GS816118BT-150V
Abstract: GS816118BT-200V GS816118BT-250V
Text: Preliminary 8161xxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect (SCD) operation
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Original
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PDF
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GS8161xxB
100-Pin
165-Bump
100-lead
8161xx-xxxV
GS816118BT-150V
GS816118BT-200V
GS816118BT-250V
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Untitled
Abstract: No abstract text available
Text: 8161xxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation
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Original
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PDF
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GS8161xxB
100-Pin
165-Bump
8161xx-xxxV
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GS816118B
Abstract: GS816118BT-150 GS816118BT-200 GS816118BT-250 GS816136B
Text: Preliminary 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation
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Original
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PDF
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GS816118B
/GS816132B
/GS816136B
100-Pin
165-Bump
100-lead
GS816118BT-150
GS816118BT-200
GS816118BT-250
GS816136B
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AN103
Abstract: AN107 AN95 X84129 X84161 X84641
Text: APPLICATION NOTE A V A I L A B L E AN95 • AN103 • AN107 MPS EEPROM X84161/641/129 µ Port Saver EEPROM 16K/64K/128K FEATURES DESCRIPTION • Up to 10MHz data transfer rate • 25ns Read Access Time • Direct Interface to Microprocessors and Microcontrollers
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Original
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PDF
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AN103
AN107
X84161/641/129
16K/64K/128K
10MHz
--32-Byte
AN103
AN107
AN95
X84129
X84161
X84641
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE A V A I L A B L E AN95 • AN103 • AN107 MPS EEPROM X84161/641/129 16K/64K/128K µPort Saver EEPROM FEATURES DESCRIPTION • Up to 10MHz data transfer rate • 25ns Read Access Time • Direct Interface to Microprocessors and Microcontrollers
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Original
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PDF
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AN103
AN107
16K/64K/128K
X84161/641/129
10MHz
--32-Byte
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Untitled
Abstract: No abstract text available
Text: 8161xxD GT/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply
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Original
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PDF
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GS8161xxD
100-Pin
165-Bump
addresse35
8161xxD
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Untitled
Abstract: No abstract text available
Text: GS816118B T/D /GS816132B(D)/GS816136B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect (SCD) operation
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Original
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PDF
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GS816118B
/GS816132B
/GS816136B
100-Pin
165-Bump
100-lead
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Untitled
Abstract: No abstract text available
Text: 8161xxD GT/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply
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Original
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PDF
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GS8161xxD
100-Pin
165-Bump
GS161xxD
8161xxD
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GS816118B
Abstract: GS816118BT-150 GS816118BT-200 GS816118BT-250 GS816136B
Text: GS816118B T/D /GS816132B(D)/GS816136B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect (SCD) operation
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Original
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PDF
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GS816118B
/GS816132B
/GS816136B
100-Pin
165-Bump
100-lead
165-bes
GS816118BT-150
GS816118BT-200
GS816118BT-250
GS816136B
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE A V A I L A B L E AN95 • AN103 • AN107 MPS EEPROM X84161/641 16K/64K µPort Saver EEPROM DESCRIPTION • Up to 10MHz data transfer rate • 25ns Read Access Time • Direct interface to microprocessors and microcontrollers —Eliminates I/O port requirements
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Original
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PDF
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AN103
AN107
16K/64K
X84161/641
10MHz
--32-byte
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GS816118B
Abstract: GS816118BT-150 GS816118BT-200 GS816118BT-250 GS816136B GS816118BD-200I 8161xxb GS816118BD-200 GS816136BGT-200
Text: GS816118B T/D /GS816132B(D)/GS816136B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect (SCD) operation
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Original
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PDF
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GS816118B
/GS816132B
/GS816136B
100-Pin
165-Bump
100-lead
165-b
GS816118BT-150
GS816118BT-200
GS816118BT-250
GS816136B
GS816118BD-200I
8161xxb
GS816118BD-200
GS816136BGT-200
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GS816118B
Abstract: GS816118BT-150 GS816118BT-200 GS816118BT-250 GS816136B
Text: GS816118B T/D /GS816132B(D)/GS816136B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect (SCD) operation
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Original
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PDF
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GS816118B
/GS816132B
