Untitled
Abstract: No abstract text available
Text: FDMC89521L Dual N-Channel PowerTrench MOSFET 60 V, 8.2 A, 17 mΩ Features General Description This device includes two 60 V N-Channel MOSFETs in a dual Power 33 3 mm X 3 mm MLP package. The package is enhanced for exceptional thermal performance. Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.2 A
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FDMC89521L
FDMC89521L
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Untitled
Abstract: No abstract text available
Text: FDMC89521L Dual N-Channel PowerTrench MOSFET 60 V, 8.2 A, 17 mΩ Features General Description This device includes two 60 V N-Channel MOSFETs in a dual Power 33 3 mm X 3 mm MLP package. The package is enhanced for exceptional thermal performance. Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.2 A
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FDMC89521L
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Untitled
Abstract: No abstract text available
Text: LPB8040 Series http://www.abco.co.kr SMD Shielded Type ▼ Shape & Dimensions / Recommended Solder Land Pattern 8.2 Max. • 4R7 204 8.6 Max. 4.0 Max. ▼ Electrical Characteristics Ordering Code Inductance uH LPB8040T-1R0N Inductance TOL.(%) Test Freq.
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LPB8040
LPB8040T-1R0N
LPB8040T-1R5N
LPB8040T-2R2N
LPB8040T-3R6N
LPB8040T-4R7N
LPB8040T-5R2N
LPB8040T-6R8N
LPB8040T-10
LPB8040T-150M
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TMP50469CS
Abstract: 780a TMP50463CS
Text: ELECTRICAL CHARACTERISTICS: PART No. INDUCTANCE ±20% uH 100kHz,1.0V TMP50463CS 1.5 2.5 14.0A TMP50464CS 2.5 3.4 10.0A TMP50465CS 4.0 5.4 8.30A TMP50466CS 6.0 8.0 6.70A TMP50467CS 8.2 11.4 5.80A TMP50468CS 10.0 13.5 5.00A TMP50469CS 1.0 2.5 20.0A TMP50470CS
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100kHz
TMP50463CS
TMP50464CS
TMP50465CS
TMP50466CS
TMP50467CS
TMP50468CS
TMP50469CS
TMP50470CS
TMP50471CS
TMP50469CS
780a
TMP50463CS
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Untitled
Abstract: No abstract text available
Text: DOC. NO. 27CB-000034 PART NO. 2703-001084 Multilayer Chip Inductors For UHF Band MLR Series MIRi 608 TYPE SHAPES AND DIMENSIONS/RECOMMENDED PC BOARD PATTERN ELECTRICAL CHARACTERISTICS 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10 12 _ 15 _ 18 22 27 33 39
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27CB-000034
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PL1511T
Abstract: PL15-10 PL15-12 PL15-01 PL15-33 pl1520 PL-1536 pl1537 Vanguard Electronics
Text: POWER INDUCTORS LOW PROFILE SURFACE MOUNT TOROIDS PL15 SERIES Vanguard Part Number Inductance uH ±10% D.C. Resistance Ohms Max Rated D.C. mA PL15-01 PL15-02 PL15-03 PL15-04 PL15-05 5.0 5.6 6.8 8.2 10 0.030 0.033 0.036 0.039 0.044 2360 2160 2000 1860 1630
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PL15-01
PL15-02
PL15-03
PL15-04
PL15-05
PL15-06
PL15-07
PL15-08
PL15-09
PL15-10
PL1511T
PL15-10
PL15-12
PL15-01
PL15-33
pl1520
PL-1536
pl1537
Vanguard Electronics
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PL1411T
Abstract: PL1434T
Text: POWER INDUCTORS LOW PROFILE THRU-HOLE PL14-TH SERIES Vanguard Part Number Inductance D.C. uH Resistance ±10% Ohms Max Rated D.C. mA PL14-01TH PL14-02TH PL14-03TH PL14-04TH PL14-05TH 5.0 5.6 6.8 8.2 10 0.050 0.053 0.056 0.065 0.085 1100 1050 990 895 810 PL14-06TH
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PL14-TH
PL14-01TH
PL14-02TH
PL14-03TH
PL14-04TH
PL14-05TH
PL14-06TH
PL14-07TH
PL14-08TH
PL14-09TH
PL1411T
PL1434T
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PL-14-02
Abstract: PL14-10 Vanguard Electronics Company PL-14-07
