VSSX1284
Abstract: No abstract text available
Text: VSSX1284 Vishay Thin Film 25 Mil Pitch, IEEE 1284 Termination Network Resistor, Capacitor, Diode FEATURES • Lead Pb -Free available Product is pictured larger than actual size to show detail • Standard QSOP package (28 pins) - JEDEC mo-137AF • 17 terminating lines
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VSSX1284
mo-137AF
100mW
VSSX1284A
VSSX1284B
VSSX1284AT
05-May-05
VSSX1284
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VSSX1284
Abstract: 8237 diode 15KV VSSX1284AT VSSX1284B
Text: VSSX1284 Vishay Thin Film 25 Mil Pitch, IEEE 1284 Termination Network Resistor, Capacitor, Diode FEATURES • One sophisticated, integrated Thin Film technology solution • Up-graded IEEE 1284 parallel port termination, pull-up with Product is pictured larger than
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VSSX1284
28-pin
VSSX1284B
VSSX1284A
VSSX1284AT
07-Aug-02
VSSX1284
8237 diode
15KV
VSSX1284B
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Vishay Electro-Films
Abstract: electro-films 800w class d circuit diagram schematics dc-dc converter 50kW 100kW STR 61001 carbon resistor Dielectric Constant Silicon Nitride VISHAY MARKING SG "beryllium oxide" Foil Resistors
Text: VISHAY I N T E RT E CH N OLO G Y , I N C . INTERACTIVE data book THIN FILM PRODUCTS vishay Electro-films vsD-db0005-0404 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsD-db0005-0404
Vishay Electro-Films
electro-films
800w class d circuit diagram schematics
dc-dc converter 50kW 100kW
STR 61001
carbon resistor
Dielectric Constant Silicon Nitride
VISHAY MARKING SG
"beryllium oxide"
Foil Resistors
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MS146818B
Abstract: 440MX 82440MX W8237 82443MX CF9H interface 8254 with 8086 443BX 82C37 82C54
Text: 82443MX PCIset Processor Host Bus Support — Optimized for the Intel Pentium® II and mobile Celeron processors at 66 MHz — GTL+ Bus Driver Technology Integrated DRAM Support — 8 MB to 256 MB using 16-/64/128-Mb Technology — Standard and Registered
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82443MX
16-/64/128-Mb
82C37
GPIO11
GPIO22
GPIO12
GPIO23
GPIO13
GPIO24
GPIO14
MS146818B
440MX
82440MX
W8237
CF9H
interface 8254 with 8086
443BX
82C54
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128/AC 128 pnp transistor
Abstract: interfacing of 8237 with 8086 str 6628 440MX 443BX 82440MX 82443MX PCIset Electrical and Thermal Specification 8272A floppy disk controller block diagram CK100 pnp wcb valid bit
Text: 82443MX100 PCIset Datasheet § Processor Host Bus Support Optimized for the Intel mobile Pentium® II and the mobile Celeron processors at 100 MHz or 66 MHz GTL+ Bus Driver Technology § Integrated DRAM Support — 8 MB to 256 MB using 16-Mb,
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82443MX100
16-Mb,
64-Mb,
128-Mb
33-MHz
DMA/33"
82C37
82C59
GPIO11
GPIO22
128/AC 128 pnp transistor
interfacing of 8237 with 8086
str 6628
440MX
443BX
82440MX
82443MX PCIset Electrical and Thermal Specification
8272A floppy disk controller block diagram
CK100 pnp
wcb valid bit
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8237 DMA Controller
Abstract: 8237 DMA Controller data sheet pci to isa bridge intel 8272 INTEL 845 MOTHERBOARD CIRCUIT diagram 82C59 DMA Controller 8237 Intel 8237 dma controller 82371AB 82C37
Text: 82371AB PCI ISA IDE Xcelerator PIIX4 8.0 PCI/ISA Bridge Functional Description This section describes each of the major functions on the PIIX4 PCI-to-ISA Bridge including the memory and I/O address map, DMA controller, interrupt controller, timer/counter and X-Bus
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82371AB
8237 DMA Controller
8237 DMA Controller data sheet
pci to isa bridge
intel 8272
INTEL 845 MOTHERBOARD CIRCUIT diagram
82C59
DMA Controller 8237
Intel 8237 dma controller
82C37
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mar 722
Abstract: Vishay Military and Aerospace
Text: Introduction Vishay Foil Resistors Precision Bulk Metal Foil Fixed Resistors INTRODUCTION Bulk Metal® Foil technology was developed by Vishay in 1962 as a progression of the Company’s strain gage and stress analysis expertise. That technical development evolved into a Fortune 1000 company listed on the New York
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26-Mar-02
mar 722
Vishay Military and Aerospace
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BPW16N
Abstract: CQY 24
Text: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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BPW16N
D-74025
CQY 24
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rdc 19230
Abstract: tag 9035 PTC 2272 CS4281 SBR 2512 programmable divider circuit tc 8052 7492 PIN CONFIGURATION ICL 7211 data sheet CS4280-CM 9721 220
Text: Confidential Draft 3/7/00 CS4281 Programming Manual ft Revision 1.17w D ra 3/7/00 P.O. Box 17847, Austin, Texas 78760 512 445 7222 FAX: (512) 445 7581 http://www.cirrus.com Copyright Cirrus Logic, Inc. 2000 (All Rights Reserved) MAR’00 DS308PRM1 1
