H1117 3.3v
Abstract: H11175 H1117-ADJ H1117 CD1117 1117 s adj 920 MARK A5 SOT89 H1117-1.8 Mark Y2 SOT MARKING KV SOT89
Text: HI-SINCERITY Spec. No. : IC200401 Issued Date : 2004.02.01 Revised Date : 2005.07.14 Page No. : 1/8 MICROELECTRONICS CORP. H1117 Series H1117 Series Pin Assignment 3-Lead Plastic SOT-89 Package Code: M Pin 1: ADJ/GND Pin 2: VOUT Pin 3: VIN 1.2A Low Dropout Positive Voltage Regulator
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IC200401
H1117
OT-89
OT-223
200oC
183oC
217oC
260oC
H1117 3.3v
H11175
H1117-ADJ
CD1117
1117 s adj 920
MARK A5 SOT89
H1117-1.8
Mark Y2 SOT
MARKING KV SOT89
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IR4426
Abstract: IR4426S IR4427 IR4427S IR4428 IR4428S MS-012AA DIP definition
Text: 2002-04-11 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-442-29 IR4426 GATE DRIVE 8 L DIP 73-442-45 IR4427 GATE DRIVE 8 L DIP 73-442-60 IR4428 GATE DRIVE 8 L DIP Data Sheet No. PD60177-C
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IR4426
IR4427
IR4428
PD60177-C
IR4426/IR4427/IR4428
IR4426)
IR4427)
IR4428)
IR44NFORMATION
IR4426S
IR4427S
IR4428S
MS-012AA
DIP definition
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AZ2025
Abstract: Stereo Audio amplifier stereo amplifier 2025 87030
Text: Preliminary Datasheet STEREO AUDIO AMPLIFIER AZ2025 General Description Features The AZ2025 is a monolithic integrated circuit which is intended for use as dual or bridge audio amplifier in portable cassette players and radios. • · · · · · The AZ2025 is available in DIP-16 package.
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AZ2025
DIP-16
DIP-16
AZ2025
Stereo Audio amplifier
stereo amplifier 2025
87030
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A018
Abstract: No abstract text available
Text: WS1M8-XXX HI-RELIABILITY PRODUCT 2x512Kx8 DUALITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55ns ■ Revolutionary, Center Power/Ground Pinout ■ Organized as two banks of 512Kx8 ■ Packaging: • 32 pin, Hermetic Ceramic DIP Package 300
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2x512Kx8
512Kx8
A018
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available
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WMS512K8-XXX
512Kx8
120ns
MIL-STD-883
A0-18
120ns
100ns
01HYX
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Untitled
Abstract: No abstract text available
Text: WS1M8-XXX HI-RELIABILITY PRODUCT 2x512Kx8 DUALITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55ns ■ Revolutionary, Center Power/Ground Pinout ■ Organized as two banks of 512Kx8 ■ Packaging: • 32 pin, Hermetic Ceramic DIP Package 300
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2x512Kx8
512Kx8
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2011ab2c
Abstract: TMC2011AB2C 2111A DI-74 2111AN TMC2011AR3C1 TDC1011 TMC2011 TMC2011A TMC2111
Text: Electronics Semiconductor Division TMC2011A/TMC2111A Variable-Length Shift Register Features • Available in 24-pin CERDIP and plastic DIP and 28-lead Plastic Leadless Chip Carrier • Low power CMOS • TMC2011A is a pin compatible replacement for the TDC1011 and TMC2011
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TMC2011A/TMC2111A
24-pin
28-lead
TMC2011A
TDC1011
TMC2011
TMC2211A
TMC2111
40MHz
TMC2011A:
2011ab2c
TMC2011AB2C
2111A
DI-74
2111AN
TMC2011AR3C1
TMC2011
TMC2111
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DPX205950DT-9126A1
Abstract: DPX205950DT-9108A1 DPX205850DT-4043A1 DPX205950DT-9026A1 DPX205950DT-9008A1 DPX205850DT
Text: Multilayer Diplexers For 2.4/5.0 GHz W-LAN DPX Series Type: DPX205950DT-9126A1 2.0x1.25×0.6mm max. DPX205950DT-9026A1 (2.0×1.25×0.6mm max.) DPX205850DT-4043A1 (2.0×1.25×0.95mm) DPX205950DT-9008A1 (2.0×1.25×0.95mm) DPX205950DT-9108A1 (2.0×1.25×0.95mm)
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DPX205950DT-9126A1
DPX205950DT-9026A1
DPX205850DT-4043A1
DPX205950DT-9008A1
DPX205950DT-9108A1
2002/95/EC,
DIM35
