FJP5200RTU
Abstract: J5200-R 2sc5200 amplifier circuit 2sc5200
Text: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 15A. High Power Dissipation : 80watts. High Fequency : 30MHz.
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FJP5200
80watts.
30MHz.
FJP1943
2SC5200/FJL4315
2SC5242/FJA4313
O220F
FJPF5200
O-220
FJP5200RTU
J5200-R
2sc5200 amplifier circuit
2sc5200
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Untitled
Abstract: No abstract text available
Text: FJP1943 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -17A. High Power Dissipation : 80watts. High Frequency : 30MHz.
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FJP1943
80watts.
30MHz.
-250V
toFJP5200
2SA1943/FJL4215
2SA1962/FJA4213
O220F
FJPF1943
O-220
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2sa1943 amplifier
Abstract: 2SA1962 hFE is transistor to220 to264 TO3P package FJP1943 FJP1943RTU FJP5200 FJPF1943
Text: FJP1943 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A. High Power Dissipation : 80watts. High Frequency : 30MHz.
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FJP1943
80watts.
30MHz.
-250V
FJP5200
2SA1943/FJL4215
2SA1962/FJA4213
O220F
FJPF1943
O-220
2sa1943 amplifier
2SA1962
hFE is transistor to220
to264
TO3P package
FJP1943
FJP1943RTU
FJP5200
FJPF1943
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FJP1943
Abstract: FJP1943OTU FJP1943RTU FJP5200 FJPF1943
Text: FJP1943 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 80watts. High Frequency : 30MHz.
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FJP1943
80watts.
30MHz.
-230V
FJP5200
2SA1943/FJL4215
2SA1962/FJA4213
O220F
FJPF1943
O-220
FJP1943
FJP1943OTU
FJP1943RTU
FJP5200
FJPF1943
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WRCJ01X-U
Abstract: AC230V WRCJ04X-U AC140V
Text: 80 WATT AC-DC CONVERTER WRCJ-00X Series 3 CHANNEL Model Specifications<AC/DC> WRCJ*X-U 80WATTS/3 OUTPUTS WRCJ01X-U WRCJ03X-U WRCJ04X-U WRCJ06X-U Input Characteristic Input Voltage AC115/230V Input Current 1.8A at AC115V/1.1A at AC230V Input Range AC85-132V/170-264V DC220-350V
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WRCJ-00X
80WATTS/3
WRCJ01X-U
WRCJ03X-U
WRCJ04X-U
WRCJ06X-U
AC115/230V
AC115V/1
AC230V
AC85-132V/170-264V
WRCJ01X-U
AC230V
WRCJ04X-U
AC140V
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radio mtbf
Abstract: No abstract text available
Text: Switch Mode Power Supply Medical Adapter AMD-24V080WxyA MODEL: AMD-24V080WxyA Features: • 80Watts Output Power. 100-240Vac Universal Input. AC Receptacle with C14 IEC320AC receptacle Efficiency > 87% No load power consumption
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AMD-24V080WxyA
80Watts
100-240Vac
IEC320AC
UL6060111/EN60601-1/CSA60601-1
AMD-24V080WxyA
radio mtbf
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Untitled
Abstract: No abstract text available
Text: FJP1943 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 80watts. High Fequency : 30MHz.
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FJP1943
80watts.
30MHz.
-230V
FJP5200
2SA1943/FJL4215
2SA1962/FJA4213
O220F
FJPF1943
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PDF
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J5200
Abstract: 2sc5200 amplifier J5200-R 2SC5200 FJP5200RTU FJP5200OTU 2Sc5200 TRANSISTOR FJP1943 FJP5200 FJPF5200
Text: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 15A. High Power Dissipation : 80watts. High Frequency : 30MHz.
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Original
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FJP5200
80watts.
30MHz.
FJP1943
2SC5200/FJL4315
2SC5242/FJA4313
O220F
FJPF5200
O-220
FJP5200
J5200
2sc5200 amplifier
J5200-R
2SC5200
FJP5200RTU
FJP5200OTU
2Sc5200 TRANSISTOR
FJP1943
FJPF5200
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MJE13007
Abstract: No abstract text available
Text: SILICON PLASTIC POWER TRANSISTOR NPN MJE13007 .suited for 115 and 220 V switch-mode applications such as Switching Regulators,Inverters,Motor Controls, Solenoid/Relay 400VOLTS/80WATTS drivers and Deflection circuits. MAXIMUM RATINGS Rating TO-220 Symbol
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MJE13007
400VOLTS/80WATTS
O-220
400mAdc)
MJE13007
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PDF
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Untitled
Abstract: No abstract text available
Text: FJP1943 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -15A. High Power Dissipation : 80watts. High Frequency : 30MHz.
