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    824 MOSFET Search Results

    824 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    824 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ADP5310READJ-EVALZ User Guide UG-824 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the ADP5310 Step-Down Regulator FEATURES GENERAL DESCRIPTION 700 nA ultralow quiescent current


    Original     		PDF ADP5310READJ-EVALZ UG-824 ADP5310 UG13028-0-4/15

    BTS 824 E

    Abstract: BTS 824 a diode zener ZL 27 siemens functional profet siemens functional description profet 824 mosfet 824 10 pins siemens Requirements for Power MOSFET connected in parallel diode 824
    Text: Target Datasheet BTS 824 Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating Voltage Vbb on Active channels On-state Resistance RON Nominal load current IL(ISO) Current limitation IL(SCr) Package P-DSO-20-10 (Power SO 20)


    Original     		PDF P-DSO-20-10 1999-Sep-01 BTS 824 E BTS 824 a diode zener ZL 27 siemens functional profet siemens functional description profet 824 mosfet 824 10 pins siemens Requirements for Power MOSFET connected in parallel diode 824

    SKY85703

    Abstract: SKY77758
    Text: New Products Spring 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 5 Smart Energy Solutions . . . . . . . . . . . . . . . . . . 7


    Original     		PDF BRO399-14B SKY85703 SKY77758

    Si7440DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7440DP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7440DP 0-to-10V 12-Aug-02

    NS4150

    Abstract: Si7440DP
    Text: SPICE Device Model Si7440DP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7440DP 24-May-04 NS4150

    shd225452

    Abstract: IRF52
    Text: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.07 Ohm, -34A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 œ Add an “S” to the end of the part number for S-100 screening, SHD225452S


    Original     		PDF SHD225452 IRF5210 S-100 SHD225452S SHDC225452 SHD225452 O-254 IRF52

    0.1 uf Ceramic Capacitors 104

    Abstract: RuGGed Chip filter capacitor 155 k 630 a
    Text: VJ Series RuGGed Multilayer Ceramic Chip Capacitors New RuGGed Capacitors for Power Supply Applications FEATURES • Rugged, surface-mountable, multilayer ceramic capacitors • At 120 Hz, ESR of 100-V-rated RuGGed chip is typically less than a quarter that of an aluminum electrolytic capacitor with the same capacity and


    Original     		PDF 00-V-rated VJ2225 VJ1812 01-Oct-04 VMN-PT9060-0410 0.1 uf Ceramic Capacitors 104 RuGGed Chip filter capacitor 155 k 630 a

    KHB4D0N80F

    Abstract: khb*4D0N80F2 KHB4D0N80F2
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB4D0N80P1/F1/F2 KHB4D0N80P1 KHB4D0N80F1 KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80F khb*4D0N80F2 KHB4D0N80F2

    rfp50n06 equivalent

    Abstract: BUZ71A equivalent buz11 equivalent BUZ71 equivalent IRF9540 equivalent RFP12N10L equivalent irf740 equivalent ICM755 IRF640 equivalent 555 timer for lm555cn
    Text: Intersil Timers, Oscillators, Rectifiers and MOSFETs Timers/Oscillators Mfr.Õs Type Max. Output Frequency Astable Description Package Type LM555CN Timer for Time Delays and Oscillator Applications 10 KHz (Typ.) +4.5 V to +18 V @ 15 mA 8 Lead PDIP ICM7555IBA


    Original     		PDF LM555CN ICM7555IBA ICM7555IPA ICM7556IPD ICM7555, ICM7242IPA 250AB IRF630 O-220AB RFP50N06 rfp50n06 equivalent BUZ71A equivalent buz11 equivalent BUZ71 equivalent IRF9540 equivalent RFP12N10L equivalent irf740 equivalent ICM755 IRF640 equivalent 555 timer for lm555cn

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are


    Original     		PDF GSM3406AS, OT-23 GSM3406ASJZF OT-23) Lane11

    Untitled

    Abstract: No abstract text available
    Text: 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4535, -40V/-6 -40V/-5 GSM4535SF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9101, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge.     These devices are particularly suited for low voltage power management, such as smart


    Original     		PDF GSM9101, -20V/-2 OT-23 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4637, P-Channel enhancement mode OSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4637, -40V/-6 -40V/-5 GSM4637SF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM9102B, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge.    These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM9102B, OT-23 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM2301A, -20V/-2 OT-23 Lane11

