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    8128 STATIC RAM Search Results

    8128 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    8128 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic CD40106

    Abstract: cd40106 application notes ten segment display 74HC 74HCT IC family spec 74HC14 oscillator application diagram 74C14 CD40106 PIN OUT TIMEX PT 74hc logic family spec AN-376
    Text: National Semiconductor Application Note 376 Larry Wakeman October 1984 By adopting certain techniques in the design of your CMOS-based logic system you can effect dramatic reductions in the transitional power these zero-quiescent-current devices consume when switching


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    PDF MM54HC ic CD40106 cd40106 application notes ten segment display 74HC 74HCT IC family spec 74HC14 oscillator application diagram 74C14 CD40106 PIN OUT TIMEX PT 74hc logic family spec AN-376

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


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    PDF GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116

    125OC

    Abstract: CI 4026 power-55mW msm8128sxlmb
    Text: 128K x 8 SRAM MSM8128X - 020/25/35 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 4.3 : November 1998 131,072 x 8 CMOS High Speed Static RAM Description The MSM8128X is a 1Mbit monolithic SRAM


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    PDF MSM8128X MIL-STD-883 MIL-STD-883 125OC CI 4026 power-55mW msm8128sxlmb

    CI 4026

    Abstract: MSM8128SXLMB 125OC
    Text: 128K x 8 SRAM MSM8128X - 020/25/35 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.3 : November 1998 131,072 x 8 CMOS High Speed Static RAM Description The MSM8128X is a 1Mbit monolithic SRAM


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    PDF MSM8128X MIL-STD-883 MIL-STD-883 CI 4026 MSM8128SXLMB 125OC

    HM62V8128FP-12

    Abstract: HM62V8128FP-15 HM62V8128LFP-12 HM62V8128LP-12 HM62V8128LP-15 HM62V8128P-12 HM62V8128P-15 TTC-02 Hitachi Scans-001
    Text: HM62V8128 Series Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Description Ordering Information The H itachi H M 62V 8128 is a CM O S static RAM organized 128 kword X 8 bit. It realizes h ig h er d e n sity , h ig h er p erform an ce and lo w


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    PDF HM62V8128 131072-Word 525-mil 460-mil 600-mil HM62V8128FP-12 HM62V8128FP-15 HM62V8128LFP-12 HM62V8128LP-12 HM62V8128LP-15 HM62V8128P-12 HM62V8128P-15 TTC-02 Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: HM62V8128 Series 131072-Word X Product Preview 8-Bit High Speed CMOS Static RAM D escription O rd e rin g In fo rm atio n The H itachi H M 62V 8128 is a CM OS static RAM organized 128 kw ord X 8 bit. It realizes h ig h e r d en sity , h ig h e r p erfo rm a n ce and low


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    PDF HM62V8128 131072-Word

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONIC DESIGNS INC ^2 ED I Etoefronlc O^itgns Inc. — . —— — 3QE D • 3 a 3 ü i m QQ00bfci3 4 ■ ED 18M 8128 C /LP/P i, - . mm —■ ■ . , ■■. ■■ ■ . High Performance Megabit S R A M Module 128Kx8 Static R A M C M O S , Module Features


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    PDF QQ00bfci3 128Kx8 8128C/LP/P* 32Kx8 ED18M8128C/LP/P T-46-23-14 EDI8M8128CÃ

    Untitled

    Abstract: No abstract text available
    Text: HM62W8128 Series Product Preview 131072-Word x 8-Bit High Speed CM OS Static RAM Description O rd erin g In fo rm atio n Type No. A ccess time HM62W8128LP-10 100 ns HM62W8128LP-12 120 ns HM62W8128LP-10L 100 ns HM62W8128LP-12L 120 ns HM62W8128LP-10SL 100 ns


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    PDF HM62W8128 131072-Word

    76C8128

    Abstract: gm76c8128 76C8128/L/LL
    Text: GM76C8128/L/LL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM 76C8128/L/LL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with


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    PDF GM76C8128/L/LL 76C8128/L/LL 70/85/100ns. 32-pin 600mil) 6C8128/L/LL 76C8128 gm76c8128

    Untitled

    Abstract: No abstract text available
    Text: 128K X 8 SRAM mosaic M S M 8128 - 70/85/ 10/12 semiconductor, inc. 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The MSM8128 is a 1Mbit monolithic SRAM organised as 128K x 8. It is currently available in


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    PDF M8128 MSM8128 120ns. MIL-STD-883.