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FJP1943
80watts.
30MHz.
-230V
toFJP5200
2SA1943/FJL4215
2SA1962/FJA4213
O220F
FJPF1943
O-220
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PDF
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2sc5200 amplifier
Abstract: J5200 2sc5200 amplifier circuit 2SC5200 TRANSISTOR FJP5200RTU spice model 2SC5200 J5200-R 2sc5200 amplifiers audio output TRANSISTOR NPN DATA SHEET TRANSISTOR 2SC5200
Text: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 17A. High Power Dissipation : 80watts. High Frequency : 30MHz.
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FJP5200
80watts.
30MHz.
FJP1943
2SC5200/FJL4315
2SC5242/FJA4313
O220F
FJPF5200
O-220
FJP5200
2sc5200 amplifier
J5200
2sc5200 amplifier circuit
2SC5200 TRANSISTOR
FJP5200RTU
spice model 2SC5200
J5200-R
2sc5200 amplifiers
audio output TRANSISTOR NPN
DATA SHEET TRANSISTOR 2SC5200
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F1022
Abstract: No abstract text available
Text: polyfet rf devices F1022 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1022
F1022
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F1280
Abstract: No abstract text available
Text: polyfet rf devices F1280 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1280
F1280
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1018 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1018
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Untitled
Abstract: No abstract text available
Text: LTCC QUADRATURE HYBRID COUPLERS DA T A S HE E T HPL3F 6.8.2010 FEATURES • • • • • • • • APPLICATIONS High Power Low Profile Surface Mount Package Very Low Insertion Loss Excellent Amplitude and Phase Balance High Isolation RoHS Tape and Reel for High Volume Production
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80watts
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PDF
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Untitled
Abstract: No abstract text available
Text: LTCC QUADRATURE HYBRID COUPLERS DA T A S HE E T HPM3F 2.25.2011 FEATURES • • • • • • • • APPLICATIONS High Power Low Profile Surface Mount Package Very Low Insertion Loss Excellent Amplitude and Phase Balance High Isolation RoHS Tape and Reel for High Volume Production
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80watts
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F1108
Abstract: No abstract text available
Text: polyfet rf devices F1108 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1108
F1108
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1012
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1022 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1022
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PDF
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F1012
Abstract: No abstract text available
Text: polyfet rf devices F1012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1012
F1012
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PDF
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F1018
Abstract: No abstract text available
Text: polyfet rf devices F1018 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1018
F1018
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PDF
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Untitled
Abstract: No abstract text available
Text: LTCC QUADRATURE HYBRID COUPLERS DA T A S HE E T HPI3F 6.23.2010 FEATURES • • • • • • • • APPLICATIONS High Power Low Profile Surface Mount Package Very Low Insertion Loss Excellent Amplitude and Phase Balance High Isolation RoHS Tape and Reel for High Volume Production
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80watts
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PDF
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VLT80-1001
Abstract: VLT80-4002 VLT80 VLT80-4000 VLT80-4001 VLT80-1008 EN55022-B VLT80-4004 Molex-3 41749
Text: VLT80 Series 80W single and quad output AC/DC Power Supplies Features : An industry favorite at 80-watts with no fan! Power solutions for 1U height and smaller applications are made easy with the single and quad output versions of the venerable 5.0”x3.040x1.073” EOS VLT80
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VLT80
80-watts
040x1
VLT80
UL60601-1
4EM-09-0xx
39-DE60-43839-002/A1
VLT80-1001
VLT80-4002
VLT80-4000
VLT80-4001
VLT80-1008
EN55022-B
VLT80-4004
Molex-3
41749
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PDF
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Untitled
Abstract: No abstract text available
Text: Medical Medical Adapter 15W 25W 30W 65W 85W 90W 105W 135W 150W 180W 220W 400W 5V 9V 12V 15V 18V 19V 20V 24V 28V 30V 32V 36V 48V Available or in develpment FSP015 Series Wall Mount Model Watts Output Voltage Output Current Efficiency AC Socket Dimension(mm)
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FSP015
FSP015-RAMM
FSP015-REMM
FSP015-RBMM
FSP015-RCMM
FSP015-RDMM
FSP015-RFMM
160watts.
FSP700-90MPB
180watts.
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