Untitled
Abstract: No abstract text available
Text: FU JI 2SK2766-01R N-channel MOS-FET S tlM s u ltìU K FAP-IIS Series 800V > Features - 2Q 7A 80W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2766-01R
80fJS
253fl7TE
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Untitled
Abstract: No abstract text available
Text: Technology, Incorporated Timer E 2 1024K Electrically Erasable PRO M PRELIMINARY DATASHEET FEATURES • High Speed • 120 nsec Maximum Access Time High Endurance • tO,000 Cycles/Byte • 10 Year Data Retention ■ Low Power CMOS Technology • 70 mA Active Current
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1024K
80fjsec
28C010A
MD400096/-
120-120ns
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54221
Abstract: PIC1650A
Text: C,1 Ml l<AI INSINUIMI NI AY-5-4121 AY-5-4221 Fluorescent Display Driver PIN CONFIGURATION FEATURES AY -5-4121/4221 • M u ltip le x d riv e fo r 7 o r 21 d ig its w ith o u t loss o f b rig h tn e s s ■ A c c e p ts da ta in B C D o r 7 se g m e n t fo rm a t
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AY-5-4121
AY-5-4221
1000pF
54221
PIC1650A
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Untitled
Abstract: No abstract text available
Text: BEE D • 023fc.32Q Q0171b7 = « S I P SIPMOS N Channel MOSFET _ S IE M E N S / SPCLi BSS 138 X ^ Z S ' ^ S T _ S EM IC O N D S • SIPMOS - enhancement mode • Draln-source voltage Vt» = 50V • Continuous drain current Io = 0.22A • Drain-source on-resistance
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023fc
Q0171b7
Q62702-S566
G017171
033b3S0
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3 ,6 Q 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof TO-3P 4.5 > Applications
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2SK2528-01
0D04b53
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