750780
Abstract: No abstract text available
Text: HIGH-IP3 HIGH-IP3 TRIPLE-BALANCED TRIPLE-BALANCED LO = +17 dBm Click package to view outline drawing SURFACE MOUNT FREQUENCY RANGE MHz 133 1dB Comp. Pt. (dBm) ISOLATION (dB) CONVERSION LOSS (dB) Input IP3 (dBm) PIN OUT Package RF 820-850 865-898 1845-1920
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pi-898
750780
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Untitled
Abstract: No abstract text available
Text: HIGH-IP3 TRIPLE-BALANCED MIXERS LO = +17 dBm SURFACE MOUNT FREQUENCY RANGE MHz RF LO 133 IF 820-850 750-780 60-75 865-898 700-730 165-168 1845-1920 1705-1780 135-145 Max. 9.0 9.0 9.0 1dB Comp. Pt. (dBm) ISOLATION (dB) CONVERSION LOSS (dB) Input IP3 (dBm)
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Untitled
Abstract: No abstract text available
Text: 857019 835 MHz SAW Filter Applications General purpose wireless Wireless infrastructure Base Stations 3G, 4G, Multi-standard Repeaters Product Features Functional Block Diagram Top view Usable bandwidth 30 MHz Low loss Excellent power handling Single-ended operation
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820-850MHz)
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Untitled
Abstract: No abstract text available
Text: Click Package To View Outline Drawing HIGH-IP3 HIGH-IP3 TRIPLE-BALANCED TRIPLE-BALANCED LO = +17 dBm SURFACE MOUNT FREQUENCY RANGE MHz RF 820-850 865-898 1845-1920 LO 750-780 700-730 1705-1780 133 IF 60-75 165-168 135-145 Max. 9.0 9.0 9.0 1dB Comp. Pt. (dBm)
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XMEE6-20H1
Abstract: 820850
Text: Surface Mount High Dynamic Range Mixer 820-850 MHz Package Style 20 XMEE6-20H1 Key Features • • • * IP3 +37 dBm LO Power +17 dBm Solder Reflow to 240°C Guaranteed Specifications Frequency Range RF 820-850 LO 750-780 IF 70 MHz MHz MHz Conversion Loss dB
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XMEE6-20H1
XMEE6-20H1
820850
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Untitled
Abstract: No abstract text available
Text: 857019 835 MHz SAW Filter Applications General purpose wireless Wireless infrastructure Base Stations 3G, 4G, Multi-standard Repeaters Product Features Functional Block Diagram Top view Usable bandwidth 30 MHz Low loss Excellent power handling Single-ended operation
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820-850MHz)
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Untitled
Abstract: No abstract text available
Text: HIGH-IP3 TRIPLE-BALANCED LO = +17 dBm SURFACE MOUNT FREQUENCY RANGE MHz 133 1dB Comp. Pt. (dBm) ISOLATION (dB) CONVERSION LOSS (dB) Input IP3 (dBm) PIN OUT Package RF 820-850 865-898 1845-1920 LO 750-780 700-730 1705-1780 IF 60-75 165-168 135-145 Max. 9.0
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XMEE7-20H1
Abstract: No abstract text available
Text: Surface Mount High Dynamic Range Mixer 820-850 MHz Package Style 20 XMEE7-20H1 Key Features • • • IP3 +38 dBm LO Power +21 dBm Solder Reflow to 240°C Guaranteed Specifications Frequency Range RF 820-850 LO 750-780 IF 70 MHz MHz MHz Conversion Loss dB
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XMEE7-20H1
XMEE7-20H1
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diode in 5401
Abstract: TO-56 package laser diode
Text: COMMERCIAL LASERS Diode Lasers, Single-mode 50 to 200 mW, 810/830/852 nm 5400 Series Key Features • Up to 200 mW continuous wave CW output power • Various operating wavelength ranges within the 800 to 862 nm region • Diffraction-limited beam • TEM00 single transverse mode
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TEM00
498-JDSU
5378-JDSU
5400DIODELASER
diode in 5401
TO-56 package laser diode
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5432-H1
Abstract: TEM00 540016 5431-G1 5411-G1 JDSU laser diode
Text: COMMERCIAL LASERS 50 to 200 mW, 810/830/852 nm Single-mode Diode Lasers 5400 Series Key Features • Up to 200 mW continuous wave CW output power • Various operating wavelength ranges within the 800 to 862 nm region • Diffraction-limited beam • TEM00 single transverse mode
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TEM00
5400d
5400DIODELASER
5378-JDSU
5432-H1
540016
5431-G1
5411-G1
JDSU laser diode
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHW801 MHW851 Series The RF Line UHF Power Amplifiers . . . capable of w ide power range control as encountered in portable cellular radio applications 30 dB typical . | • • • • • • • High Efficiency Smallest Size in Industry
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MHW801
MHW851
MHW801-1
MHW851-1
MHW801-2
MHW851-2
MHW801-3
MHW851-3
MHW801-4
MHW851-4
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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PF0010
Abstract: No abstract text available
Text: blE D • 44^205 G0135T5 224 « H I T M HITACHI/ OPTO ELECTRON ICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 820-850 MHz ■ FEATURES • Include Input and Output Matching Circuit • Easy to Control Output Power • Superior to Stability at Load Mismatching
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D13STS
PF0010
PF0010
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MHW806A4
Abstract: MHW806A2 MHW806A1 MHW806-A3 power module si 3101 schematic diagram 806A1 806A2
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M HW 806A1 M H W 806A 2 M H W 806A 3 M H W 806A 4 The RF Line U H F P o w er A m p lifiers . . . designed for 12.5 Volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz.
