Untitled
Abstract: No abstract text available
Text: SMT POWER TRANSFORMER Matched to Linear Technology Chipset DC/DC converter for use with Linear Technology LTC 1535 isolated RS485 transceiver Compact and cost-effective industrial design: EP7 format 500Vrms isolation Electrical Specifications @ 25°C — Operating Temperature -40°C to +125°C
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RS485
500Vrms
P1597NL
100kHz/100
P1597NLT)
P1597NL
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Q62702-P1654
Abstract: Q62702-P5503 94-2S bg94 SPL BG94 BG98
Text: Unmontierte Laserbarren, 50% Füllfaktor Un-mounted Laser Bars, 50% Fill-factor SPL BG81, SPL BG94, SPL BG98 Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Zuverlässiges kompressiv verspanntes InGa Al As/GaAs Material
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940nm/980nm
81-9S
94-2S
98-2S
Q62702-P1654
Q62702-P5503
94-2S
bg94
SPL BG94
BG98
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JIS-10K-50A
Abstract: JIS-30K-50A JIS-10K-40A JIS-10K-50A flange size JIS-20K-50A flange size JIS-20K-40A JIS-30K-40A JIS10K G5121 JPI-300LB-1
Text: SMALL FLANGE LEVEL TRANSMITTER FKY.4 DATA SHEET The FCX–A2 small flange level transmitter accurately measures liquid level and transmits a proportional 4 to 20mA signal. The transmitter utilizes a unique micromachined capacitance silicon sensor with state-of-the-art microprocessor technology to provide exceptional performance and functionality.
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7/16-20UNF
JIS-10K-50A
JIS-30K-50A
JIS-10K-40A
JIS-10K-50A flange size
JIS-20K-50A flange size
JIS-20K-40A
JIS-30K-40A
JIS10K
G5121
JPI-300LB-1
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JIS-10K-100A
Abstract: JIS-10K-80A JIS10K-80A JIS-20K-80A level sensor transmitter JIS-30K-80A flange jpi 150 DN100 PN16 zero elevation and zero suppression G5121
Text: LEVEL TRANSMITTER FKE.4 DATA SHEET The FCX–A2 level transmitter accurately measures liquid level and transmits a proportional 4 to 20mA signal. The transmitter utilizes a unique micromachined capacitance silicon sensor with state-of-the-art microprocessor technology to
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32kPa
500kPa
7/16-20UNF
depth10
JIS-10K-100A
JIS-10K-80A
JIS10K-80A
JIS-20K-80A
level sensor transmitter
JIS-30K-80A
flange jpi 150
DN100 PN16
zero elevation and zero suppression
G5121
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JIS-10K-50A
Abstract: JIS-10K-40A JIS-10K-50A flange size JIS-30K-50A JIS-20K-50A flange size JIS-20K-40A JIS-30K-40A material SCS14A JIS-20K-50A JIS-10
Text: SMALL FLANGE LEVEL TRANSMITTER FKY.4 DATA SHEET The FCX–A2 small flange level transmitter accurately measures liquid level and transmits a proportional 4 to 20mA signal. The transmitter utilizes a unique micromachined capacitance silicon sensor with state-of-the-art microprocessor technology to provide exceptional performance and functionality.
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ANSI/JPI-300LB-1
ANSI/JPI-300LB-2B
JIS-10K-50A
JIS-10K-40A
JIS-10K-50A flange size
JIS-30K-50A
JIS-20K-50A flange size
JIS-20K-40A
JIS-30K-40A
material SCS14A
JIS-20K-50A
JIS-10
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LT1990
Abstract: DC819 LT1995 LT1991 FOOTPRINTS con JP-26
Text: DEMO CIRCUIT 819 LT1990,QUICK LT1991,START AND GUIDE LT1995 LT1990, LT1991, and LT1995 Configurable-Gain Amplifiers DESCRIPTION Demonstration circuit 819 is a jumper definable evaluation platform featuring the LT1990, LT1991, and LT1995 Configurable-Gain Amplifiers.
