80n02
Abstract: on 80n02 GE SOT-223 MARKING 80-N02 80 N02 SOT23 5 MARKING N02 NTD80N02 NTD80N02T4 N021
Text: NTD80N02 Advance Information Power MOSFET 80 Amps, 24 Volts N–Channel DPAK http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 80 AMPERES 24 VOLTS RDS on = 5.0 mΩ (Typ.)
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NTD80N02
r14525
NTD80N02/D
80n02
on 80n02
GE SOT-223 MARKING
80-N02
80 N02
SOT23 5 MARKING N02
NTD80N02
NTD80N02T4
N021
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SKT24-04C
Abstract: TAG 203 350 C34D2 s4025l 2N688AS TYN688 c230d NS425 T17F400CCC SPS-425
Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VoRM on SCRs, VDRM >= 400 V Cont'd . . . .5 . . .10 . . . .15 . . 20 . . . .25 . . .30 . . .35 . .40 45 . . .50 . . 55 . -60 -65 .70 . .75 . . 80 . . 85 . . .90 . -95 . - T17F400BEL T17F400BEM
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T17F400BEL
T17F400BEM
T17F400CCB
T17F400CCC
T17F400CCL
T17F400CCM
T17F400CDB
T17F400CDC
T17F400CDL
T17F400CDM
SKT24-04C
TAG 203 350
C34D2
s4025l
2N688AS
TYN688
c230d
NS425
SPS-425
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80n02
Abstract: bergquist ge ntd80n02
Text: NTD80N02 Power MOSFET 80 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • Power Supplies Converters
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NTD80N02
NTD80N02/D
80n02
bergquist ge
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80n02
Abstract: NTD80N02G 369D NTD80N02 NTD80N02T4 NTD80N02T4G 80-N02 on 525 80n02
Text: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • Pb−Free Packages are Available Typical Applications
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NTD80N02
NTD80N02/D
80n02
NTD80N02G
369D
NTD80N02
NTD80N02T4
NTD80N02T4G
80-N02
on 525 80n02
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80n02
Abstract: 80 N02 80-N02 NTD80N02T4G on 525 80n02
Text: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • Pb−Free Package is Available Typical Applications
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NTD80N02
369AA
NTD80N02/D
80n02
80 N02
80-N02
NTD80N02T4G
on 525 80n02
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80n02g
Abstract: n02g 80n02 80 n02g mosfet 80 n02g 80-N02G mosfet on n02g ON n02g 80-N02 85 n02g
Text: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • These Devices are Pb−Free and are RoHS Compliant
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NTD80N02
NTD80N02/D
80n02g
n02g
80n02
80 n02g
mosfet 80 n02g
80-N02G
mosfet on n02g
ON n02g
80-N02
85 n02g
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BTW63-800RK
Abstract: S8025L 21RC80 BTW30-800 TAG14N800D BTW63-800RN M605-030.0M ACR25U08LG S2512NH BTW63-800R
Text: SILICON CONTROLLED RECTIFIERS Item Part Number Number Manufacturer VDRM IT Max A on SCRs, VDRM >= 800 V (Cont'd) . . -5 -10 . . -15 . . . .20 . . .25 . -30 -35 -40 45 -50 -55 -60 -65 70 -75 80 85 90 -95 - T17F800UDM T17F800UEB T17F800UEC T17F800UEL T17F800UEM
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T17F800UDM
T17F800UEB
T17F800UEC
T17F800UEL
T17F800UEM
SKT12F08DT
N023RH08
BTW30-800RM
BTW30-800RS
SKT24/08C
BTW63-800RK
S8025L
21RC80
BTW30-800
TAG14N800D
BTW63-800RN
M605-030.0M
ACR25U08LG
S2512NH
BTW63-800R
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n02g
Abstract: 80 n02g 80N02
Text: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • These Devices are Pb−Free and are RoHS Compliant
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NTD80N02
NTD80N02/D
n02g
80 n02g
80N02
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80n02
Abstract: 80 N02 n02 mosfet 80-N02 on 80n02 NTD80N02T4 ntd80n02
Text: NTD80N02 Power MOSFET 80 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Package May be Available. The G−Suffix Denotes a
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NTD80N02
369AA
1E-05
1E-04
1E-03
1E-02
1E-01
80n02
80 N02
n02 mosfet
80-N02
on 80n02
NTD80N02T4
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80n02
Abstract: NTD80N02
Text: NTD80N02 Power MOSFET 80 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Package May be Available. The G−Suffix Denotes a
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NTD80N02
369AA
NTD80N02/D
80n02
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td 1410
Abstract: ADSP-21160MKB-80 2B20 samtec connector TW serial connectors ADSP-21060 ADSP-21061 ADSP-21062 ADSP-21160
Text: DSP Microcomputer ADSP-21160 a Preliminary Technical Data SUMMARY • • • • • • • • • • DUAL-PORTED SRAM CO RE PROCESSO R TI MER 80 MHz 12.5 ns or 100 MHz (10 ns) core instruction rate Single-cycle instruction execution, including SIMD operations in both computational units
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ADSP-21160
400-ball
32-bit
ADSP-21160MKB-80
ADSP-21160MKB-100
400-lead
td 1410
ADSP-21160MKB-80
2B20
samtec connector TW serial connectors
ADSP-21060
ADSP-21061
ADSP-21062
ADSP-21160
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PDF
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MM5Z3V9
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS MM5Z2V4- MM5Z75 Green Products Technical Data Data Sheet N0206, Rev. A MM5Z2V4-MM5Z75 ZENER DIODES Features: Silicon planar power zener diodes Other tolerances are available upon request. This is a Pb − Free Device All SMC parts are traceable to the wafer lot
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MM5Z75
N0206,
MM5Z2V4-MM5Z75
OD-523
MM5Z3V9
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PDF
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B238B
Abstract: No abstract text available
