DIM1200FSM12-A000
Abstract: No abstract text available
Text: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5547-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5547-3.0 March 2003
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DIM1200FSM12-A000
DS5547-2
DS5547-3
DIM1200FSM12-A000
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74188
Abstract: DIM1200NSM12-E000 IGBT full bridge 1200 28130
Text: DIM1200NSM12-E000 DIM1200NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5750-1.2 FEATURES PDS5750-2.0 June 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) *
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DIM1200NSM12-E000
PDS5750-1
PDS5750-2
74188
DIM1200NSM12-E000
IGBT full bridge 1200
28130
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DIM400DDM12-A000
Abstract: DS5532-3
Text: DIM400DDM12-A000 DIM400DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5532-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5532-3.0 March 2003
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DIM400DDM12-A000
DS5532-2
DS5532-3
3300Varantee
DIM400DDM12-A000
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4250A
Abstract: DIM2400NSM12-E000 Partial Discharge Measurements
Text: DIM2400NSM12-E000 DIM2400NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5758-1.0 FEATURES PDS5758-2.0 April 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ
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DIM2400NSM12-E000
PDS5758-1
PDS5758-2
4250A
DIM2400NSM12-E000
Partial Discharge Measurements
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DFM400NXM33-F000
Abstract: 3300V FRD
Text: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating
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DFM400NXM33-F000
DS5910-1
LN25214)
DFM400NXM33-F000
3300V FRD
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Untitled
Abstract: No abstract text available
Text: Prices as of April 16, 2014. Check Web site for most current prices. DL305 Family of Products DL305 system example with serial communications network and operator interface OPC/DDE Data Server on PC RS422 Business system C-more panel Industrial computer Book 1 14.1
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DL305
RS422
DL305
D3-05B-1
290mm
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DFM900FXM12-A000
Abstract: No abstract text available
Text: DFM900FXM12-A000 Fast Recovery Diode Module DS5479-1.3 November 2007 LN25316 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 900A 1800A Isolated Copper Base plate
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DFM900FXM12-A000
DS5479-1
LN25316)
DFM900FXM12-A000
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DFM600FXM18-A000
Abstract: 1050g
Text: DFM600FXM18-A000 DFM600FXM18-A000 Fast Recovery Diode Module DS5438-1.4 April 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM typ VF (max) IF (max) IFM 1800V 2.0V 600A 1200A ■ Isolated Base
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DFM600FXM18-A000
DS5438-1
DFM600FXM18-arantee
DFM600FXM18-A000
1050g
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Untitled
Abstract: No abstract text available
Text: Agilent 8901B Modulation Analyzer 150 kHz–1300 MHz and Agilent 11722A Sensor Module (100 kHz– 2600 MHz) Four Instruments In One Data Sheet • RF Power: ±0.02 dB instrumentation accuracy • RF Frequency: 10 Hz resolution • AM and FM: 1% accuracy
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8901B
1722A
5980-2699EN
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12v to 1000v inverters circuit diagrams
Abstract: DIM1200FSM17-A000
Text: DIM1200FSM17-A000 DIM1200FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5456-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5456-2.1 May 2002
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DIM1200FSM17-A000
DS5456-2
2400y
12v to 1000v inverters circuit diagrams
DIM1200FSM17-A000
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DIM800NSM33-A000
Abstract: No abstract text available
Text: DIM800NSM33-A000 DIM800NSM33-A000 Single Switch IGBT Module Replaces October 2001, version DS5486-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5486-3.0 May 2002
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DIM800NSM33-A000
DS5486-2
DS5486-3
DIM800NSM33-A000
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DIM800DDM17-A000
Abstract: DIM800DDM17
Text: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces May 2001, version DS5433-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-3.0 March 2002
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DIM800DDM17-A000
DS5433-2
DS5433-3
DIM800DDM17-A000
DIM800DDM17
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internal diagram of 7400 IC