Text: POWER INDUCTORS LOW PROFILE SURFACE MOUNT TOROIDS PL14 SERIES Vanguard Part Number Inductance uH ±10% D.C. Resistance Ohms Max Rated D.C. mA PL14-01 PL14-02 PL14-03 PL14-04 PL14-05 5.0 5.6 6.8 8.2 10 0.050 0.053 0.056 0.065 0.085 1100 1050 990 895 810 PL14-06
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PL14-01
PL14-02
PL14-03
PL14-04
PL14-05
PL14-06
PL14-07
PL14-08
PL14-09
PL14-10
PL-14-02
PL14-10
Vanguard Electronics Company
PL-14-07
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PCSLF1275
Abstract: smd code rc
Text: RoHS PCSLF1275 Power Chip Shielded Inductors Dimensions: Inches mm Allied Part Number Inductance (uH) Tolerance (%) Test Freq. KHz,0.5v DCR (Ω) ±20% IDC (A) Itemp (A) Max. PCSLF1275-1R2T-RC 1.2 30 1 .007 13 8.2 PCSLF1275-2R7T-RC 2.7 30 1 .009 10 7.0 PCSLF1275-3R9T-RC
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PCSLF1275
PCSLF1275-1R2T-RC
PCSLF1275-2R7T-RC
PCSLF1275-3R9T-RC
PCSLF1275-4R7T-RC
PCSLF1275-5R6T-RC
PCSLF1275-220M-RC
PCSLF1275-330M-RC
PCSLF1275-470M-RC
502BC
PCSLF1275
smd code rc
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Untitled
Abstract: No abstract text available
Text: FDMS86520L N-Channel PowerTrench MOSFET 60 V, 22 A, 8.2 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
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FDMS86520L
FDMS86520L
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Untitled
Abstract: No abstract text available
Text: FDMS86520L N-Channel PowerTrench MOSFET 60 V, 22 A, 8.2 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
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FDMS86520L
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CI23
Abstract: encoder ss55 AR10 AR11 AR12 KE5B256B1 KE5B256B1CFP QFP144 SHI20
Text: ADDRESS PROCESSOR KE5B256B1 64k-bit • 3-port type Ver. 1.2.1 Table of Contents Address Processor KE5B256B1 1. Features 8. CPU Port 1.1 1.2 1.3 Introduction Functional Overview Specifications 1.4 Register Names 2. Block Diagram 8.1 8.2 8.3 8.4 8.5 8.6 8.7
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KE5B256B1
64k-bit
CI23
encoder ss55
AR10
AR11
AR12
KE5B256B1
KE5B256B1CFP
QFP144
SHI20
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Untitled
Abstract: No abstract text available
Text: FDMS86520L N-Channel PowerTrench MOSFET 60 V, 22 A, 8.2 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
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FDMS86520L
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Untitled
Abstract: No abstract text available
Text: STANDARD SPECIFICATIONS * Measuring frequency L 1.0-8.2~ H(7.96MHz) * Tolerance of Inductance 7 I IO-82 /A H(2.52MHz) OF BDS TYPE SMD POWER INDUCTORS IOO-1,500~ IO-27l~H lo-220uH I 20% 10% 1) II IO-560 UH lo-27bH I 10% 20% I( II * This Indicates the value of current when the Inductance
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96MHz)
IO-82
52MHz)
IO-27l
lo-220uH
IO-560
lo-27bH
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2r2 DALE
Abstract: HP4342A 5940-N R47 DALE 34093 ISC-1812 LC130 HP4191A HP4192A IMC-1210-91
Text: ISC-1812 Vishay Dale Surface Mount, Molded, Shielded Inductors FEATURES STANDARD ELECTRICAL SPECIFICATIONS IND. µH 0.10 0.12 0.15 0.18 0.22 0.27 0.33 0.39 0.47 0.56 0.68 0.82 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 27.0
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ISC-1812
2r2 DALE
HP4342A
5940-N
R47 DALE
34093
ISC-1812
LC130
HP4191A
HP4192A
IMC-1210-91
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Untitled
Abstract: No abstract text available
Text: API_newlayouts_single:APIcatalog_newlayouts 8/26/10 10:20 AM Page 74 SERIES SDS850 FERRITE CORE & SLEEVE 2.2 ±30% 100 0.040 3.9 ±30% 100 0.055 5.6 ±30% 100 0.065 8.2 ±30% 100 0.080 10 ±20% 1 0.100 12 ±20% 1 0.120 15 ±20% 1 0.140 18 ±20% 1 0.160 22
