Design Mini-Circuits has designed and offered to the RF & Microwave market, Low Temperature Co-Fired Ceramic LTCC based components for over 10 years.
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BFCN-7200+
BFCN-7350+
BFCN-7500+
BFCN-7700+
BFCN-7900+
BFCN-8000+
BFCN-8350+
BFCN-8450+
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DIODE 76A
Abstract: 035H IRFPE30
Text: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703PbF
O-247AC
IRFPE30
DIODE 76A
035H
IRFPE30
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TPP25011
Abstract: GR-1089-CORE TISP8250D TISP8250DR-S
Text: oH S CO M PL IA NT TISP8250D *R UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR TISP8250D Overvoltage and Overcurrent Protector Telecommunication System 30 A 10/1000 Protector 8-SOIC Package Top View Ion-Implanted Breakdown Region - Precise and Stable Voltage
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TISP8250D
TISP8250D
GR-1089-CORE
TPP25011
GR-1089-CORE
TISP8250DR-S
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MPC8270
Abstract: MPC8275 MPC8280
Text: Integrated Communications Processors MPC8280 PowerQUICC II Processor Family MPC8280 SOLUTION OVERVIEW Join the Revolution 16 KB I-Cache Demand for greater performance and higher integration in telecommunications equipment is driving a revolution in communications processors.
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MPC8280
MPC8280
MPC8280FACT
MPC8270
MPC8275
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Untitled
Abstract: No abstract text available
Text: S CO M PL IA NT TISP8250D *R oH UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR TISP8250D Overvoltage and Overcurrent Protector Telecommunication System 30 A 10/1000 Protector 8-SOIC Package Top View Ion-Implanted Breakdown Region - Precise and Stable Voltage
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TISP8250D
GR-1089-CORE
TPP25011
SD886-2-25624116
12/04/TSP0410
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Untitled
Abstract: No abstract text available
Text: oH S CO M PL IA NT TISP8250D *R UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR TISP8250D Overvoltage and Overcurrent Protector Telecommunication System 30 A 10/1000 Protector 8-SOIC Package Top View Ion-Implanted Breakdown Region - Precise and Stable Voltage
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TISP8250D
GR-1089-CORE
TPP25011
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marking code diode R12
Abstract: bourns tisp GR-1089-CORE TISP8250D TISP8250DR TISP8250DR-S TPP25011 JESD51-2 "Functional replacement"
Text: H V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP8250D *R o UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR TISP8250D Overvoltage and Overcurrent Protector Telecommunication System 30 A 10/1000 Protector 8-SOIC Package Top View Ion-Implanted Breakdown Region
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TISP8250D
TISP8250D
GR-1089-CORE
12/04/TSP0410
marking code diode R12
bourns tisp
GR-1089-CORE
TISP8250DR
TISP8250DR-S
TPP25011
JESD51-2
"Functional replacement"
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Untitled
Abstract: No abstract text available
Text: LD83_24 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: OUTLINE DRAWING Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated
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smps 24v 10a
Abstract: DIODE 76A 24V 10A SMPS 035H IRFPE30 MJ6000
Text: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703PbF
O-247AC
smps 24v 10a
DIODE 76A
24V 10A SMPS
035H
IRFPE30
MJ6000
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Untitled
Abstract: No abstract text available
Text: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703PbF
O-247AC
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24V 10A SMPS
Abstract: DIODE 76A IRFP3703PbF 035H IRFPE30 SMPS 24V irfp3703
Text: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703PbF
O-247AC
24V 10A SMPS
DIODE 76A
IRFP3703PbF
035H
IRFPE30
SMPS 24V
irfp3703
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24V 10A SMPS
Abstract: IRFBL3703 DIODE 76A ISD76A
Text: PD - 93841 IRFBL3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification in High Power High Frequency DC/DC Converters VDSS RDS on max ID 30V 0.0025Ω 260A Benefits >1mm lower profile than D2Pak Same footprint as D2Pak Low Gate Impedance to Reduce Switching
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IRFBL3703
Juncti252-7105
24V 10A SMPS
IRFBL3703
DIODE 76A
ISD76A
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Untitled
Abstract: No abstract text available
Text: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5547-1.3 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1200FSM12-A000
DS5547-1
DS5547-2
1050g
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TRANSISTOR C 6090
Abstract: DIM1200FSS12-A000
Text: DIM1200FSS12-A000 Single Switch IGBT Module DS5834-1.1 September 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK)
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DIM1200FSS12-A000
DS5834-1
LN24178)
DIM1200FSS12-A000
TRANSISTOR C 6090
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24V 10A SMPS
Abstract: IRFP3703
Text: 2002-03-28 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-168-74 IRFP3703 HEXFET TO-247 PD - 93917 IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification
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IRFP3703
O-247
IRFP3703
O-247AC
Dissipatio252-7105
24V 10A SMPS
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1N4001 SMB
Abstract: 1N4007 SMB 1N4000 1n4004 1n4002 RS3B/BB US13
Text: BRIDGE RECTIFIERS & DIODES General Purpose Diodes Series 1N4000 1N5391 1N5400 S1 S2 S3 PX6A h AV H •[. 1.5 1 1.5 S ’■\ 50 1N4001 1N5391 1N5400 S1A S2A S3A PX6A01 100 1N4002 1N5392 1N5401 S1B S2B S3S PX6A02 :i.i 200 1N4003 1N5393 1N5402 S1D S2D S3D PX6A03
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1N4000
1N5391
1N5400
1N4001
PX6A01
1N4002
1N5392
1N5401
1N4001 SMB
1N4007 SMB
1N4000 1n4004 1n4002
RS3B/BB
US13
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C80Q
Abstract: No abstract text available
Text: B40C800DM THRU B380C800DM MINIATURE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 65 to 600 Volts Forward Current - 0.9 Ampere_ FEATURES _£L ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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B40C800DM
B380C800DM
MIL-STD-750,
C80Q
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES 1 W ATT Z E N E R DIODE/DO-41 C A SE 7 O PERATIN G AND STO RA G E T EM PERA T U R E -65°Cto +175°C _ f g : _ fft.tlEB.fe &&&&% >% •& Maximum Zener PART Dynamic Impedances Maximum Reverse Current Forward Voltage
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DIODE/DO-41
DO-201
DO-41
Q007L
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