FIM37200
Abstract: 100GBASE-LR4
Text: 100GE CFP Transceiver Description • CFP MSA Compliant • Data rate 103.125G 100GE & 111.809G (OTU-4) • Hot-pluggable • +3.3V single power supply • Dimensions (L W H) 145 77 14 mm • RoHS compliant Specifications Part Number Application Data Rate, each lane
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100GE
100GE)
FIM37100
FIM37200
FIM37101
FIM37201
100GBASE-LR4
100GBASE-ER4
FIM37200
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SCF1001L4
Abstract: 8029 l2 SCF1011L4LNGG01
Text: TS-S12D072D January, 2013 100Gb/s CFP Optical Transceiver Module SCF1001L4 Series 100GBASE-LR4, ITU-T OTU-4,1300nm 4-lane WDM, EA-DFB, PIN-PD Features Æ 4-lane x 25.78Gb/s L-WDM Optical Interface Ü High quality and reliability optical sub-assemblies Ü
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TS-S12D072D
100Gb/s
SCF1001L4
100GBASE-LR4,
1300nm
78Gb/s
800GHz
IEEE802
8029 l2
SCF1011L4LNGG01
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"Schottky Barrier Diodes"
Abstract: dh38 dh379 DH378 DH385
Text: DH378.DH385 G a A s S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Chip diodes : 2 to 60GHz Case style flexibility M208, BH10, F51. Operating frequency range : packaged diodes : 2 to 40GHz A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used
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DH378.
DH385
40GHz
60GHz
"Schottky Barrier Diodes"
dh38
dh379
DH378
DH385
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE ]> • PD1XX2 SERIES bSHRflST 0014705 TiT » M I T S MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD1XX2 is a silicon avalanche photodiode (Si-APD) • High speed response (pulse rise tim e 150ps)
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150ps)
800GHz)
AD1000)
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APX378
Abstract: C116
Text: APX378 GaAs BEAM LEAD SCHOTTKY R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz Low capacitance Extremely rugged Passivated planar process construction. A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used as mixer or detector in receivers of frequency
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APX378
94GHz
94GHz.
APX378)
APX378
C116
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750NR
Abstract: AD1000 1000nm ir avalanche photodiodes M025 PD1002 PD1032 10 gb laser diode Silicon apd
Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES LIE D • b S 4 tìfl2cì 0 a m 7 0 S MITSUBISHI PD1XX2 SERIES TTT « M I T S DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME FEATURES DESCRIPTION PD 1XX2 is a silico n avalanche p h o to d io d e (S i-A P D )
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PD1002,
PD1032
150ps)
800GHz)
AD1000)
750NR
AD1000
1000nm ir
avalanche photodiodes
M025
PD1002
PD1032
10 gb laser diode
Silicon apd
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