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MHW806A1
MHW806A2
MHW806A3
MHW806A4
806A1
EB-107.
MHW806-A3
power module si 3101 schematic diagram
806A2
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Untitled
Abstract: No abstract text available
Text: HHTbSÜS Ü013b£2 GÔ2 « H I T 4 PF0020 H I T A C H I / OPTOELECTRONICS blE D M O S F E T P O W ER A M P LIFIER UHF Band 820-850 MHz • FEATURES • Include Input and Output Matching Circuit • Easy to Control Outout Power • Superior to Stability at Load Mismatching
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PF0020
PF0010.
20sec
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MHW806A4
Abstract: 806A3 MHW806A2 301H-02 motorola MHW Motorola UHF Power Amplifier Module MHW806-A3
Text: Order this data sheet by MHW806A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHW806A SERIES The RF Line U H F P ow er A m p lifie r M odule . . . designed for 12.5 Volt UHF power am plifier applications in industrial and com m ercial FM equipm ent operating from 806 to 950 MHz.
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MHW806A
MHW806A/D
MHW806A1
MHW806A2
MHW806A3
MHW806A4
MK145BP,
C51770
806A3
301H-02
motorola MHW
Motorola UHF Power Amplifier Module
MHW806-A3
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Untitled
Abstract: No abstract text available
Text: PA6787C 820-850 MHz. Cellular Amplifier MC/POIVAIÆCo/p. TypicalUrPerformance Curves - -55°C +25°C - A - +85°C See Short Form Chart and Mechanical Section for available outline drawings. Features: typical values • ■ ■ ■ High High High High Output P o w e r.
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PA6787C
Isol5/38
from-55
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MHW806A4
Abstract: MHW806A1 MHW806A2 MHW806A3 Motorola UHF Power Amplifier Module DOW 340 motorola rf power module
Text: Order this data sheet by MHW806A/D M OTOROLA S E M IC O N D U C T O R T ECH N ICAL DATA The RF Line U H F P o w e r A m p lifie r M o d u le . . . designed for 12.5 Volt UHF power am plifier applications in industrial and com m ercial FM equipm ent operating from 806 to 950 MHz.
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MHW806A/D
MHW806A1
MHW806A2
MHW806A3
MHW806A4
MK145BP,
MHW806A
C51770
Motorola UHF Power Amplifier Module
DOW 340
motorola rf power module
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SN72723
Abstract: SN72304 SN7401 sn55450b SN75326 SN72777 SN72440 SN52733/SN72733 SN75327 SN75107
Text: m GENERAL INFORMATION INDEXES Numerical • Functional • Cross Reference ORDERING INSTRUCTIONS AND MECHANICAL DATA FUTURE PRODUCTS OPERATIONAL AMPLIFIERS VOLTAGE REGULATORS VOLTAGE COMPARATORS VIDEO AMPLIFIERS AND SPECIAL FUNCTIONS LINE CIRCUITS MOS MEMORY INTERFACE CIRCUITS
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38510/MACH
make20
D012220
D011410
DO12520
D011520
SN72723
SN72304
SN7401
sn55450b
SN75326
SN72777
SN72440
SN52733/SN72733
SN75327
SN75107
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Untitled
Abstract: No abstract text available
Text: •TRIPLE-BALANCED MIXERS L O = + 17 d B m S urface M ount FREQUENCY RANGE MHz RF LO 820-850 865-898 1845-1920 IF 750-780 700-730 1705-1780 Max. 60-75 165-168 135-145 9.0 9.0 9.0 1dB Comp. Pt. (dBm) ISOLATION (dB) CONVERSION LOSS (dB) Input IP3 (dBm) PIN
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17uEj^
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Untitled
Abstract: No abstract text available
Text: INTEGRATED FREQUENCY SYNTHESIZERS Si!R!h'ACb:-Xti FREQUENCY RANGE STEP SIZE MHz (KHz) 101 -109 136-146 162-172 700 - 730 750 - 780 820-850 944 - 952 100 50 50 30 30 30 25 □C BIAS REQUIREMENTS Vcc1 & 2 (Volts) +5/+5 +5U5 +5/+5 +5/+5 +5/+5 +5/+5 +5/+5 OUTPUT
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KHz/100
LMX2320
LMX2325
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Untitled
Abstract: No abstract text available
Text: blE D • 44^205 G0135T5 224 « H I T M HITACHI/ OPTO ELECTRON ICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 820-850 MHz ■ FEATURES • Include Input and Output Matching Circuit • • Easy to Control Output Power Superior to Stability at Load Mismatching
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G0135T5
441b2G5
PF0010
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MHW803-3
Abstract: MHW803-2
Text: MOTOROLA SC XSTRS/R F 1 BE 0 | b 3 b ? 2 5 M OQaflbSM T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHW803 Series The RF Line UHF Power Am plifiers . . . capable of w ide power range control as encountered in portable cellular radio applications 30 dB typical .
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MHW803-1
MHW803-2
MHW803-3
MHW803-4
MHW803
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