    MTO-3p

    Abstract: 824 mosfet 2SK2177
    Text: Power MOSFET V X -II series E-pack SMD N-Channel, Enhancement type TO-220 MTO-3P Electrical Characteristics Absolute Maximum Ratings Type No. Tch [°C] [V ] V gss Io Pt RostON) (max) [V ] CA] [W] [Q ] [pF] [pF] [nS] [nS] 7 4 140 220 13 17 35 40 70 2.3 400


    OCR Scan     		PDF O-220 2SK2177 O-220 STO-220 FTO-220 STO-220 MTO-3p 824 mosfet

    oni 350

    Abstract: No abstract text available
    Text: Power MOSFET r:C E-pack SMD V X -II series TO-220 ÿ U / " STO-220 (SMD) ITO-3P MTO-3P MTO-3L N-Channel. Enhancement type Electrical Characteristics Absolute Maximum Ratings toff (typ) V gss Id Pt (max) r c ] [V ] [V ] [A ] [W ] [O ] [pF] [pF] [ns] [ns]


    OCR Scan     		PDF O-220 STO-220 O-220 STO-220 FTO-220 oni 350

    2SK2177

    Abstract: No abstract text available
    Text: Power MOSFET msmmm E-pack SMD TO-220 N-Channel, Enhancement type Absolute Maximum Ratings Electrical Characteristics (max) C«, (typ) (typ) t«, (typ) (typ) [pF] [pF] [ns] [ns] R d S(ON) Type No. Tch V dss Vgss Id Pt re ] [V ] [V ] [A ] [W ] [Q ] totf 2SK2177


    OCR Scan     		PDF 2SK2177 O-220 O-220 STO-220 FTO-220

    Untitled

    Abstract: No abstract text available
    Text: Pow er MOSFET V/ h . ‘j E-pack SMD HVX-H series // TO-220 STO-220 (SMD) MTO-3P FTO-220 N-Channel, Enhancement type Absolute Maximum Ratings Type No. Tch V dss V gss Id Pt rc ] [V ] [V] [A ] [W ] 2SK2663 2664 2665 •s * h 2666 2667 - G * C rss ton toff


    OCR Scan     		PDF O-220 STO-220 FTO-220 2SK2663 O-220 STO-220 FTO-220

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET HVX- Il series E-pack SMD N-Channel, Enhancement type TO-220 FTO-220 Electrical Characteristics Absolute Maximum Ratings Pi (max) Ct. (typ) [A] [W ] [9 3 [pF] [pF] 1 10 50 14.0 4.7 230 3 630 5 16 3 3 50 30 4.7 4.7 630 16 40 40 630 16 40 R dsìo n )


    OCR Scan     		PDF O-220 FTO-220 O-220 STO-220 FTO-220

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET E-pack SMD HVX- II series TO-220 STO-220 (SMD) ITO-3P FTO-220 N-Channel, Enhancement type Absolute Maximum Ratings Type No. 2SK2663 2664 2665 2666 2667 2668 2669 2670 2671 2672 2673 2674 2675 2676 2677 2333 Electrical Characteristics R d s (on )


    OCR Scan     		PDF O-220 STO-220 FTO-220 T0220 STO-220 FTO-220 O-220

    KY 719

    Abstract: 122JK TB163TK TB143TK
    Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75


    OCR Scan     		PDF 2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 2SA1036K 2SA1037AK 2SA1037AKLN 2SA1455K RU101 KY 719 122JK TB163TK TB143TK

    3N163-64

    Abstract: MOSFET 3N 200
    Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch _ ^ mm « /« Iä W I# . C Q IO Q IC M \J CORPORATION 3N163/3N164 ABSOLUTE MAXIMUM RATINGS N o te l (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance


    OCR Scan     		PDF 3N163/3N164 3N163 -10mA, 3N163 3N164 -10mA 200ns 10Mfl 3N163-64 MOSFET 3N 200

    3N163

    Abstract: 3N163-64 3N164
    Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch 3N163/3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance High Gate Breakdown Fast Switching Low Capacitance Drain-Source or Drain-Gate Voltage


    OCR Scan     		PDF 3N163/3N164 to-72 3N163 3N164. 3N163. 3N164 -10mA 200ns 3N163 3N163-64 3N164