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LT1990,
LT1991,
LT1995
LT1990
DC819
LT1995
LT1991
FOOTPRINTS con
JP-26
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PIC16F818
Abstract: PIC16F819 interrupt-on-change
Text: PIC16F818/819 PIC16F818/819 Rev. B0 Silicon Errata Sheet The PIC16F818/819 Rev. B0 parts you have received conform functionally to the Device Data Sheet DS39598E , except for the anomalies described below. All of the issues listed here will be addressed in future
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PIC16F818/819
PIC16F818/819
DS39598E)
PIC16F818
PIC16F819
DS80212C-page
PIC16F818
PIC16F819
interrupt-on-change
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PWM Inverter using PIC Microcontroller
Abstract: PIC18F818 PIC16F818 dspic33 example codes i2c pic16f818-i pic16f819 tutorial
Text: PIC16F818/819 18/20-Pin Enhanced Flash Microcontrollers with nanoWatt Technology Low-Power Features: Pin Diagram • Power-Managed modes: - Primary Run: XT, RC oscillator, 87 A, 1 MHz, 2V - INTRC: 7 A, 31.25 kHz, 2V - Sleep: 0.2 A, 2V • Timer1 oscillator: 1.8 A, 32 kHz, 2V
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PIC16F818/819
18/20-Pin
18-Pin
mode78-366
DS39598F-page
PWM Inverter using PIC Microcontroller
PIC18F818
PIC16F818
dspic33 example codes i2c
pic16f818-i
pic16f819 tutorial
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MCM63Z737
Abstract: MCM63Z737TQ10 MCM63Z819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Flow–Through ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z737/D MCM63Z737 MCM63Z819 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround. The ZBT RAM allows 100% use of bus cycles during
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MCM63Z737/D
MCM63Z737
MCM63Z819
MCM63Z737DMCM63Z819
MCM63Z737
MCM63Z737TQ10
MCM63Z819
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capacitor date codes
Abstract: SSPcon pic16f818 spi PIC16F818 PIC16F819 PIC16F819* SLEEP INSTRUCTION
Text: PIC16F818/819 PIC16F818/819 Rev. A4 Silicon Errata Sheet The PIC16F818/819 Rev. A4 parts you have received conform functionally to the Device Data Sheet DS39598E , except for the anomalies described below. Microchip intends to address all issues listed here in
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PIC16F818/819
PIC16F818/819
DS39598E)
PIC16F818
PIC16F819
DS80159F-page
capacitor date codes
SSPcon
pic16f818 spi
PIC16F818
PIC16F819
PIC16F819* SLEEP INSTRUCTION
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Flow–Through ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z737/D MCM63Z737 MCM63Z819 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround. The ZBT RAM allows 100% use of bus cycles during
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MCM63Z737/D
MCM63Z737
MCM63Z819
MCM63Z737DMCM63Z819
MCM63Z737/D
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kxud9
Abstract: KXUD9-2050
Text: KXUD9 Series Accelerometers and Inclinometers FEATURES MARKETS APPLICATIONS Ultra-small Package - 3x3x0.9mm LGA Digital SPI/I2C Output User-programmable g-Range User-programmable Low Pass Filter Ultra-low Power Consumption Cell Phones and Handheld PDAs \\
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KXUD9-1026
KXUD9-2050
kxud9
KXUD9-2050
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KXP84
Abstract: KXP84-2050
Text: KXP84 Series Accelerometers and Inclinometers FEATURES MARKETS APPLICATIONS Small Package - 5x5x1.2mm DFN Hard Disk Drives/Laptops I2C/SPI Interface Free-fall Detection Free-fall Interrupt Output Cell Phones and Handheld PDAs High-g Motion Interrupt Output
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KXP84
KXP84-1050
KXP84-2050
KXP84-2050
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Untitled
Abstract: No abstract text available
Text: KXSD9 Series Accelerometers and Inclinometers FEATURES MARKETS APPLICATIONS Ultra-Small Package - 3x3x0.9mm LGA Digital SPI/I2C Output Cell Phones and Handheld PDAs \\ Gesture Recognition and User Interface Function User-programmable g-Range Game Controllers & Computer Peripherals
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KXSD9-1026
KXSD9-2050
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KXSD9-2050
Abstract: KXSD9-1026 Kionix KXSD9 SPI timing diagram inclinometer sensor with I2C interface KXSD9 shock sensor SPI inclination sensor SPI
Text: KXSD9 Series Accelerometers and Inclinometers FEATURES MARKETS APPLICATIONS Ultra-Small Package - 3x3x0.9mm LGA Digital SPI/I2C Output Cell Phones and Handheld PDAs \\ Gesture Recognition and User Interface Function User-programmable g-Range Game Controllers & Computer Peripherals
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KXSD9-1026
KXSD9-2050
KXSD9-2050
KXSD9-1026
Kionix KXSD9
SPI timing diagram
inclinometer sensor with I2C interface
KXSD9
shock sensor SPI
inclination sensor SPI
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APT1201R6BVR
Abstract: BAT 545
Text: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
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APT1201R6BVR
O-247
O-247
APT1201R6BVR
BAT 545
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APT10M25BVR
Abstract: 43RG
Text: APT10M25BVR 75A 0.025Ω 100V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
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APT10M25BVR
O-247
O-247
MIL-STD-750
O-247AD
APT10M25BVR
43RG
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MCM63Z737
Abstract: MCM63Z737TQ10 MCM63Z819
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. 128K x 36 and 256K x 18 Bit Flow–Through ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z737/D MCM63Z737 MCM63Z819 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide
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MCM63Z737/D
MCM63Z737
MCM63Z819
MCM63Z737DMCM63Z819
MCM63Z737
MCM63Z737TQ10
MCM63Z819
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APT20M45B
Abstract: APT20M45BVR Diode 224
Text: APT20M45BVR G 200V, 56A, 0.045Ω APT20M45BVR(G) POWER MOS V POWER MOS V® is a new generation of high voltage N-Channel enhancement TO mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves
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APT20M45BVR
O-247
APT20M45B
Diode 224
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APT20M38BVFR
Abstract: No abstract text available
Text: APT20M38BVFR 67A 0.038Ω 200V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT20M38BVFR
O-247
O-247
APT20M38BVFR
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R7525
Abstract: APT10M19BVFR
Text: APT10M19BVFR 75A 0.019Ω 100V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT10M19BVFR
O-247
O-247
MIL-STD-750
R7525
APT10M19BVFR
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APT1001RBVFR
Abstract: No abstract text available
Text: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT1001RBVFR
O-247
O-247
APT1001RBVFR
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PDF
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APT10M25BVFR
Abstract: No abstract text available
Text: APT10M25BVFR 75A 0.025Ω 100V POWER MOS V FREDFET Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT10M25BVFR
O-247
O-247
APT10M25BVFR
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TO-22F
Abstract: 824 mosfet
Text: IRLS610A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 200 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS= 200V
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OCR Scan
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IRLS610A
TO-22F
824 mosfet
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PDF
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