Abstract: DIM1600FSM17-A000
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5455-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.1 May 2002
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DIM1600FSM17-A000
DS5455-2
2400y
internal diagram of 7400 IC
DIM1600FSM17-A000
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DIM400DDM12-A000
Abstract: No abstract text available
Text: DIM400DDM12-A000 DIM400DDM12-A000 Dual Switch IGBT Module Preliminary Information DS5532-1.2 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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DIM400DDM12-A000
DS5532-1
DIM400DDM12-A000
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dim800ddm12
Abstract: DIM800DDM12-A000
Text: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information DS5528-1.1 March 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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DIM800DDM12-A000
DS5528-1
DIM800DDM12-A000
dim800ddm12
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DFM900FXM12-A000
Abstract: No abstract text available
Text: DFM900FXM12-A000 DFM900FXM12-A000 Fast Recovery Diode Module DS5479-1.2 July 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1200V 1.9V 900A 1800A ■ Isolated Base
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DFM900FXM12-A000
DS5479-1
DFM900FXM12-A000
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DIM500GCM33-TS000
Abstract: DIM500GCM33-TS
Text: DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-2 DS6098-3 September 2014 LN31960 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)
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DIM500GCM33-TS000
DS6098-2
DS6098-3
LN31960)
65ames
DIM500GCM33-TS000
DIM500GCM33-TS
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DIM800DDM12-A000
Abstract: No abstract text available
Text: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information Replaces issue March 2002, version DS5528-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM800DDM12-A000
DS5528-1
DS5528-2
DIM800DDM12-A000
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DFM900FXM12-A000
Abstract: No abstract text available
Text: DFM900FXM12-A000 DFM900FXM12-A000 Fast Recovery Diode Module Preliminary Information DS5479-1.2 July 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1200V 1.9V
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DFM900FXM12-A000
DS5479-1
DFM900FXM12-A000
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DIODE i2t
Abstract: No abstract text available
Text: DIM800DCM17-A000 DIM800DCM17-A000 IGBT Chopper Module Preliminary Information DS5433-2.0 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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DIM800DCM17-A000
DS5433-2
DIM800DCM17-A000
DIODE i2t
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SI-1050G
Abstract: SI-1010G SI-1030G SI-1020G sanken si-1050g si-1020ga VK10k SI1010G SI1020 SI-10506
Text: E L E C T R IC A L C H A R A C T E R IS T IC S C h a ra c te ris tic At 25°C am bient, 1kHz, R z .= 8 ohms S I- 101OG SI-1020G SI-1030G SI-1050G 10W 20W 30W 50W 3 4 V o r + 17V 46V or + 2 3 V 54V or + 2 7 V 66V or + 3 3 V 4 5 V o r ± 22.5V 55V or + 2 5 V
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SI-1010G
SI-1020G
SI-1030G
SM050G
SI-1020G
SI-10306
SI-10506
SI-1010G
SI-1050G
sanken si-1050g
si-1020ga
VK10k
SI1010G
SI1020
SI-10506
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Untitled
Abstract: No abstract text available
Text: The Features You Need For Your Applications Improves Quality The HP 8902S minimizes measurement system’s high performance instruments perb accuracy: AM and FM, ±1% ; level ± 0 .0 2 dB ± 0.0 2 d B /1 0 dB; and carrier 10 Hz resolution. The HP 8902S can be assembled and running in
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8902S
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Untitled
Abstract: No abstract text available
Text: M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 D S 4 1 7 6 -1 .4 APPLICATIONS • Freewheel Diode. ■ A ntiparallel Diode. ■ Inverters. ■ C hoppers. March 1998 KEY PARAMETERS v RRM 3500V 3000A Jf AV
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DS4176
DSF21035SV
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
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SP06Q002-TZA
Abstract: Hitachi Scans-001 JIS-K5400
Text: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 8215811 ( 7LINE) FAX:(07) 8215815 FOR MESSRS : DATE : May.07.2004 CUSTOMER'S ACCEPTANCE SPECIFICATIONS SP06Q002-TZA CONTENTS No SHEET No.
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SP06Q002-TZA
7B64PS
SP06Q002-TZA-2
Hitachi Scans-001
JIS-K5400
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