Intel 8245
Abstract: UJDA-110 Intel 8244 8244 INTEL
Text: About Founded in 1976 - Hi-Tech Contractors n Privately Held n – Los Angeles, San Mateo, Austin, Houston, Testing Division Started in 1982 n Oldest & Largest Test Lab n 1997 Sales $25 Million n Testing Related Sales $18 Million n Labs Offer Global Representation
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Y2000
Intel 8245
UJDA-110
Intel 8244
8244 INTEL
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lenze d-31855 manual
Abstract: lenze EMZ8201BB manual LENZE 9300 drive manual lenze inverter manual EVF8201-E lenze inverter manual EVF8202-E LENZE 8200 vector parameters lenze EVF8202-E manual LENZE 8200 parameter list emz8201bb D-31855
Text: 490 826 Lenze Global Drive Frequency inverters 8200/9300 vector 0.37 … 90 kW Lenze Drive Systems GmbH, Postfach 10 13 52, D-31763 Hameln Site: Hans-Lenze-Straße 1, D-31855 Aerzen, Tel. +49 0 5154 82-0, Fax +49 (0) 5154 82-21 11 E-mail: Lenze@Lenze.de • Internet: http://www.Lenze.com
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D-31763
D-31855
lenze d-31855 manual
lenze EMZ8201BB manual
LENZE 9300 drive manual
lenze inverter manual EVF8201-E
lenze inverter manual EVF8202-E
LENZE 8200 vector parameters
lenze EVF8202-E manual
LENZE 8200 parameter list
emz8201bb
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BPV11F
Abstract: 035R
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times
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BPV11F
2002/95/EC
2002/96/EC
BPV11F
18-Jul-08
035R
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PDF
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BPV11
Abstract: phototransistor 600 nm
Text: BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPV11
2002/95/EC
2002/96/EC
BPV11
18-Jul-08
phototransistor 600 nm
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PDF
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BPV11F
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
08-Apr-05
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PDF
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BPV11F
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
08-Apr-05
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PDF
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BPV11
Abstract: No abstract text available
Text: BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPV11
2002/95/EC
2002/96/EC
BPV11
11-Mar-11
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PDF
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ic 8253
Abstract: IC AN 8249 BPV11
Text: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation.
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BPV11
BPV11
08-Apr-05
ic 8253
IC AN 8249
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PDF
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BPV11
Abstract: No abstract text available
Text: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation.
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BPV11
BPV11
2002/95/EC
2002/96/EC
08-Apr-05
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PDF
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BPV11F
Abstract: National 8250
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
2002/95/EC
2002/96/EC
18-Jul-08
National 8250
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PDF
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BPV11F
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times
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Original
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BPV11F
2002/95/EC
2002/96/EC
BPV11F
11-Mar-11
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PDF
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BPV11
Abstract: No abstract text available
Text: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation.
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Original
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BPV11
BPV11
2002/95/EC
2002/96/EC
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPV11
2002/95/EC
2002/96/EC
BPV11
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times
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BPV11F
BPV11F
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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35734UL
Abstract: 46C2084 23R7008 23R6998 46X2684 23R7263 TS3200 46X2685 46X2683 45E3081
Text: IBM Systems and Technology Data Sheet System Storage IBM System Storage TS3200 Tape Library Express Model Entry-level LTO tape library designed to provide reliable, high-capacity, high-performance tape backup ● Designed to support the newest generation of LTO with up to two
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TS3200
TSD03016-USEN-06
35734UL
46C2084
23R7008
23R6998
46X2684
23R7263
46X2685
46X2683
45E3081
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Untitled
Abstract: No abstract text available
Text: BPV11F www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times
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BPV11F
BPV11F
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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Original
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BPV11
2002/95/EC
2002/96/EC
BPV11
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPV11
2002/95/EC
2002/96/EC
BPV11
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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nec D 8243 C
Abstract: PS2581L1 PS2581L2 PS2581L2-E3 PS2581L2-E4 VDE0884
Text: DATA SHEET PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP Dual In-line Package .
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PS2581L1
PS2581L2
PS2581L1,
PS2581L2
nec D 8243 C
PS2581L2-E3
PS2581L2-E4
VDE0884
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PS2581L1
Abstract: PS2581L2 PS2581L2-E3 PS2581L2-E4 VDE0884
Text: DATA SHEET PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP Dual In-line Package .
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PS2581L1
PS2581L2
PS2581L1,
PS2581L2
E72422
PS2581L2-E3
PS2581L2-E4
VDE0884
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v945
Abstract: V943 272850 270929-003 80960SA 80960SB N80960SA N80960SB S80960SA S80960SB
Text: 80960SA/SB SPECIFICATION UPDATE Release Date: July, 1996 Order Number: 272850-001 The 80960SA/SB may contain design defects or errors known as errata. Characterized errata that may cause the 80960SA/SB’s behavior to deviate from published specifications are
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80960SA/SB
80960SA/SB
v945
V943
272850
270929-003
80960SA
80960SB
N80960SA
N80960SB
S80960SA
S80960SB
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8080 intel databook
Abstract: ARCHITECTURE OF 80286 Klamath working of 80286 82440FX Intel Pentium D 925
Text: E AP-827 APPLICATION NOTE 100 MHz GTL+ Layout Guidelines for the Pentium II Processor and Intel 440BX AGPset Order Number: 243735-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
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AP-827
440BX
8080 intel databook
ARCHITECTURE OF 80286
Klamath
working of 80286
82440FX
Intel Pentium D 925
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nec pc 2581 v
Abstract: nec pc 2581 NEC 2581 pc 2581 v
Text: DATA SHEET PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE −NEPOC 4-PIN PHOTOCOUPLER Series− DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP Dual In-line Package .
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PS2581L1
PS2581L2
PS2581L1,
PS2581L2
E72422
nec pc 2581 v
nec pc 2581
NEC 2581
pc 2581 v
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Intel 8245
Abstract: 87S181 63S881 AM27S181 82HM181 TBP28S86 M7581 RAYTHEON ROM Bipolar ROM 1K X 4 Intel 8244
Text: 1 0 2 4 X 82H M 181 8 1 9 2 Bit 8 HMOS ROM GENERAL DESCRIPTION • • • • • • • • • The 82HM181 Is a high speed 8,192 b it read-only memory (ROM) organized 1024 words by 8 bits. The device is fabricated using In te rsil’s SELOX HMOS technology, a
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OCR Scan
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82HM181
82HM181
Intel 8245
87S181
63S881
AM27S181
TBP28S86
M7581
RAYTHEON ROM
Bipolar ROM 1K X 4
Intel 8244
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