CHN 804 diode
Abstract: CHN 709 CHN 633 diode chn 529 SEMITOP 2 Package CHN 633 Diodes Semikron Semitop sk 70 kq diode PFZ 15A semikron sk 50 et 12 chn 725
Text: SEMITOP Cool Components SEMITOP® "Cool Alternative" Features • Low Rth junction to heatsink For isolation the SEMITOP uses a ceramic substrate. The evenly distributed pressure and the evenly distributed placement of the chips on the ceramic substrate results in a reduced
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therm86
D-90253
CHN 804 diode
CHN 709
CHN 633 diode
chn 529
SEMITOP 2 Package
CHN 633 Diodes
Semikron Semitop sk 70 kq
diode PFZ 15A
semikron sk 50 et 12
chn 725
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semikron sk 50 et 12
Abstract: CHN 346 IGBT CHN 633 diode Semikron Semitop sk 70 kq 12 CHN 709 Semikron sk 51 Semikron Semitop sk 70 kq um 3567 CHN 633 Diodes semikron sk 23 gd 063
Text: SEMITOP Cool Components SEMITOP® "Coole Alternative" Merkmale einer von SEMIKRON aufgebrachten Wärmeleitschicht bezo- • Niedriger Wärmewiderstand gen werden. Dabei entfällt für den SEMITOP verwendet die bewähr- Anwender die aufwendige und te DCB Keramik zur elektrischen
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D-90253
semikron sk 50 et 12
CHN 346 IGBT
CHN 633 diode
Semikron Semitop sk 70 kq 12
CHN 709
Semikron sk 51
Semikron Semitop sk 70 kq
um 3567
CHN 633 Diodes
semikron sk 23 gd 063
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Untitled
Abstract: No abstract text available
Text: MA2710D10000000 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2710D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2710D10000000
MA2710D
O-252
D020210
O-252
3000pcs
6000pcs
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AN-994
Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB10B60KDPbF
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-220.
AN-994.
O-220
AN-994
C-150
IRF530S
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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Untitled
Abstract: No abstract text available
Text: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382B
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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94925B
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
O-262
I20AB
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AN-994
Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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4925A
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
IRGB10B60KD
IRGS10B60KD
O-262
IRGSL10B60KD
AN-994.
AN-994
C-150
IRF530S
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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IRGB10B60KD
Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382C
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
O-220AB
IRGB10B60KD
C-150
IRF1010
IRF530S
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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AN-994
Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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4925A
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
IRGB10B60KD
IRGS10B60KD
O-262
IRGSL10B60KD
AN-994.
AN-994
C-150
IRF530S
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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d 1830
Abstract: No abstract text available
Text: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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94925C
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
O-262
I20AB
d 1830
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Untitled
Abstract: No abstract text available
Text: PD - 94382 IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGS10B60KD
IRGSL10B60KD
IRGS10B60KD
O-262
IRGSL10B60KD
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Untitled
Abstract: No abstract text available
Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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4925A
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
IRGB10B60KD
IRGS10B60KD
O-262
IRGSL10B60KD
AN-994.
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irf 1830
Abstract: 10A IGBT driver IC IRGB10B60KD C-150 IRGS10B60KD IRGSL10B60KD IRL3103L TRANSISTOR marking ar code irf 44 ns
Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382D
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
AN-994.
irf 1830
10A IGBT driver IC
IRGB10B60KD
C-150
IRGS10B60KD
IRGSL10B60KD
IRL3103L
TRANSISTOR marking ar code
irf 44 ns
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irf 1830
Abstract: diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607
Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382D
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
AN-994.
irf 1830
diode 10a 400v
C-150
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
IRL3103L
irf 607
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CMP12
Abstract: CMP120N03LD06
Text: CMP120N03LD06 N-CHANNEL TRENCH MOSFET APPLICATION FEATURES ! Buck Converter High Side Switch ! Low ON Resistance ! Other Applications ! Low Gate Charge ! Peak Current vs Pulse Width Curve VDSS RDS ON Typ. ID ! Inductive Switching Curves 30V 5.3mΩ 115A !