855dB
95GHz
DPX205950DT-9126A1
DPX205950DT-9108A1
DPX205850DT-4043A1
DPX205950DT-9026A1
DPX205950DT-9008A1
DPX205850DT
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Untitled
Abstract: No abstract text available
Text: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES EVOLUTIONARY PINOUT • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available 32 DIP 32 CSOJ DE A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8
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WMS512K8-XXX
512Kx8
120ns
MIL-STD-883
100ns
01HYX
02HYX
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c 4072
Abstract: WMS512K8-XXX
Text: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available
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WMS512K8-XXX
512Kx8
120ns
MIL-STD-883
01HYX
100ns
02HYX
03HYX
04HYX
c 4072
WMS512K8-XXX
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ODOMETER
Abstract: CS4161 CS4161YN8 CS8441 ODOMETER pulse CS-4161 FREE ENERGY coil DIAGRAM
Text: Back CS4161 85 mA Dual H-Bridge Odometer Driver with Divide by Select and UVLO http://onsemi.com DIP–8 N SUFFIX CASE 626 8 1 PIN CONNECTIONS AND MARKING DIAGRAM COILA+ COILA– SENSOR Features Undervoltage Lockout Cross–Conduction Prevention Logic Divide by 1 and Divide by 2 Modes
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CS4161
CS4161YN8
CS4161
r14525
CS4161/D
ODOMETER
CS4161YN8
CS8441
ODOMETER pulse
CS-4161
FREE ENERGY coil DIAGRAM
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Untitled
Abstract: No abstract text available
Text: CS4161 85 mA Dual H-Bridge Odometer Driver with Divide by Select and UVLO http://onsemi.com DIP–8 N SUFFIX CASE 626 8 1 PIN CONNECTIONS AND MARKING DIAGRAM COILA+ COILA– SENSOR Features Undervoltage Lockout Cross–Conduction Prevention Logic Divide by 1 and Divide by 2 Modes
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CS4161
CS4161YN8
CS4161
r14525
CS4161/D
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ODOMETER
Abstract: CS4161 CS4161YN8 CS8441 DIP850
Text: CS4161 85 mA Dual H-Bridge Odometer Driver with Divide by Select and UVLO http://onsemi.com DIP–8 N SUFFIX CASE 626 8 1 PIN CONNECTIONS AND MARKING DIAGRAM COILA+ COILA– SENSOR Features Undervoltage Lockout Cross–Conduction Prevention Logic Divide by 1 and Divide by 2 Modes
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CS4161
CS4161YN8
CS4161
r14525
CS4161/D
ODOMETER
CS4161YN8
CS8441
DIP850
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Untitled
Abstract: No abstract text available
Text: LINEAR INTEGRATED CIRCUITS NTE7035 Front View 8-Lead SIP, See Diag. 487 Module, 3 Output Voltage Regulator for VCR NTE7037 (Front View) 8-Lead SIP, See Diag. 487 Module, 2 Output Voltage Regulator for VCR B GND Q v in ( d c I GND I G ND I NTE7038 (Front View) 15-Lead SIP, See Diag. 545
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NTE7035
NTE7037
NTE7038
15-Lead
NTE7048
20-Lead
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a1 gnb
Abstract: No abstract text available
Text: % INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE8318 8-Bit Priority Encoder 16-Lead DIP, See Diag. 249 NTE8321 Dual 1-01-4 Decoder 16-Lead DIP, See Diag. 249 ¡B E n en TQ 20 ai Q A0 Q A1 g c D B2 B 3 3g GND B ai El g ì RBO Q Qb RBI H f lc g a
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NTE8318
16-Lead
NTE8321
NTE8546
NTE8556
NTE93L08
24-Lead
a1 gnb
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NTE1441
Abstract: NTE1447 NTE1443 NTE1448
Text: 14-LEAD DIP, SEE DIAG 247 16-LEAD DIP, SEE DIAG 248 BALANCE MODULATOR, Vcc=12V FM IF SYSTEM, Vcc=12V NTE1442 NTE1441 Front End— 1 . Front E n d - 2 Front End— 3 Gnd— 4 Mute Switch— 5 . A F Output— 6 AFC/vref— 7 Detector Trans— 8 16 15 14 13 12
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NTE1441
16-LEAD
NTE1442
560C2
14-LEAD
NTE1443
12Output--
19KHz
NTE1448
NTE14S0
NTE1447
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I-T2N2222