/GS816136B
100-Pin
165-Bump
100-lead
165-bes
GS816118BT-150
GS816118BT-200
GS816118BT-250
GS816136B
|
Untitled
Abstract: No abstract text available
Text: GS816118D GT/D /GS816132D(D)/GS816136D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline
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Original
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PDF
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GS816118D
/GS816132D
/GS816136D
100-Pin
165-Bump
8161xxD
|
Untitled
Abstract: No abstract text available
Text: Preliminary GS816118B T/D /GS816132B(D)/GS816136B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect (SCD) operation
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Original
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PDF
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GS816118B
/GS816132B
/GS816136B
100-Pin
165-Bump
100-lead
|
|
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GS816118CD-250
Abstract: GS816118CD-300 GS816118CD-333
Text: Preliminary GS816118/36CD-333/300/250 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 165-Bump BGA Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply
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Original
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PDF
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GS816118/36CD-333/300/250
165-Bump
GS816118/36CD
368-bit
8161xxC
GS816118CD-250
GS816118CD-300
GS816118CD-333
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35-AG
Abstract: GS816118BGT-150I
Text: GS816118B T/D /GS816132B(D)/GS816136B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect (SCD) operation
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Original
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PDF
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GS816118B
/GS816132B
/GS816136B
100-Pin
165-Bump
100-lead
35-AG
GS816118BGT-150I
|
Untitled
Abstract: No abstract text available
Text: 8161xxD GT/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply
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Original
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PDF
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GS8161xxD
100-Pin
165-Bump
8161xxD
|
Untitled
Abstract: No abstract text available
Text: 8161xxB T/D -xxxV 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect (SCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply
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Original
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PDF
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GS8161xxB
100-lead
165-bump
8161xx-xxxV
|
Untitled
Abstract: No abstract text available
Text: GS816118D GT/D /GS816132D(D)/GS816136D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline
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Original
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PDF
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GS816118D
/GS816132D
/GS816136D
100-Pin
165-Bump
8161xxD
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X84129
Abstract: X84161 X84641 T0A marking 1/tda 7008
Text: ICmic TM This X84161/641/129 device has been acquired by IC MICROSYSTEMS from Xicor, Inc. IC MICROSYSTEMS MPSTM EEPROM X84161/641/129 16K/64K/128K µPort Saver EEPROM FEATURES DESCRIPTION •Up to 10MHz data transfer rate •25ns Read Access Time •Direct Interface to Microprocessors and
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Original
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PDF
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X84161/641/129
X84161/641/129
16K/64K/128K
10MHz
--32-Byte
X84129
X84161
X84641
T0A marking
1/tda 7008
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GS816118BT-150V
Abstract: GS816118BT-200V GS816118BT-250V
Text: Preliminary 8161xxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect (SCD) operation
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Original
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PDF
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GS8161xxB
100-Pin
165-Bump
100-lead
8161xx-xxxV
GS816118BT-150V
GS816118BT-200V
GS816118BT-250V
|
Untitled
Abstract: No abstract text available
Text: im A p p l ic a t io n N o t e A V A I L A B L E AN95 • AN103 • AN107 X84161/641/129 16K/64K/128K MPS EEPROM |jPort Saver EEPROM FEATURES DESCRIPTION • Up to 10MHz data transfer rate • 25ns Read Access Time • Direct Interface to Microprocessors and
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OCR Scan
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PDF
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AN103
AN107
X84161/641/129
|
Untitled
Abstract: No abstract text available
Text: A pplication N ote AVAILABLE im AN95 • AN103 • AN107 X84161/641/129 16K/64K/128K MPS EEPROM liPort Saver EEPROM FEATURES DESCRIPTION • Up to 10MHz data transfer rate • 25ns Read Access Time • Direct Interface to Microprocessors and Microcontrollers
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OCR Scan
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PDF
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AN103
AN107
16K/64K/128K
X84161/641/129
10MHz
32-Byte
|
Untitled
Abstract: No abstract text available
Text: A p p l ic a t io n N o t e X A V A I L A B L E X I C OR AN95 • AN103 • AN107 X84161 /641/129 liPort Saver EEPROM 1 6 K /6 4 K /1 2 8 K M PS E E P R O M FEATURES DESCRIPTION • Up to 10MHz data transfer rate • 25ns Read Access Time • Direct Interface to Microprocessors and
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OCR Scan
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PDF
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AN103
AN107
X84161
10MHz
32-Byte
X84129
14-Lead
28-Lead
8161XX
X84641Z
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