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CMP120N03LD06
O-252
10Vted
CMP12
CMP120N03LD06
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Untitled
Abstract: No abstract text available
Text: CMT120N03 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS ON Typ. ID Inductive Switching Curves 30V 5.3mΩ 115A Improved UIS Ruggedness
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CMT120N03
O-252
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116765-000
Abstract: 1162930000
Text: Datasheet WMF 2.5 Terminal Series NEW The WMF 2.5 multi-functional terminal series is uniquely designed for DCS marshalling where increased functionality, improved spacing, higher wiring density and ease of terminal installation are desired. The WMF 2.5 series is
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10-36VAC/DC
30-70VAC/DC
60-150VAC/DC
100-250VAC/DC
9/11-2M-LIT1019
116765-000
1162930000
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h05 diode
Abstract: No abstract text available
Text: Datasheet WMF 2.5 Terminal Series NEW The WMF 2.5 multi-functional terminal series is uniquely designed for DCS marshalling where increased functionality, improved spacing, higher wiring density and ease of terminal installation are desired. The WMF 2.5 series is
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10-36VAC/DC
30-70VAC/DC
60-150VAC/DC
100-250VAC/DC
9/11-2M-LIT1019
h05 diode
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ge 130l10
Abstract: GE capacitors 150l20 GE 47Z7 15a h3 fuse sf thermistor 420l40 GE 150L10 GE 100z15 GE 130L20B DIN 13715 2011 576-V100ZA15P
Text: CIRCUIT PROTECTION Varistors AVX. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 546, 547 Epcos. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .548, 549
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30Screw
ge 130l10
GE capacitors 150l20
GE 47Z7
15a h3 fuse sf
thermistor 420l40
GE 150L10
GE 100z15
GE 130L20B
DIN 13715 2011
576-V100ZA15P
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pcf 85741
Abstract: 85741 PCF 799 Apex Microtechnology PZT Transducer 1N4148 AD707 PA03 PB50 PB58
Text: ATE APPLICATIONS • High Voltage PPS • High Current PPS • AC Power Supplies • Pin Drivers • Waveform Generators • Active Loads There are an extensive array of applications for high power, high voltage, and/or high speed linear amplifiers in almost any type of automatic test equipment. Some of the most
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470pF
pcf 85741
85741
PCF 799
Apex Microtechnology
PZT Transducer
1N4148
AD707
PA03
PB50
PB58
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Untitled
Abstract: No abstract text available
Text: C ir s A v u iu w v ^ Corporation ▼ SIGNAL PROCESSING EXCELLENCE SP690T/S/R, SP802T/S/R. SP804T/S/R, and SP805T/S/R 3.0V/3.3V Microprocessor Supervisory Circuits • Precision Voltage Monitor for Power-Fail or Low-Battery Warning ■ R ESET and R ESET Outputs
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OCR Scan
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SP690T/S/R,
SP802T/S/R.
SP804T/S/R,
SP805T/S/R
200ms
40jaA
MAX690T/S/R,
MAX802T/S/R,
MAX804T/S/R,
MAX805T/S/R
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itw 104 600v
Abstract: MIG25Q90
Text: TO SH IBA TEN TATIVE MIG25Q904H T O S H IB A IN T E G R A T E D IG B T M O D U L E SILIC O N N C H A N N E L IG B T MIG25Q904H H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S • In teg ra te s Inverter, Converter and B rake
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OCR Scan
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MIG25Q904H
/1200V
30/us
/1600V
itw 104 600v
MIG25Q90
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p802t
Abstract: No abstract text available
Text: C irs A v v i f ^c Corporation sw A SIGNAL PROCESSING EXCELLENCE SP690T/S/R, SP802T/S/R. SP804T/S/R, and SP805T/S/R 3.0V/3.3V Microprocessor Supervisory Circuits • Precision Voltage Monitor for Power-Fail or Low-Battery Warning ■ RESET and RESET Outputs
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OCR Scan
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PDF
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SP690T/S/R,
SP802T/S/R.
SP804T/S/R,
SP805T/S/R
200ms
MAX690T/S/R,
MAX802T/S/R,
MAX804T/S/R,
MAX805T/S/R
p802t
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LR kbpc3510
Abstract: kbp 3510 kbu808 Rectifier s01cc KBU80B C3502-AKBPC3508 pc 2501 kbp02 BPC802 KBU diode bridge
Text: < § Silicon Bridge Rectifiers 1 Amp Silicon Bridge Rectifiers D F 005-D F10 Series. S in g le -p h a se , fu ll-w a v e b rid ge re ctifiers in 4 -p in D u a l-in -L in e pa ckages. 50 V to 10 0 0 V VRRM . 1A (l0 ), 3 0 A p e a k o n e -h a lf c y c le surge. E poxy p a c k a g e has U L 9 4 V -0 flam e re ta rd a n t rating. Lead s o ld e ra b le per M IL -S T D
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OCR Scan
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005-D
RDF005-RDF10
C15/25/35
RKBPC3501
C3S10
KBPC3500
LR kbpc3510
kbp 3510
kbu808 Rectifier
s01cc
KBU80B
C3502-AKBPC3508
pc 2501
kbp02
BPC802
KBU diode bridge
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