MA3864
Abstract: No abstract text available
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA3864 AUGUST 1993 ADVANCE DATA DS3832-2.1 MA3864 RADIATION HARD 8192 x 8 BIT MASK-PROGRAMMABLE ROM The MA3864 64k Mask Programmable ROM is configured as 8192x8 bits and manufactured using CMOS-SOS high
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MA3864
DS3832-2
MA3864
8192x8
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8192X32
Abstract: SRAM timing
Text: d220002 8192X32, Mux 16, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 8192X32 SRAM is a high-performance, synchronous single-port, 8192-word by 32-bit memory designed to
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d220002
8192X32,
8192X32
8192-word
32-bit
55mm2
HS300-SS
99Q3P0
SRAM timing
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MATRA
Abstract: No abstract text available
Text: Te m ic HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum power consumption of only 743 mW.
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8192x8
MATRA
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AM27C49T
Abstract: No abstract text available
Text: a Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-ln replacement for Bipolar PROMs — JEDEC-approved pinout 5-Volt ±10% power supplies for both Commer
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Am27C49
536-Bit
8192x8)
9890A-6
09890-002B
AM27C49T
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X2864A
Abstract: x2864 X2864A-25 X2864A-35 X2864A-45 x2864ai RR-520
Text: tear Commercial X2864A fli 0, vflR i Industrial_ X2864AI_ 8192x8Blt 64K _ Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast W rite Cycle Times — 16-Byte Page W rite Operation — Byte or Page W rite Cycle: 5 ms Typical
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X2864A
X2864AI
8192x8
16-Byte
X2864A,
X2864AI
x2864
X2864A-25
X2864A-35
X2864A-45
RR-520
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eprom 2764
Abstract: ROM 2764 2732 eprom S2364B S2364C S2364I S2364M
Text: 65,536 Bit 8192x8 Static NMOS ROM •> GOULD Electronics S2364 Features □ □ □ □ □ □ □ □ □ Fast Access Time: S2364B-250ns (0°C to +70°C ) Maximum S2364C-200ns (0°C to +70°C ) Maiximum S2364!-250ns ( -4 0 ° C to +85°C ) Maximum S2364M -300ns (-5 5 ° C to + 125°C) Maximum
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8192x8)
S2364
S2364B-250ns
S2364C-200ns
S2364
-250ns
S2364M-300ns
28-Pin
eprom 2764
ROM 2764
2732 eprom
S2364B
S2364C
S2364I
S2364M
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Gould
Abstract: S68B364 S68C364 S68B3 68A76 S688364 S68I364 S68M364 S68364 68A764
Text: 65,536 Bit 8192x8 Static NMOS ROM •> GOULD Electronics S68364 Features General Description Fast Access Time: S68B364-250ns (0°C to 70°C) M aximum S68C364-200ns (0°C to +70°C ) Maximum S68l364-250ns ( -4 0 ° C to 85°C) Maximum S68M 364-300ns (~55°C to 125°C) Maximum
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8192x8)
S68364
S68B364-250ns
S68C364-200ns
S68l364-250ns
S68M364-300ns
S68364
Gould
S68B364
S68C364
S68B3
68A76
S688364
S68I364
S68M364
68A764
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ROM 2764
Abstract: eprom 2764 2764 rom 2764 eprom S6364 eprom circuit diagram 2764 block diagram
Text: 65,536 Bit 8192x8 Static CMOS ROM •> GOULD Electronics S6364 Features □ F a s t A c c e s s Time: 250ns M axim u m □ L o w S ta n d b y P o w e r 0.055m W M a x im u m □ F u lly S ta tic O p e ration □ S in g le + 5 V ± 10 % P o w e r S u p p ly
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8192x8)
S6364
250ns
055mW
S6364
ROM 2764
eprom 2764
2764 rom
2764 eprom
eprom circuit diagram
2764 block diagram
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Untitled
Abstract: No abstract text available
Text: 64K X24645 8192x8 Bit Advanced 2-Wire Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS —Active Read Current Less Than 1mA —Active Write Current Less Than 3mA —Standby Current Less Than 1|±A
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X24645
8192x8
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x2464s
Abstract: No abstract text available
Text: t o 64K X24645 u r 8192x8 Bit Advanced 2-Wire Serial E2PROM with BlockLock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS — Active Read Current Less Than 1mA — Active W rite Current Less Than 3mA — Standby Current Less Than 1|iA
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X24645
8192x8
x2464s
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x2864h
Abstract: X2864HD X2864HP-90
Text: JÜ fiAir 64K Ö T Commercial X2864H a io o v fto i* Industrial_ X2864HI_ 8192x8B lt _ Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times
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X2864H
X2864HI_
8192x8B
32-byte
32-PAD
X2864HD
X2864HP-90
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Untitled
Abstract: No abstract text available
Text: 31E D XI CO R INC m 0 Q Q 2 flbb 2 H ^ 1 7 4 3 S i i G W Commercial Industrial 64K X2864H X2864HI S o r V ,8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times
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X2864H
X2864HI
8192x8
32-Byte
X2864H
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EPROM 2764-25
Abstract: 2764-25 t4bu 2764c 2764-30 eprom
Text: FUJITSU M I C R O E L EC TR ON IC S S3E D 374*17 b E Q O M E b O T 000101020191000100010001020100010202 F U JIT S U ONÜgMEMOR 010001018002020102010201000102010201 MBM 2764-20 MBM 2764-25 MBM 2764-30 January 1984 Edition 4.0 M OS 8192x8BIT U V E R A S A B L E A N D E L E C T R IC A L L Y
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8192x8BIT
536-bit
28-pin
32-pad
tmsi50MS
320sec
16sec
LCC-32C
EPROM 2764-25
2764-25
t4bu
2764c
2764-30 eprom
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ITT taa 775
Abstract: 81C79A MB81C79A-35 81c79 mb81c79a-45 mb81c79
Text: 484823535348485323232301534823530189 FUJITSU CMOS 73728-BIT STATIC RANDOM ACCESS MEMORY MB81C79A-35 MB81C79A-45 Novenber 1987 Edition 2.0 72K-BIT 8192x9 HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB 81C79A is 8192 words x 9 bits static random access memory
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73728-BIT
MB81C79A-35
MB81C79A-45
72K-BIT
8192x9)
81C79A
B8K79A-45
32-PAD
LCC-32C-A02!
