8029 multiplexer
Abstract: 8029 if multiplexer multiplexer buffer register matrix multiplexer multiplexer 64 HN29W12811
Text: HN29W12811 Series Block Diagram Sector address buffer X-decoder 8192 x 2048 + 64 × 8 memory matrix Data register (2048 + 64) •• I/O0 to I/O7 • • 8029 - 8192 2048 + 64 • Multiplexer • Data input buffer • • Input data control • • Y-gating
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HN29W12811
8029 multiplexer
8029
if multiplexer
multiplexer
buffer register
matrix multiplexer
multiplexer 64
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8029
Abstract: if multiplexer multiplexer 8029 multiplexer
Text: HN29W12811BP Series Block Diagram Sector address buffer X-decoder 8192 x 2048 + 64 × 8 memory matrix Data register (2048 + 64) •• I/O0 to I/O7 • • Multiplexer 8029 - 8192 2048 + 64 • • Data input buffer • • Input data control • • Y-gating
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HN29W12811BP
8029
if multiplexer
multiplexer
8029 multiplexer
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8029 l2 circuit
Abstract: 8029 l2 0004H 0005H HN29V2G74WT-30
Text: HN29V2G74WT-30 128M x 8-bit ×2 AG-AND Flash Memory REJ03C0182-0200Z Rev. 2.00 Jul.21.2004 Description The HN29V2G74 is a 2G-bit AG-AND flash memory. It mounts two 1G-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V
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HN29V2G74WT-30
REJ03C0182-0200Z
HN29V2G74
8029 l2 circuit
8029 l2
0004H
0005H
HN29V2G74WT-30
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0004H
Abstract: 0005H HN29V2G74WT-30 8029 l2
Text: HN29V2G74WT-30 128M x 8-bit ×2 AG-AND Flash Memory REJ03C0182-0001Z Preliminary Rev. 0.01 Feb.20.2004 Description The HN29V2G74 is a 2G-bit AG-AND flash memory. It mounts two 1G-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V
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HN29V2G74WT-30
REJ03C0182-0001Z
HN29V2G74
0004H
0005H
HN29V2G74WT-30
8029 l2
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Untitled
Abstract: No abstract text available
Text: PowerFlash P1U1GR30AT-G30CB 128M x 8-bit AG-AND Flash Memory Rev. 1.00 Jan.16.2006 Description The P1U1GR30A series achieves a write speed of 10 Mbytes/sec. Using 0.13 m process technology and AG-AND Assist Gate- AND type Flash memory cell with multi level cell technology provides
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P1U1GR30AT-G30CB
P1U1GR30A
TFP-48DA)
TFP-48DA
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design adc interfaces with 8088 microprocessor
Abstract: adc interfaces with 8088 microprocessor 8085A hex code 8029 multiplexer Z80 ADC dip 8029 80802b
Text: Hybrid Systems W W C O R P O R A T IO N u o a/icn |“ |^ Microprocessor Compatible Analog I/O Subsystem FEATURES • ■ ■ ■ ■ 4 Analog Input Channels 8-Bit ADC 4-, 8-Bit DAC Outputs Complete mP Interface 28-Pin Package -. J r -
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OCR Scan
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28-Pin
R675-5
design adc interfaces with 8088 microprocessor
adc interfaces with 8088 microprocessor
8085A hex code
8029 multiplexer
Z80 ADC
dip 8029
80802b
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Untitled
Abstract: No abstract text available
Text: HN29V1G91T-30 128M x 8-bit AG-AND Flash Memory REJ03C0056-0300Z Rev. 3.00 Jun.03.2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND Assist GateAND type Flash memory cell using multi level cell technology provides both the most cost effective
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HN29V1G91T-30
REJ03C0056-0300Z
HN29V1G91
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HN29V1G91T-30
Abstract: NSB2 8029 l2 0004H 0005H HN29V1G91
Text: HN29V1G91T-30 128M x 8-bit AG-AND Flash Memory REJ03C0056-0400Z Rev. 4.00 Jul.20.2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND Assist GateAND type Flash memory cell using multi level cell technology provides both the most cost effective
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HN29V1G91T-30
REJ03C0056-0400Z
HN29V1G91
HN29V1G91T-30
NSB2