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CS4281
DS308PRM1
CS4281
rdc 19230
tag 9035
PTC 2272
SBR 2512
programmable divider circuit tc 8052
7492 PIN CONFIGURATION
ICL 7211 data sheet
CS4280-CM
9721 220
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CQY36
Abstract: BPW16N BPW16
Text: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable
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BPW16N
BPW16N
D-74025
15-Jul-96
CQY36
BPW16
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8239
Abstract: BPW16N CQY36N
Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
8239
CQY36N
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Untitled
Abstract: No abstract text available
Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
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CQY36N
Abstract: BPW16N ic 8236 8237 diode
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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BPW16N
BPW16N
CQY36N
D-74025
08-Mar-05
CQY36N
ic 8236
8237 diode
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BPW16N
Abstract: CQY36N
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
CQY36N
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CQY36
Abstract: No abstract text available
Text: BPW16N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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BPW16N
BPW16N
CQY36N
D-74025
26-Mar-04
CQY36
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ic 8237
Abstract: No abstract text available
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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BPW16N
BPW16N
CQY36N
2002/95/EC
08-Apr-05
ic 8237
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BPW16N
Abstract: CQY36N
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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BPW16N
BPW16N
CQY36N
08-Apr-05
CQY36N
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Untitled
Abstract: No abstract text available
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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BPW16N
BPW16N
CQY36N
200any
18-Jul-08
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FDS4465
Abstract: 8237 diode
Text: FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDS4465
FDS4465
8237 diode
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1N4010
Abstract: 8245 diode 1N3501
Text: Zero-TC Reference Diodes 49.6 6.5 6.5 6.5 6.5 6.2 6.2 6.2 6.2 6.2 Zzt <C2 IR uA) VR I Toi. I (V) [(+/-%) 0.005 160 0.001 12 0.0005! 12 0.001 12 0.001 12 ID O 0.04 0.0005 0.04 0.001 0.04 0.001 0.04 0.0005! 0.01 2 2 0,01 O 6.4 0.003 0.01 0.01 0.005 0.002 0.001
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DO-35
DO-710
1N4010
8245 diode
1N3501
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DCM7 DIODE
Abstract: HD13S motorola mc55 DIODE CH71 82440MX mc60 speed controller 440MX STR M 6523 DCM7 MCEE
Text: intei 82443MX100 PCIset Datasheet • ■ Processor Host Bus Support — Optimized for the Intel mobile Pentium® II and the mobile Celeron processors at 100 MHz or 66 MHz — GTL+ Bus Driver Technology Integrated DRAM Support — 8 MB to 256 MB using 16-Mb,
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16-Mb,
64-Mb,
128-Mb
33-MHz
DMA/33"
82C37
GPI021
82443MX100
GPI01
GPI02
DCM7 DIODE
HD13S
motorola mc55
DIODE CH71
82440MX
mc60 speed controller
440MX
STR M 6523
DCM7
MCEE
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Untitled
Abstract: No abstract text available
Text: in te i 82443MX PCIset + Processor Host Bus Support — System Tim er based on 82C54 — O ptim ized fo r the Intel — Pentium ® II and m obile Celeron processors at 66 MHz Real Tim e C lock w / 256 Bytes Battery-backed RAM — X-bus Support for SIO, KBCX
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82443MX
82C54
16-/64/128-M
PI021
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Untitled
Abstract: No abstract text available
Text: Introduction Vishay Foil Resistors Precision Bulk Metal Foil Fixed Resistors INTRODUCTION Bulk Metal® Foil technology was developed by Vishay in 1962 as a progression of the C om pany’s strain gage and stress analysis expertise. That technical development evolved into a Fortune 1000 company listed on the New York
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24-Apr-01
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24N50
Abstract: IXGH24N50BU1 IXGH24N60BU1
Text: DIXYS HiPerFAST IGBT with Diode Symbol V,CES IXGH 24N50BU1 IXGH 24N60BU1 24N50 600 V V Continuous ±20 V VGEM T ransient ±30 V C25 Tc = 25°C 48 A ^C90 T c = 90°C 24 A ®CM T c = 25°C, 1 ms 96 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, Rg = 22 Q Clamped inductive load, L = 100,uH
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24N50BU1
24N60BU1
24N50
24N60
-247A
24N50
IXGH24N50BU1
IXGH24N60BU1
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