Untitled
Abstract: No abstract text available
Text: RURG8060_F085 80A, 600V Ultrafast Rectifier Features 80A, 600V Ultrafast Rectifier • High Speed Switching trr=74ns(Typ. @ IF=80A ) The RURG8060_F085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.
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RURG8060
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Untitled
Abstract: No abstract text available
Text: RURG8060_F085 80A, 600V Ultrafast Rectifier Features 80A, 600V Ultrafast Rectifier • High Speed Switching trr=74ns(Typ. @ IF=80A ) The RURG8060_F085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.
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RURG8060
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXFK80N50Q3 IXFX80N50Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 500V 80A Ω 65mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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O-264)
O-264
PLUS247
PLUS247)
IXFK80N50Q3
IXFX80N50Q3
250ns
O-264
PLUS24711.
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFK80N50Q3 IXFX80N50Q3 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 500V 80A Ω 65mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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IXFK80N50Q3
IXFX80N50Q3
250ns
O-264
80N50Q3
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80D CABINET
Abstract: CC109142980 CC408574395 QS865ATEZ LSC-2030 QS861ATEZ CS787B540 JA-CPS6-001LP QS873A CPS2000
Text: PRODUCT OVERVIEW OSP Retrofit Power System Cost-effective Energy Efficiency Upgrade Benefits Reliability – Extends the lifecycle of deployed CPS2000, CPS4000, OLS and SLC power plants – Proven field performance – Controller continuity Intelligence • Preserves distribution and
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CPS2000,
CPS4000,
CPS2000
877-LINEAGE
CPS6000
80D CABINET
CC109142980
CC408574395
QS865ATEZ
LSC-2030
QS861ATEZ
CS787B540
JA-CPS6-001LP
QS873A
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3 phase bridge rectifier 400HZ
Abstract: 3-phase bldc motor single chip 500V direct drive MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab single phase fully controlled rectifier 110v 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V fast recovery zener ssr 115v 400Hz
Text: Products and Solutions Sensitron Semiconductor • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 143-0209 Fully Integrated Motor Controllers
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AS9100
MIL-PRF-19500
MIL-PRF-38534
3 phase bridge rectifier 400HZ
3-phase bldc motor single chip 500V direct drive
MTBF fit IGBT 1200
H BRIDGE inverters using igbt in matlab
single phase fully controlled rectifier 110v
440V ac to 390V dc converter circuit
SEN-5282-2
full wave bridge rectifier 25A 50V
fast recovery zener
ssr 115v 400Hz
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PDF
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18 ML 2A ptc
Abstract: Q6025LX FHN20G FHN26G2 pico electronics transformers 1500w tvs diode SMD FHN26G2, ROHS DIODE 3A do-214 RECTIFIER D6025L 1.5ke series
Text: CIRCUIT PROTECTION SOLUTIONS Electronics Circuit Protection Product Selection Guide DO W Lit N te LO lfu A se D .co C m AT /c A at LO alo G gs S A guide to selecting Littelfuse circuit protection components for electronic applications. Broadest and Deepest
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EC102
EC1102v1E1007
18 ML 2A ptc
Q6025LX
FHN20G
FHN26G2
pico electronics transformers
1500w tvs diode SMD
FHN26G2, ROHS
DIODE 3A do-214
RECTIFIER D6025L
1.5ke series
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IXFN80N50Q2
Abstract: No abstract text available
Text: IXFN80N50Q2 HiperFETTM Power MOSFET Q2-Class VDSS ID25 RDS on trr = = 500V 72A 65m 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M
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IXFN80N50Q2
250ns
E153432
80N50Q2
5-28-08-G
IXFN80N50Q2
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ISOPLUS247
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings
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80N20Q
ISOPLUS247
247T5
ISOPLUS247
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings
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80N20Q
ISOPLUS247
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Untitled
Abstract: No abstract text available
Text: IXFN80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = 600V 66A 77m 250ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR
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IXFN80N60P3
250ns
E153432
80N60P3
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IXFR80N60P3
Abstract: No abstract text available
Text: IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = 600V 48A 85m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M
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IXFR80N60P3
250ns
ISOPLUS247
E153432
80N60P3
IXFR80N60P3
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IXFR80N50Q3
Abstract: No abstract text available
Text: Preliminary Technical Information IXFR80N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 50A Ω 72mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR80N50Q3
250ns
ISOPLUS247
E153432
80N50Q3
6-20-11-C
IXFR80N50Q3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR80N50Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 50A Ω 72mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR80N50Q3
250ns
ISOPLUS247
E153432
150Fig.
80N50Q3
6-20-11-C
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IXFN80N60
Abstract: IXFN80N60P3
Text: Advance Technical Information IXFN80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A Ω 70mΩ 250ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFN80N60P3
250ns
E153432
80N60P3
IXFN80N60
IXFN80N60P3
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n-channel 250V 80a power mosfet
Abstract: No abstract text available
Text: Advance Technical Information IXFR80N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 45A Ω 72mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings
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IXFR80N50Q3
250ns
ISOPLUS247
E153432
80N50Q3
04-04-11-B
n-channel 250V 80a power mosfet
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFN80N60P3 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A Ω 70mΩ 250ns miniBLOC E153432 S G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings
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IXFN80N60P3
250ns
E153432
80N60P3
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80N60
Abstract: No abstract text available
Text: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFR80N60P3
250ns
ISOPLUS247
E153432
80N60P3
80N60
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Ixfn80n50q3
Abstract: No abstract text available
Text: Advance Technical Information IXFN80N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 63A Ω 65mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFN80N50Q3
250ns
E153432
80N50Q3
3-02-11-A
Ixfn80n50q3
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFR80N60P3 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFR80N60P3
250ns
ISOPLUS247
E153432
80N60P3
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 VDSS ID25 = 500 V = 80 A Ω = 50 mΩ RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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80N50
OT-227
E153432
125OC
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125OC
Abstract: IXFK72N20 IXFK80N20
Text: HiPerFETTM Power MOSFETs VDSS IXFK72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFK72N20
IXFK80N20
72N20
80N20
125OC
Figure10.
125OC
IXFK72N20
IXFK80N20
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E.78996
Abstract: ir e.78996 IRK 160 78996 D171 D172 D173 D174 3 phase plating rectifier
Text: •I International HRectifier s e r ie s ir k .61, HIGH VOLTAGE DIODES .81, .101 NEW ADD-A-pak Power Modules INTERNATIONAL RECTIFIER Features ■ ■ ■ ■ ■ ■ ■ ■ ■ 4055452 0Qlbb47 «Ì37 ■ INR bSE T> 60A 80A 100A High voltage E lectrically isolated base plate
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554S2
E.78996
ir e.78996
IRK 160
78996
D171
D172
D173
D174
3 phase plating rectifier
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Untitled
Abstract: No abstract text available
Text: PIXYS AdvancedTechnioal Information HiPerFET Power MOSFETs IXFR 80N20Q ISOPLUS247™, Q-Class Electrically Isolated Back Surface VOSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr <200 ns Symbol Test Conditions Maximum Ratings
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OCR Scan
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80N20Q
ISOPLUS247TM,
Cto150
247TM
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