8029 l2
0004H
0005H
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8029 l2
Abstract: No abstract text available
Text: HN29V1G91T-30 128M x 8-bit AG-AND Flash Memory REJ03C0056-0200Z Rev. 2.00 Dec.19.2003 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND Assist GateAND type Flash memory cell using multi level cell technology provides both the most cost effective
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HN29V1G91T-30
REJ03C0056-0200Z
HN29V1G91
8029 l2
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SCK 108
Abstract: AD7685 AD7686 AD7687 AD7691 AD7694 AD7942 AD7946 ADA4841
Text: 16-Bit, 500 kSPS PulSAR ADC in MSOP/QFN AD7686 FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Battery-powered equipment Data acquisitions Instrumentation Medical instruments Process controls IN– AD7686 1.8V TO VDD SCK 3- OR 4-WIRE INTERFACE SPI, DAISY CHAIN, CS
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16-Bit,
AD7686
/SOT-23
14-/16-/18-Bit
AD7691
AD7684
AD7687
AD7680
AD7685
SCK 108
AD7685
AD7686
AD7687
AD7691
AD7694
AD7942
AD7946
ADA4841
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HN29W12811
Abstract: HN29W12811BP-60 Hitachi DSA0047
Text: HN29W12811BP Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1260 (Z) Preliminary Rev. 0.0 Apr. 18, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811BP
029-sector
984-bit)
ADE-203-1260
HN29W12811
HN29W12811BP-60
Hitachi DSA0047
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800H
Abstract: HN29W12811 HN29W12811T-60 Hitachi DSA00358
Text: HN29W12811 Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1183C (Z) Rev. 2.0 Feb. 7, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811
029-sector
984-bit)
ADE-203-1183C
800H
HN29W12811T-60
Hitachi DSA00358
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HN29W12811
Abstract: HN29W12811BP-60 Hitachi DSA0070
Text: HN29W12811BP Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1260 (Z) Rev. 0.0 Apr. 18, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811BP
029-sector
984-bit)
ADE-203-1260
HN29W12811
HN29W12811BP-60
Hitachi DSA0070
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ADR43x
Abstract: Analog Devices, branding code BA SCK 108 10-lead lfcsp capacitor-array binary-weighted hexa chain AD7680 AD7683 AD7684 AD7685
Text: 16-Bit, 500 kSPS PulSAR ADC in MSOP/QFN AD7686 APPLICATION DIAGRAM FEATURES 0.5V TO 5V 16-bit resolution with no missing codes Throughput: 500 kSPS INL: ±0.6 LSB typ, ±2 LSB max ±0.003% of FSR S/(N + D): 92.5 dB @ 20 kHz THD: −110 dB @ 20 kHz Pseudo-differential analog input range
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16-Bit,
AD7686
16-bit
10-lead
OT-23
AD7685,
AD7687,
AD7688
ADR43x
Analog Devices, branding code BA
SCK 108
10-lead lfcsp
capacitor-array binary-weighted
hexa chain
AD7680
AD7683
AD7684
AD7685
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Hitachi DSA0092
Abstract: 800H HN29W12811 HN29W12811T-60
Text: HN29W12811 Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1183D (Z) Rev. 3.0 Apr. 13, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811
029-sector
984-bit)
ADE-203-1183D
Hitachi DSA0092
800H
HN29W12811T-60
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AH10T
Abstract: hn29w12811t-50 Hitachi DSA00170
Text: HN29W12811 シリ−ズ 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADJ-203-551A (Z) ’00. 9. 4 暫定仕様 Rev. 0.1 概要 HN29W12811 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル
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HN29W12811
029-sector
984-bit)
ADJ-203-551A
50/80ns
HN29W12811T-50
HN29W12811T-80
AH10T
hn29w12811t-50
Hitachi DSA00170
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2112N
Abstract: PD-2049 800H HN29W12811 HN29W12811T-60 2111N CA2CE 2111-m Hitachi DSA00190 826H
Text: HN29W12811 シリ−ズ 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADJ-203-551C (Z) ’01. 2. 7 Rev. 2.0 概要 HN29W12811 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル
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HN29W12811
029-sector
984-bit)
ADJ-203-551C
HN29W12811T-60
48-pin
TFP-48DA)