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SDS850
SDS850R-392N
SDS850R-105M
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Untitled
Abstract: No abstract text available
Text: ISC-1812 Vishay Dale Wirewound, Surface Mount, Molded, Shielded Inductors FEATURES STANDARD ELECTRICAL SPECIFICATIONS IND. H 0.1 0.1 0.2 0.2 0.2 0.3 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 27.0 33.0
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ISC-1812
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IMC-2220
Abstract: No abstract text available
Text: IMC-2220 Vishay Dale Surface Mount, Molded Inductors FEATURES STANDARD ELECTRICAL SPECIFICATIONS TEST FREQ. L&Q MHz SELFRATED* RESONANT DCR DC FREQ. MIN. MAX. CURRENT (MHz) (Ohms) (mA) 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 ± 10 % ± 10 % ± 10 %
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IMC-2220
08-Apr-05
IMC-2220
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IMC-2220
Abstract: No abstract text available
Text: IMC-2220 Vishay Dale Surface Mount, Molded Inductors FEATURES STANDARD ELECTRICAL SPECIFICATIONS RATED* SELFDC RESONANT DCR FREQ. MIN. MAX. CURRENT mA (Ohms) (MHz) TOL. Q MIN. TEST FREQ. L&Q (MHz) 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 ± 10 % ± 10 %
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IMC-2220
12lectual
18-Jul-08
IMC-2220
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ISC-1812
Abstract: No abstract text available
Text: ISC-1812 Vishay Dale Wirewound, Surface Mount, Molded, Shielded Inductors FEATURES STANDARD ELECTRICAL SPECIFICATIONS IND. H 0.1 0.1 0.2 0.2 0.2 0.3 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 27.0 33.0
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ISC-1812
11-Mar-11
ISC-1812
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Untitled
Abstract: No abstract text available
Text: 5 6 4 APPROVED: DATE:_ TITLE: 0.716 [1 8.2] SPECIFICATIONS Material: Body: Brass, Nickel plated Ferrule: Brass, Nickel plated Contacts: Brass, Gold plated. Cable recommended: RG 213/U Insulator: Nylon, Color Yellow Coupling Nut: Brass, Nickel plated Electrical
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213/U
RF6-12-N-06-50
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2SC3660
Abstract: 2SC3660A NEM060
Text: CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR N EM080C69-28 OUTPUT POWER AND COLLECTOR EFFICIENC Y vs. F REQUENCY FEATURES HIGH POWER AND HIGH GAIN: Vcc = 28 V.CIass AB NEM080C69-28: PO = 49.6 dBm, GP = 5.6 dB TYP NEM060C69-28: PO = 50.2 dBm, GP = 8.2 dB (TYP)
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NEM080C69-28:
NEM060C69-28:
NEM060C69-28
NEM080C69-28
EM080C69-28
NEM080C69-28
NEM060C69-28,
2SC3660
2SC3660A
NEM060
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2SC3660A
Abstract: 2SC3660
Text: CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR NEM060C69-28 NEM080C69-28 NEM080C69-28 OUTPUT POWER AND COLLECTOR EFFICIENCY vs. FREQUENCY FEATURES HIGH POWER AND HIGH GAIN: Vcc = 28 V.CIass AB NEM080C69-28: PO = 49.6 dBm, GP = 5.6 dB TYP NEM060C69-28: PO = 50.2 dBm, GP = 8.2 dB (TYP)
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NEM080C69-28:
NEM060C69-28:
NEM060C69-28
NEM080C69-28
NEM080C69-28
L4E75E5
0Qt57fib
NEM060C69-28,
2SC3660A
2SC3660
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES 5-Bit Programmable Synchronous Controller for Pentium 111 Processors ADP3157 FEATURES Active V oltage Positioning w ith Gain and Offset A djustm ent Optim al Com pensation for Superior Load Transient Response VRM 8.2, VRM 8.3 and VRM 8.4 Com pliant
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ADP3157
SO-16
16-Lead
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