ITT taa 775
81c79
mb81c79a-45
mb81c79
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 23E D 37417b2 0007=143 b • T -M t-z v iz . F U JIT S U September 1988 Edition 1.0 72K-BIT 8192x9 HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu M B 81C 79A -W Is 8 1 9 2 w ords x 9 b its static random access m em ory
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37417b2
72K-BIT
8192x9)
32011S
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Untitled
Abstract: No abstract text available
Text: 64K Military X2864HM 8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 90 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation —Byte or Page Write Cycle: 3 ms Typical —Complete Memory Rewrite: 750 ms
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X2864HM
8192x8
--32-Byte
X2864H
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Untitled
Abstract: No abstract text available
Text: Yïpnn Preliminary Information Z8 Microcontroller Family Compatible X86C64 64K 8192x8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION * CONCURRENT READ WRITE " — Dual Plane Architecture Isolates Read/Write Functions Between Planes Allows Continuous Execution of Code
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X86C64
8192x8
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QQ054
Abstract: No abstract text available
Text: UK X24645 64K 8192x8 Bit Advanced 2-Wire Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS —Active Read Current Less Than 1mA —Active Write Current Less Than 3mA — Standby Current Less Than 1^A
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X24645
8192x8
D0G5417
QQ054
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Untitled
Abstract: No abstract text available
Text: A p p l ic a t io n N o t e s and D evelo pm en t S ystem A V A I L A B L E A N 62-64 • AN66 • AN68 • XK88 80C51 Microcontroller Family Compatible X88C64 SLIC E2 64K 8192x8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION SLIC SELF LOADING INTEGRATED CODE
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80C51
X88C64
8192x8
000405b
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w2464
Abstract: No abstract text available
Text: AUG 1 5 1992 W2464 Winbond 8K X 8 CMOS STATIC RAM DESCRIPTION FEATURES • Low Power C o n su m p tio n : A c t iv e The W2464 i s a H ig h Speed, Low Power CMOS S t a t i c RAM O rg a n iz e d a s 8192x8 : 250mW T y p . B it s and O p e ra te s on a S in g le 5 - V o lt S u p p ly . I t i s
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W2464
W2464
8192x8
250mW
B-1930
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Untitled
Abstract: No abstract text available
Text: JÜEQÜ A p p l ic a t io n N o t e s a n d D e v e l o p m e n t S y s t e m A V A I L A B L E AN62-64 • AN66 • AN68 • XK88 80C51 Microcontroller Family Compatible X88C64 SLIC E2 64K 8192x8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION SLIC SELF LOADING INTEGRATED CODE
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AN62-64
80C51
8192x8
X88C64
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AM27C49
Abstract: AM27C49T-55
Text: Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-in replacement for Bipolar PROMs — JEDEC-approved pinout S-Volt ±10% power supplies for both Commer
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Am27C49
536-Bit
8192x8)
AM27C49T-55
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Untitled
Abstract: No abstract text available
Text: G E C P L E S S E Y ma93m s I M I < \ [> I, ( I () K Radiation Hard 8192x8 Bit Static RAM s> (Advance Data) S10302ADS Issue 1.3 October 1990 Features Block Diagram • 1.5pm CMOS-SOS technology • Latch up free • Fast access time 45ns • Total dose 10s rad (Si)
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ma93m
8192x8
S10302ADS
MA9364
ma9364
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY S F M ADVANCE DATA ¡ C O N D U C T O R S DS3692-5.1 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5nm technology. The design uses a 6 transistor cell and has full static operation with
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DS3692-5
MA9264
MA9264
8192x8
37bfl522
0D23flfl7
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