2112N
PD-2049
800H
HN29W12811T-60
2111N
CA2CE
2111-m
Hitachi DSA00190
826H
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ipc 8109
Abstract: MLX75031 MLX75308
Text: MLX75031 Optical Gesture & Proximity Sensing IC with Integrated LED Drivers Features & Benefits Applications Two independent Active Light measurement channels for proximity sensing and/or gesture recognition Integrated DC light cancellation circuitry
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MLX75031
16bit
ISO14001
39010xxxxx
Jan/13
ipc 8109
MLX75031
MLX75308
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usb to SDIO
Abstract: ADC12B sam3u 3 track magnetic card reader schematics ATSAM3U1EA-AU 6430FS
Text: Features • Core • • • • • • – ARM Cortex®-M3 revision 2.0 running at up to 96 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set Memories – From 64 to 256 Kbytes embedded Flash, 128-bit wide access, memory accelerator,
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128-bit
6430FS
10-Feb-12
usb to SDIO
ADC12B
sam3u
3 track magnetic card reader schematics
ATSAM3U1EA-AU
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5540a
Abstract: FPS 5038
Text: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. CX29503 Broadband Access Multiplexer BAM The CX29503 Broadband Access Multiplexer (BAM) is a highly integrated, cost-effective,
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CX29503
CX29503
MPC860
29503-DSH-002-B
5540a
FPS 5038
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RBS 6202
Abstract: rbs 6201 manual rbs 6101 description J 5027-R RBS 6201 rbs 6201 specification rbs 6201 POWER CONSUMPTION rbs 6201 description alarms of RBS 2106 ch9i
Text: Advance Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. CX29503 Broadband Access Multiplexer BAM The CX29503 Broadband Access Multiplexer (BAM) is a highly integrated, cost-effective,
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CX29503
CX29503
0x72--Transmit
MPC860
500238B
RBS 6202
rbs 6201 manual
rbs 6101 description
J 5027-R
RBS 6201
rbs 6201 specification
rbs 6201 POWER CONSUMPTION
rbs 6201 description
alarms of RBS 2106
ch9i
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J 5027-R
Abstract: rbs 6201 POWER CONSUMPTION rbs 6201 description rbs 6201 manual rbs 6101 description RBS 6202 rbs 6201 specification h 629a 5253 1007 alarms of RBS 2106
Text: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. CX29503 Broadband Access Multiplexer BAM The CX29503 Broadband Access Multiplexer (BAM) is a highly integrated, cost-effective,
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CX29503
CX29503
0x72--Transmit
MPC860
29503-DSH-002-B
J 5027-R
rbs 6201 POWER CONSUMPTION
rbs 6201 description
rbs 6201 manual
rbs 6101 description
RBS 6202
rbs 6201 specification
h 629a
5253 1007
alarms of RBS 2106
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J 5027-R
Abstract: Dlink 526b bc 540b ch9i 5027-r Power DIODE A30 8155 intel microprocessor block diagram 55A6 marking 55a4 0x10-Timer
Text: Advance Information CX29503 Broadband Access Multiplexer BAM Re vi e w This document contains information on a product under development. The parametric information contains target parameters that are subject to change. Distinguishing Features • Capacity
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CX29503
CX29503:
J 5027-R
Dlink 526b
bc 540b
ch9i
5027-r
Power DIODE A30
8155 intel microprocessor block diagram
55A6
marking 55a4
0x10-Timer
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cp clare reed relay
Abstract: ECG transistor replacement guide book free sip 1A05 12V 40W Fluorescent Lamp Driver circuit Diagram CP Clare Prme 15002 cp clare u prma 2a05 REED RELAY 15005 LSR2C05 CLARE REED RELAY PRMA 1a24 clare prme 15005
Text: SECTIONS CP Clare Company Overview 1 Product Selection Guide 2 Advanced Magnetic Products 3 Circuit Products 4 Reed Relay Products 5 Switch and Sensor Products 6 Surge Protection Products 7 Glossary 8 Index by Part Number 9 www.cpclare.com iii TABLE OF CONTENTS
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