PC97551
Abstract: lcd acer monitor circuit diagram ICS954310BGLF 39VF080 LCD INVERTER DIAGRAM acer PA1900-04 china DVD player lens circuit diagram Laptop AC adapter 19V 90w ALC833 samsung hdd f3
Text: TravelMate 8200 Service Guide Service guide files and updates are available on the ACER/CSD web. For more information, please refer to http://csd.acer.com.tw PRINTED IN TAIWAN II Revision History Please refer to the table below for the updates of Travelmate 8200 service guide.
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MM25060IL69
A03V7
T25V7
T23V7
A08V7
PC97551
lcd acer monitor circuit diagram
ICS954310BGLF
39VF080
LCD INVERTER DIAGRAM acer
PA1900-04
china DVD player lens circuit diagram
Laptop AC adapter 19V 90w
ALC833
samsung hdd f3
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Untitled
Abstract: No abstract text available
Text: SILICON CARBIDE “SUPER” JUNCTION TRANSISTORS OPERATING AT 500 °C Siddarth Sundaresan1, Ranbir Singh1, R. Wayne Johnson2 1 GeneSiC Semiconductor Inc. Dulles, VA 20166 2 Auburn University, Auburn, AL 36849 email:siddarth.sundaresan@genesicsemi.com, phone: 703 996-8200
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winpath
Abstract: Wintegra wintegra winpath AN005 M66EN REQ64 WinPATH 4
Text: Interfacing the PowerSpan IITM with the Wintegra WinpathTM 80A1010_AN005_05 November 4, 2009 6024 Silver Creek Valley Road San Jose, California 95138 Telephone: 408 284-8200 • FAX: (408) 284-3572 Printed in U.S.A. 2009 Integrated Device Technology, Inc.
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80A1010
winpath
Wintegra
wintegra winpath
AN005
M66EN
REQ64
WinPATH 4
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V 5SDD 54N4000 mW Doc. No. 5SYA1171-01 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability
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54N4000
5SYA1171-01
CH-5600
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CA91L750-100IL
Abstract: cdma fwt 7400 BOOK CA91L750 interface 740 IBM MPC7400 MPC8260 PC-100 PPC7400 917D
Text: PowerPro User Manual 80A5000_MA001_10 November 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER
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80A5000
CA91L750-100IL
cdma fwt
7400 BOOK
CA91L750
interface 740 IBM
MPC7400
MPC8260
PC-100
PPC7400
917D
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MP 130B
Abstract: IBM750FX TSI110 32G nand ppc 750fx MPC7447 MPC7448 MPC7457 PowerPC 750FX Tsi110167CL
Text: Tsi110 User Manual 80E5000_MA001_05 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER
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Tsi110TM
80E5000
Tsi110
MP 130B
IBM750FX
32G nand
ppc 750fx
MPC7447
MPC7448
MPC7457
PowerPC 750FX
Tsi110167CL
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Untitled
Abstract: No abstract text available
Text: Tsi384 Evaluation Board User Manual 60E1000_MA001_08 September 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.
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Tsi384â
60E1000
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tsi108
Abstract: Tsi109 tsi108-200cly compactpci 174 Tsi109TM Tundra Semiconductor tsi108 IVPR12 TSI108-200CL Tundra tsi108 Tsi109-200ILY
Text: Tsi108/Tsi109 User Manual 80B5000_MA001_08 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER
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Tsi108/Tsi109TM
80B5000
Tsi108/Tsi109
tsi108
Tsi109
tsi108-200cly
compactpci 174
Tsi109TM
Tundra Semiconductor tsi108
IVPR12
TSI108-200CL
Tundra tsi108
Tsi109-200ILY
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SOIC127P600
Abstract: TSSOP65P64-16 CAPC0402 MAX4372FEUK T FB0603
Text: Tsi381 Evaluation Board User Manual 60E2000_MA001_03 September 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.
