80V 1A NPN TRANSISTOR Search Results

80V 1A NPN TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

80V 1A NPN TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A	Original	ZXTC6720MC 185mV -220mV DS31929	PDF
DFN3020 Abstract: No abstract text available Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A	Original	ZXTC6720MC 185mV -220mV DS31929 DFN3020	PDF
MMDTA06 Abstract: a06 transistor marking a06 Text: MMDTA06 ADVANCE INFORMATION 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power	Original	MMDTA06 AEC-Q101 J-STD-020 MIL-STD-202, DS35114 MMDTA06 a06 transistor marking a06	PDF
MMDTA06 Abstract: No abstract text available Text: MMDTA06 ADV AN CE I N FORM AT I ON 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power	Original	MMDTA06 AEC-Q101 DS35114 MMDTA06	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated Green DXT5616U 80V NPN MEDIUM POWER TRANSISTOR IN TO126 Features Mechanical Data •    BVCEO > 80V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current Low Saturation Voltage VCE sat < 500mV @ 0.5A	Original	DXT5616U 500mV MIL-STD-202, 400mg DS37030	PDF
Untitled Abstract: No abstract text available Text: BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features     BVCEO > 80V Ic = 1A High Continuous Collector Current	Original	BCX5616Q 500mV BCX5316Q AEC-Q101 DS37024	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated BSR43 80V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data •          BVCEO > 80V IC = -1A High Continuous Current Low saturation voltage VCE sat < 250mV @ 150mA Complementary type BSR33	Original	BSR43 250mV 150mA BSR33 AEC-Q101 J-STD-020 MIL-STD-202, DS33018	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage 185mV max @ 1A	Original	ZXTN620MA 185mV AEC-Q101 DFN2020B-3 DS31894	PDF
Untitled Abstract: No abstract text available Text: 2SCR544P Data Sheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A MPT3 Base Collector Emitter 2SCR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544P 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=1A/50mA)	Original	2SCR544P SC-62) OT-89> 2SAR544P A/50mA) R1102A	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage 185mV max @ 1A	Original	ZXTN620MA 185mV AEC-Q101 DFN2020B-3 DS31894	PDF
transistor p38 Abstract: 100 p38 transistor MOSFET 4446 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F Text: ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA ZXTN2038FTC transistor p38 100 p38 transistor MOSFET 4446 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F	PDF
2N4912 Abstract: Vceo 80V Ic 1A 2N4900 transistor Ic 1A datasheet NPN IC 1A 80V 1A NPN Transistor Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4912 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 80V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation	Original	2N4912 2N4900 500mA 100kHz 2N4912 Vceo 80V Ic 1A 2N4900 transistor Ic 1A datasheet NPN IC 1A 80V 1A NPN Transistor	PDF
TS16949 Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813 Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 TS16949 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541	PDF

T100 Abstract: 2SCR544P Text: Midium Power Transistors 80V / 2.5A 2SCR544P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) (1) 2) High speed switching  Applications	Original	2SCR544P R0039A T100 2SCR544P	PDF
Untitled Abstract: No abstract text available Text: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6	Original	2SCR544R R1120A	PDF
Untitled Abstract: No abstract text available Text: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6	Original	2SCR544R 40x40x0 R1120A	PDF
Untitled Abstract: No abstract text available Text: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6	Original	2SCR544R R1010A	PDF
Untitled Abstract: No abstract text available Text: Midium Power Transistors 80V / 2.5A 2SCR544P  Dimensions (Unit : mm)  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) 2) High speed switching	Original	2SCR544P R0039A	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR  FEATURES High VCEO= 80V High IC= 1A DC Good hFE linearity. Low VCE(SAT) *Complements the 2SB1260.  ORDERING INFORMATION Ordering Number 2SD1898G-x-AB3-R 2SC4617G-x-AE3-R	Original	2SD1898 2SB1260. 2SD1898G-x-AB3-R 2SC4617G-x-AE3-R OT-89 OT-23 2SD1898G QW-R208-030	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES High VCEO= 80V High IC= 1A DC Good hFE linearity. Low VCE(SAT) *Complements the 2SB1260. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1898L-x-AB3-R	Original	2SD1898 2SB1260. OT-89 2SD1898L-x-AB3-R 2SD1898G-x-AB3-R QW-R208-030	PDF
2SB1260 Abstract: 2SD1898 Text: UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES High VCEO= 80V High IC= 1A DC Good hFE linearity. Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL	Original	2SD1898 2SB1260. OT-89 200ms QW-R208-030 2SB1260 2SD1898	PDF
Untitled Abstract: No abstract text available Text: UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES High VCEO= 80V High IC= 1A DC Good hFE linearity. Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL	Original	2SD1898 2SB1260. OT-89 200ms QW-R208-030	PDF
mps3569 Abstract: ebc Transistor Text: CRO DESCRIPTION MPS3569 NPN SILICON TRANSISTOR TO-92A MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS 80V 40V 5V 1A 625mW -55 to +150°C V cbo VcEO V ebo Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	MPS3569 MPS3569 O-92A 625mW 150mA 150mA Oct-96 300uS, ebc Transistor	PDF

80V 1A NPN TRANSISTOR Search Results

80V 1A NPN TRANSISTOR Result Highlights (5)

80V 1A NPN TRANSISTOR Datasheets Context Search

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DFN3020

MMDTA06

MMDTA06

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transistor p38

2N4912

TS16949

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T100

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2SB1260

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mps3569