    Untitled

    Abstract: No abstract text available
    Text: m PRELIMINARY GM76FV8128,GM76FU8128,GM76FS8128,GM76FR8128 LG Semicon Co.,Ltd. 131,072 w o r d s x 8 b i t CMOS STATIC RAM Description Pin Configuration The GM76FV8128 / GM76FU8128 / GM76FS8128 / GM76FS8128 is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a


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    PDF GM76FV8128 GM76FU8128 GM76FS8128 GM76FR8128 70/85ns. 32Small

    Untitled

    Abstract: No abstract text available
    Text: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM


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    PDF GR281 24-pin GR281 PD446,

    Untitled

    Abstract: No abstract text available
    Text: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout


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    PDF GR281-4 24-pin GR281 PD446 GR281

    NVR2

    Abstract: pd446
    Text: GREENWICH 2K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • NVR2 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Program RAM No limit to number of programming cycles Fits standard 24-pin socket


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    PDF 24-pin PD446 NVR2

    gr281

    Abstract: GR281, 2K x 8
    Text: 2 K x 8 GR 281 NON VOLATILE RAM WSTRUMENTS ITO * Plug-in replacement for Static R A M * 10 years data retention * No erasure required * Fast power down * Functions as Data or Program R A M * No lim it to number of programming cycles * Standard 24-pin JEDEC pinout


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    PDF 24-pin GR281 15/iS. GR281, 2K x 8

    GM76C8128all

    Abstract: 76C8128 GoldStar gm76c8128 367 al al85 76C812 al 85
    Text: Ö6Z bZL GM76C8128A/AL/ALL GZ! GoldStar 131,072 W ORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access m em ory organized as 131,072 w ords by 8 bits. U sing a 0.8um advanced CMOS


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    PDF GM76C8128A/AL/ALL GM76C8128A/AL/ALL 70/85/100ns. 32-pin 600mil) 70/8uuULJUUUU Gi\176C8128A/AL/ALL GM76C8128all 76C8128 GoldStar gm76c8128 367 al al85 76C812 al 85

    Untitled

    Abstract: No abstract text available
    Text: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL


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    PDF HM62W8128 131072-Word 8128LP-10 8128LP-12 8128LP-1O LP-12 8128LFP-10

    MT43C8129

    Abstract: MT43C MT43C8128
    Text: M ICRO N 128K TRIPLE PORT DRAM M T43C8128/9 X 8 TP D R A M 128K x 8 DRAM WITH DUAL 256 x 8 SAMS FEATURES • • PIN ASSIGNMENT Top View 52-PIN PLCC (P-1) iess Q f f o S S S o S a S a 2iiS n n n n n n n n n n n n r " ) S D Q ia SDQ2a SDQ3a SD04a TR/OE DQ1


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    PDF T43C8128/9 550mW 512-cycle 048-bit 52-PIN MT43CS12 MT43CB12B* MT43C8129 MT43C MT43C8128

    HM62W8128-12

    Abstract: No abstract text available
    Text: HM62W8128 Series Product Preview 131072-Word x 8-B it High Speed CMOS Static RAM O rdering Inform ation D escription Type No. Access time HM62W8128LP-10 100 ns HM62W8128LP-12 120 ns HM62W8128LP-10L 100 ns HM62W8128LP-12L 120 ns HM62W8128LP-10SL 100 ns HM62W8128LP-12SL


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    PDF HM62W8128 131072-Word HM62W8128LP-10 HM62W8128LP-12 525-mil HM62W8128LP-10L 600-mil 32-pin 460-mil HM62W8128-12

    es 7240

    Abstract: SOJ40-P-400 A15C TC55BS8128J-10 TC55BS8128J-12
    Text: TOSHIBA TC55BS8128J-10/12 P R E L IM IN A R Y 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM w ith Input Registers, O utput Registers and P ass-Through Feature D e s c rip tio n T h e T C 5 5 B S 8 1 2 8 J is a 1 ,0 4 8 ,5 7 6 bit s ynch rono us sta tic ra n d o m acce ss m e m o ry fab ricate d using B iC M O S te ch n o lo g y and


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    PDF TC55BS8128J-10/12 TC55BS8128J TC55BS8125J 200mV 5BS8128J-10/12 es 7240 SOJ40-P-400 A15C TC55BS8128J-10 TC55BS8128J-12

    MT43C8129A

    Abstract: MT43C8129 MT43C
    Text: PRELIMINARY M T43C8128A/9A 128K x 8 T R IP LE -P O R T DRAM M IC R O N 128K x 8 DRAM WITH DUAL 256 x 8 SAMS FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports Fast access times: 70ns random, 22ns serial


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    PDF T43C8128A/9A 512-cycle 048-bit MT43C8128A/9A MT43C8129A MT43C8129 MT43C

    Untitled

    Abstract: No abstract text available
    Text: mosaic 128K X 8 SRAM MSM8128X - 020/25/35 semiconductor, inc. 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.3 : November 1998 131,072 x 8 CMOS High Speed Static RAM Description Features The MSM8128X is a 1Mbit monolithic SRAM


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    PDF MSM8128X MIL-STD-883 MSM8128SXLMB MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES SST/^-SS*!WW9!»a«i;!!WWS«»i ★ C apacity C onfiguration M odel No. 32k x 8 Under development A cce ss tim e n s 60 70 80 100 120 150 5 832 -i LH P -j LH P -j LH P -j LH P -j LH P H LH P 5 860 64k x 8 5 864 512k 3 2 k x 16 5 8128 128k x 8 1M


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    PDF 4QDIP/40SOP 32TSOP 32TSOHit 44TSOP

    658128

    Abstract: KM658128A
    Text: Pseudo SRAM KM658128A/AL/AL- L 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)


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    PDF KM658128A/AL/AL- 120ns 190ns 200mW 200fjA 100mA KM658128LD/ 32-Pin 600mil) 525mil) 658128 KM658128A