80 V NPN EPITAXIAL SILICON TRANSISTOR Search Results

80 V NPN EPITAXIAL SILICON TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

80 V NPN EPITAXIAL SILICON TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V 80 V	OCR Scan	BD439/441 BD440, BD442 BD439 BD441	PDF
Untitled Abstract: No abstract text available Text: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB1017 TO-220F ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic V cB O Symbol 80 V Collector Emitter Voltage V cE O 80 V Emitter Base Voltage	OCR Scan	KSD1408 KSB1017 O-220F	PDF
GE003 Abstract: No abstract text available Text: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 80 V Collector-Emitter Voltage V ceo 80 V Emitter-Base Voltage V ebo 5 V Collector Current	OCR Scan	KSD526 KSB596 GE003	PDF
bd177 Abstract: BD175 Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80 V BD175	OCR Scan	BD175/177/179 BD175 BD177 BD179	PDF
MMBTA06LT1 Abstract: mbta06 Text: MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage	Original	MBTA06LT1 500mA 225mW 100mA 100mA 100MHz 062in MMBTA06LT1 300uS mbta06	PDF
LB 122 transistor Abstract: LB 122 NPN TRANSISTOR Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120	OCR Scan	TIPI25/126/127 TIP120 TIP121 TIP122 LB 122 transistor LB 122 NPN TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR KSD1408 POWER AMPLIFIER APPLICATIONS • C om plem ent to KSB1017 TO-22QF ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollecto r Base Voltage V cbO 80 V C ollecto r E m itter Voltage V cE O 80 V E m itter Base Voltage	OCR Scan	KSD1408 KSB1017 O-22QF	PDF
Untitled Abstract: No abstract text available Text: KSD1944 NPN EPITAXIAL SILICON TRANSISTOR HIGHp POWER TRANSISTOR TO-22QF ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic VcBQ Symbol 80 V Collector Emitter Voltage VcEO 60 V Emitter Base Voltage V ebo 8 V Collector Current lc 3 A	OCR Scan	KSD1944 O-22QF	PDF
Untitled Abstract: No abstract text available Text: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : KSE180 Rating Unit 60 V 80 V 100 V : KSE180 40	OCR Scan	KSE180/181/182 KSE180 KSE181 KSE182 KSE180 KSE181	PDF
Untitled Abstract: No abstract text available Text: KSC1983 NPN EPITAXIAL SILICON TRANSISTOR HIGHp POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 80 V Collector-Emitter Voltage VcEO 60 V Emitter-Base Voltage V ebo 6 V Collector Current lc 3 A Base Current	OCR Scan	KSC1983	PDF
2N2891 Abstract: 2N2890 C22B Text: 2N 2890 2N 2891 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLANAR E P ITAXIAU X - LF large signal amplification high voltage A m plification B F grands signaux (haute tension) • Switching up to 1 A 80 V v CEO h21E(1A) \J 30 - 90	OCR Scan		PDF
2SC6033 Abstract: No abstract text available Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm Low collector-emitter saturation: VCE sat = 0.18 V (max) High-speed switching: tf = 38 ns (typ.) Characteristics Symbol Rating Unit VCBO 100 V VCEX 80 V VCEO 50 V VEBO 6 V DC IC 2.5	Original	2SC6033 2SC6033	PDF
BD239 Abstract: No abstract text available Text: BD239/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD240/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector-Emitter Voltage : BD239 Rating U nii 45 V 60 V : BD239B 80 V : BD239C	OCR Scan	BD239/A/B/C BD240/A/B/C BD239 BD239A BD239B BD239C BD239	PDF
2SD1817R Abstract: No abstract text available Text: ST 2SD1817R NPN Silicon Epitaxial Planar Transistor Motor drivers, hammer drivers and relay drivers applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage	Original	2SD1817R O-252 2SD1817R	PDF

Untitled Abstract: No abstract text available Text: ST 2SD1817Z NPN Silicon Epitaxial Planar Transistor Motor drivers, hammer drivers and relay drivers applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage	Original	2SD1817Z O-251	PDF
Untitled Abstract: No abstract text available Text: ST 2SD1817Z NPN Silicon Epitaxial Planar Transistor Motor drivers, hammer drivers and relay drivers applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage	Original	2SD1817Z O-251	PDF
Untitled Abstract: No abstract text available Text: MJE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS T O -126 ABSOLUTE MAXIMUM RATINGS C haracteristic Col lector-Base V oltage : MJE180 Sym bol Rating Unit 60 V 80 V 100 V	OCR Scan	MJE180/181/182 MJE180 MJE181 MJE182	PDF
2SD1418 Abstract: MA1060 Text: Transistors SMD Type Silicon NPN Epitaxial 2SD1418 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO	Original	2SD1418 2SD1418 MA1060	PDF
smd transistor EK Abstract: SMD MARKING el 2SD1001 SOT-89 marking ek Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1001 Features World standard miniature package:SOT-89. High collector-emitter voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage	Original	2SD1001 OT-89. smd transistor EK SMD MARKING el 2SD1001 SOT-89 marking ek	PDF
Untitled Abstract: No abstract text available Text: / T ransistors 2SD1733/2SD1733F5 2SD 1733 2SD 1733F5 NPN ' > V = i > b - 7 > v Z $ Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors • 1 raBGE, \ l i ± l l / Dimens'ons U n it: mm) tfe-5 0 V c e o — 80 V , lc = 1 A 2) Low V ce ( sat \| T i 5 O	OCR Scan	2SD1733/2SD1733F5 1733F5 2SB1181.	PDF
Untitled Abstract: No abstract text available Text: KSD1944 NPN EPITAXIAL SILICON TRANSISTOR HIGH ¥ POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic V cbO Symbol 80 V Collector Emitter Voltage VcEO 60 V Emitter Base Voltage V ebo 8 V Collector Current lc 3 A Collector Current Tc= 2 5 1	OCR Scan	KSD1944	PDF
2SD2151 Abstract: No abstract text available Text: Power Transistors 2SD2151 Silicon NPN epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Rating Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current	Original	2SD2151 2SD2151	PDF
PT10V Abstract: 2SD2151 DSA003720 DSA00372093 IC2016 Text: Power Transistors 2SD2151 Silicon NPN epitaxial planar type For power switching Unit: mm • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage	Original	2SD2151 PT10V 2SD2151 DSA003720 DSA00372093 IC2016	PDF
Untitled Abstract: No abstract text available Text: MPS651 MPS651 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Ratings 80 Units V V VCEO Collector-Emitter Voltage	Original	MPS651	PDF

80 V NPN EPITAXIAL SILICON TRANSISTOR Search Results

80 V NPN EPITAXIAL SILICON TRANSISTOR Result Highlights (5)

80 V NPN EPITAXIAL SILICON TRANSISTOR Datasheets Context Search

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GE003

bd177

MMBTA06LT1

LB 122 transistor

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2N2891

2SC6033

BD239

2SD1817R

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2SD1418

smd transistor EK

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2SD2151

PT10V

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