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Tsi381â
60E2000
SOIC127P600
TSSOP65P64-16
CAPC0402
MAX4372FEUK T
FB0603
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winpath
Abstract: Wintegra WinPATH network diode t418 t428 motorola CA91L8200B CA91L8260B-100IE HSBGA 292 interface 740 IBM PowerPC 740 reference manual
Text: PowerSpan II User Manual 80A1010_MA001_09 November 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER
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80A1010
winpath
Wintegra
WinPATH network
diode t418
t428 motorola
CA91L8200B
CA91L8260B-100IE
HSBGA 292
interface 740 IBM
PowerPC 740 reference manual
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5SDD 54N4000
Abstract: D150 Rectifier A150 B150 C150 D150 VF150 VF25
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V mΩ Ω 5SDD 54N4000 Doc. No. 5SYA1171-00 Dec. 03 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability
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54N4000
5SYA1171-00
CH-5600
5SDD 54N4000
D150 Rectifier
A150
B150
C150
D150
VF150
VF25
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TCCH-80
Abstract: zo 107 GU1041 zo 107 MA
Text: Very Wideband RF Choke TCCH-80+ 50 to 8200 MHz 50Ω Maximum Ratings Features Operating Temperature Storage Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ.
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TCCH-80+
10GHz
GU1041
2002/95/EC)
TCCH-80
zo 107
GU1041
zo 107 MA
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uv phototransistor
Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200
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14-Apr-04
uv phototransistor
8602 rectifier
photodiode ge
uv photodiode, GaP
TSAL6200
ga09
80086
"photoconductive" 1015
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zo 107 MA
Abstract: TCCH-80 zo 107 GU1041 PL-147
Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Operating Temperature Storage Temperature Features • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ.
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TCCH-80+
10GHz
GU1041
2002/95/EC)
zo 107 MA
TCCH-80
zo 107
GU1041
PL-147
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hp 1458
Abstract: optocoupler 1458 hp 8200 diode HSSR-7110 HSSR-8060 HSSR-8200 HSSR-8400 HP 2000 optocoupler hp pin diode
Text: H 200-V/160 Ohm, 1 Form A, Small-Signal Solid State Relay Technical Data HSSR-8200 Features Applications Description • Compact Solid-State Bidirectional Signal Switch • Normally-Off Single-Pole Relay Function 1 Form A • Very High Output OffImpedance: 10,000
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00-V/160
HSSR-8200
200-Volt
160-Ohm
MILSTD-883
hp 1458
optocoupler 1458
hp 8200 diode
HSSR-7110
HSSR-8060
HSSR-8200
HSSR-8400
HP 2000 optocoupler
hp pin diode
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Untitled
Abstract: No abstract text available
Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Operating Temperature Features • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz
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TCCH-80+
10GHz
GU1041
2002/95/EC)
TB-272
PL-147)
M108294
ED-11032/4
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zo 107 MA
Abstract: zo 107 ZO 109
Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Operating Temperature Features • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz
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TCCH-80+
10GHz
GU1041
2002/95/EC)
zo 107 MA
zo 107
ZO 109
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zo 107
Abstract: zo 107 MA ZO 109 zo 109 ma
Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Features Operating Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz
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TCCH-80+
10GHz
GU1041
2002/95/EC)
zo 107
zo 107 MA
ZO 109
zo 109 ma
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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TCCH-80
Abstract: No abstract text available
Text: Very Wideband TCCH-80+ TCCH-80 RF Choke 50Ω 50 to 8200 MHz Maximum Ratings Features Operating Temperature Storage Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ.
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TCCH-80+
TCCH-80
10GHz
GU1041
2002/95/EC)
Electrica000
TCCH-80
TB-272
PL-147)
M102713
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Untitled
Abstract: No abstract text available
Text: Very Wideband TCCH-80+ TCCH-80 RF Choke 50Ω 50 to 8200 MHz Maximum Ratings Features Operating Temperature Storage Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ.
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TCCH-80+
TCCH-80
10GHz
GU1041
2002/95/EC)
TCCH-80
TB-272
PL-147)
M102713
ED-11032/4
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Untitled
Abstract: No abstract text available
Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Features Operating Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz
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TCCH-80+
10GHz
GU1041
2002/95/EC)
TB-272
PL-147)
M108294
ED-11032/4
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zo 107
Abstract: zo 107 MA ZO 109 zo 109 ma
Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Features Operating Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz
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TCCH-80+
10GHz
GU1041
2002/95/EC)
zo 107
zo 107 MA
ZO 109
zo 109 ma
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zo 107 MA
Abstract: zo 107 ZO 109
Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Operating Temperature Features • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz
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TCCH-80+
10GHz
GU1041
2002/95/EC)
biasin00
zo 107 MA
zo 107
ZO 109
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