Abstract: 10 35L CAPacitor 2N2222 TRANSISTOR 10 35L DIODE REF195EP REF195 crossover circuits REF195FP REF195GP ad 620 using pressure measurement
Text: ANALOG DEVICES INC bSE D • GfllbflDQ 0 D 3 Ô T Û 7 PIN CONNECTIONS 8-Lead Narrow-Body SO S Suffix t p [T • | ] NC v+ [F 3 SHUTDOWN [7 GND [T REF-195 NC 1 ] VOUT | ] TP = NO CONNECT APPLICATIONS Portable Instrumentation Industrial Process Controllers
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REF-195*
REF-195
I-T2N2222
10 35L CAPacitor
2N2222 TRANSISTOR
10 35L DIODE
REF195EP
REF195
crossover circuits
REF195FP
REF195GP
ad 620 using pressure measurement
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Untitled
Abstract: No abstract text available
Text: TEXAS INSTR -CLOGIO d Ë I 0 ^ 1 7 2 3 OD74böt> 0 i ~ T-S2'G<? . SN74AS1821 10-BIT BUS IN TER FA C E FLIP-FLO PS WITH 3-STATE O UTPU TS APRIL 1 9 8 7 NT PACKAGE Center V c c and GND Configuration Provides Minimum Lead Inductance in High Current Switching Applications
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OD74b
SN74AS1821
10-BIT
AS821
0D74bflT
SDAS131
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a1 gnb
Abstract: NTE8370 NTE8318 NTE852 ex-or NTE960 NTE8328 ET 1108 NTE8556 NTE8374
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE8318 8 -B it Priority Encoder 16-Lead DIP, See Diag. 249 sH 0 v cc sH Q GS 7Q 0 3 * B g ET 3 B3 QS A2CT c e B H R B lS a B B D A0 3 Q a Q Reg 1 D1 Reg 2. DO Q Reg 1 DO Reg 2 CP Q Q Reg 1 CP GND p g CP Comp
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NTE8318
NTE8370
16-Lead
NTE8321
NTE8328
NTE8374
Q7g52
a1 gnb
NTE8318
NTE852
ex-or
NTE960
ET 1108
NTE8556
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transistor BC 247
Abstract: BC 247 b transistor
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445
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NTE74426
14-Lead
NTE74LS445
16-Lead
NTE74S474,
24-Lead
NTE74S475
4096-Bit
NTE74HC574,
20-Lead
transistor BC 247
BC 247 b transistor
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74694
Abstract: 74694 IC
Text: IB 8961723 T tr V A c TKKTR . 91D 74694 D ^s x ä - ? o ûTtil7E3 0074t,T4 0 SN74AS1841 10-BIT BUS INTERFACE D TYPE LATCHES WITH 3-STATE OUTPUTS TEXAS INSTR {LOGIC! dË | APRIL 1 9 8 7 • • • Center V q c and GND Configuration Provides Minimum Lead Inductance in High
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0074t
SN74AS1841
10-BIT
AS841
74694
74694 IC
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74690
Abstract: 74692 8Q21
Text: TFyAi TNSTR LOGIC T EX A S I N S T R { L O G I C ! 1 1 91D 74690 D T-5£-0? D E | 0 ^ 1 7 2 3 DD74h1G 5 1 ~ SN 74 A S 18 2 3 9-BIT BUS INTER FA CE FLIP-FLUPS WITH 3-STATE OUTPUTS APRIL 1 9 8 7 NT PACKAGE Center V q c ar|d GND Configuration Provides Minimum Lead Inductance in High
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DD74h1G
AS823
SN74AS1823
0074bT3
SDAS126
74690
74692
8Q21
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Untitled
Abstract: No abstract text available
Text: HS-26CT31RH S MAfSSf? Radiation Hardened Quad Differential Line Driver March1995 Features Pinouts HS1-26CT31RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTUNE D2, CONFIGURATION C TOP VIEW • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si • Latchup Free
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HS-26CT31RH
Mrch1995
HS1-26CT31RH
RS-422
038mm)
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Untitled
Abstract: No abstract text available
Text: HS-26CT31RH Semiconductor R a d ia tio n H a rd e n e d March 1995 Q u a d D ifferential L in e D river Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26CT31RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTLINE D2, CONFIGURATION C TOP VIEW - Total Dose Up to 300K RAD Si
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HS-26CT31RH
HS1-26CT31RH
RS-422
038mm)
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