Text: 642-*B ?A0:7;7/@A>3 ?75;/9 >39/E 4JFVWTJU ^ 9eW ^c_f_]nlc] mnl_hanb /\_nq_h ]icf [h^ ]ihn[]nm0 ^ Tola_ qcnbmn[h^ pifn[a_ oj ni <666WBD2 g_nm GDD Q[ln <> [h^ U_f_]il^c[ ^ Nch4 ]l_j[a_ cm 84;gg /\_nq_h ]icf [h^ ]ihn[]n02 Nch4 ]f_[l[h]_ cm 846gg /\_nq_h ]icf [h^ ]ihn[]n0
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666WBD2
846gg
96gWED0
B238B
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PDF
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Untitled
Abstract: No abstract text available
Text: 63CPQ080 63CPQ100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0208, Rev. A Green Products 63CPQ080/63CPQ100 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features:
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63CPQ080
63CPQ100
N0208,
63CPQ080/63CPQ100
O-247AD
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PDF
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|
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N0255WC
Abstract: n0255wc120 n0255wc160 N0255WC120-160
Text: WESTCODE Date:- 4 Oct, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N0255WC120 to N0255WC160 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 1200-1600 V VDSM Non-repetitive peak off-state voltage, (note 1)
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N0255WC120
N0255WC160
N0255WC160
N0255WC
N0255WC120-160
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PDF
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Untitled
Abstract: No abstract text available
Text: WESTCODE Date:- 4 Oct, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N0255WC120 to N0255WC160 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 1200-1600 V VDSM Non-repetitive peak off-state voltage, (note 1)
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N0255WC120
N0255WC160
N0255WC160
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS MUR440AX Technical Data Data Sheet N0267, Rev. - Green Products MUR440AX ULTRAFAST RECTIFIERS Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • • • •
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N0267,
MUR440AX
MUR440AX
DO-201AD
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PDF
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS MUR540AX Technical Data Data Sheet N0270, Rev. - Green Products MUR540AX ULTRAFAST PLASTIC RECTIFIER Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • • •
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MUR540AX
N0270,
MUR540AX
DO-201AD
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PDF
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS MUR560AX Technical Data Data Sheet N0271, Rev. - Green Products MUR560AX ULTRAFAST PLASTIC RECTIFIER Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • • •
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MUR560AX
N0271,
MUR560AX
DO-201AD
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PDF
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N0201
Abstract: No abstract text available
Text: Data Sheet N0201R R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES • Complements to N0201S. VCEO = 25 V IC DC = 1.0 A Miniature package SOT-23F (2SB798: Package variation of 3pPoMM) PRODUCT LINEUP Part Number
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N0201R
R07DS0718EJ0100
N0201S.
OT-23F
2SB798:
N0201R-T1-AT
3000p/reel
PVSF0003ZA-A
0126g
N0201
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N0201
Abstract: No abstract text available
Text: Data Sheet N0201R R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES • Complements to N0201S. VCEO = 25 V IC DC = 1.0 A Miniature package SOT-23F (2SB798: Package variation of 3pPoMM) PRODUCT LINEUP Part Number
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N0201R
R07DS0718EJ0100
N0201S.
OT-23F
2SB798:
N0201R-T1-AT
3000p/reel
OT-23F
PVSF0003ZA-A
0126g
N0201
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N029RH12
Abstract: 1653A jetion tn029r 1174A2 Westcode thyristor
Text: lilESTCODE SEMICONDUCTORS 3 TE D TTO ^S 0002141 5 I ÜJESB T -2. r - f 7 Technical WESTCODE SEMICONDUCTORS Publication TN029R Issue 2 July 1985 Convertor Grade Stud-Base Thyristor Type N029R 30 amperes average: up to 1500 volts V r r m Ratings Maximum values at 125°C Tj unless stated otherwise
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OCR Scan
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TN029R
N029R
1174A2S
DGOS144
TN029R
N029RH12
1653A
jetion
1174A2
Westcode thyristor
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PDF
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1653A
Abstract: N029RH12 tn029r N029RH
Text: Technical Publication WESTCODE $ SEMICONDUCTORS TN029R Issue 2 July 1985 Convertor Grade Stud-Base Thyristor Type N029R 30 am peres average: up to 1 500 volts V rrm Ratings Maximum values at 125°C Tj unless stated otherwise SYMBOL RATING CONDITIONS Average on-state current
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OCR Scan
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N029R
TN029R
1653A
N029RH12
tn029r
N029RH
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PDF
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N023RH12
Abstract: tN023 595a2 OOQ214Q N023RH hawk TN023R
Text: WESTCODE S EMI C O N D U CT O R S B'ìE » • TT DR RSS QOOSIB? 3 MlilESB Technical Publication WESTCODE 0 SEMICONDUCTORS TN023R Issue 2 July 1985 X — z Convertor Grade Stud-Base Thyristor Type N023R 2 3 a m p e r e s a v e r a g e : u p t o 1 5 0 0 v o l t s V rrm
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OCR Scan
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000S137
TN023R
N023R
595A2s
440A2s
2M785
N023RH12
tN023
595a2
OOQ214Q
N023RH
hawk
TN023R
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