2sc1764
Abstract: No abstract text available
Text: 2SC1764 SILICON NPN EPITAXIAL PLANAR TYPE 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics : Output Power : Po=80Wpjjp : Minimum Gain : Gpe=14.5dB : Efficiency : ’i'c=40%(Min.)
|
OCR Scan
|
PDF
|
2SC1764
30MHz
28MHz
80Wpjjp
-30dB
80WpEP
100pF
6000pF
2sc1764
|
74l00
Abstract: 2SC1764 12ID 1S1555 20ID 80WpeP
Text: TOSHIBA {D IS CRETE/ OPTO } 909 7 2 5 0 TO SHIBA DE DDDTMtD O I CD IS C R E T E / O P T O SI LICON NPN E P IT A X IA L P L A N A R TYPE Unit in mm 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE) FEATURES : • Specified 28V, 28MHz Characteristics
|
OCR Scan
|
PDF
|
30MHz
28MHz
80Wpep
-30dB
100mA,
74l00
2SC1764
12ID
1S1555
20ID
80WpeP
|
2SC1764
Abstract: 12ID 1S1555 20ID 2-13B1A 213B1 5RL50A
Text: TOSHIBA -CDISCRETE/OPTO} 9097250 TO SH IBA "Üb DE | ciDc|?2SD DDGTMbO <DI S C R E T E / O P T O > SILICON NPN EPITAXIAL PLANAR TYPE_ 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 20V SUPPLY VOLTAGE USE Unit in mm FEATURES : Specified 28V, 28MHz Characteristics
|
OCR Scan
|
PDF
|
30MHz
28MHz
80Wpep
-30dB
-200C1
1S1555
2SC1764
12ID
1S1555
20ID
2-13B1A
213B1
5RL50A
|