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    8-BIT SCHOTTKY DIODE Search Results

    8-BIT SCHOTTKY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    8-BIT SCHOTTKY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    74F1056

    Abstract: 74F1056SC M16A 8-bit schottky diode
    Text: Revised August 1999 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The 74F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed


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    74F1056 74F1056 74F1056SC 16-Lead MS-012, 74F1056SC M16A 8-bit schottky diode PDF

    74F1056

    Abstract: 74F1056SC C1995 M16A b50 diode
    Text: 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines This device is designed to suppress negative transients caused by line reflections switching


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    74F1056 F1056 74F1056SC 16-Lead 74F1056 74F1056SC C1995 M16A b50 diode PDF

    74F1056

    Abstract: M16A 74F1056SC
    Text: 74F1056 8-Bit Schottky Barrier Diode Array General Description The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress negative transients caused by line reflections, switching


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    74F1056 F1056 74F1056SC 16-Lead 74F1056 M16A 74F1056SC PDF

    S1 DIODE schottky

    Abstract: SN74F1056
    Text: SN74F1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDFS085 – AUGUST 1992 • • • SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems D01


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    SN74F1056 SDFS085 SN74F1056 S1 DIODE schottky PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74F1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDFS085A – AUGUST 1992 – REVISED JULY 1997 D D D SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems


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    SN74F1056 SDFS085A SN74F1056 PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 D D D SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems


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    SN74S1056 SDLS019B PDF

    SDLS019

    Abstract: No abstract text available
    Text: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 D D D SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems


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    SN74S1056 SDLS019B SDLS019 PDF

    948F

    Abstract: MC74VHCT259A MC74VHCT259AD MC74VHCT259ADR2 MC74VHCT259ADT VHC259 VHCT259A
    Text: MC74VHCT259A 8-Bit Addressable Latch/1-of-8 Decoder CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHCT259 is an 8–bit Addressable Latch fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


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    MC74VHCT259A MC74VHCT259 VHC259 r14525 MC74VHCT259A/D 948F MC74VHCT259A MC74VHCT259AD MC74VHCT259ADR2 MC74VHCT259ADT VHCT259A PDF

    VHCT259A

    Abstract: No abstract text available
    Text: MC74VHCT259A 8-Bit Addressable Latch/1-of-8 Decoder CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHCT259 is an 8–bit Addressable Latch fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


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    MC74VHCT259A MC74VHCT259 VHC259 VHCT259A PDF

    Untitled

    Abstract: No abstract text available
    Text: MC74VHCT259A 8-Bit Addressable Latch/1-of-8 Decoder CMOS Logic Level Shifter with LSTTL−Compatible Inputs http://onsemi.com The MC74VHCT259 is an 8−bit Addressable Latch fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


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    MC74VHCT259A MC74VHCT259 VHC259 MC74VHCT259A/D PDF

    AN 7112E

    Abstract: mb7111e MB7112L m87112 MB712 1021T
    Text: FUJITSU April 1990 Edition 3 .0 DATASHEET " MB7111E/H/7112E/H/Y/7111L/7112L PROGRAMMABLE SCHOTTKY 256-BIT READ ONL Y MEMORY SCHOTTKY 256-BIT DEAP PROM 32 WORDS x 8 BITS The Fujitsu MB7111 and MB7112 are high speed Schottky TTL electrically field programmable


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    MB7111E/H/7112E/H/Y/7111L/7112L SCHOTTKY256-BIT 256-BIT MB7111 MB7112 AN 7112E mb7111e MB7112L m87112 MB712 1021T PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY _SDLS019B- APRIL 1990 - REVISED JULY 1997 Designed to Reduce Reflection Noise SC PACKAGE TOP VIEW Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems


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    SN74S1056 SDLS019B- PDF

    MB71A38

    Abstract: No abstract text available
    Text: FU JITSU PROGRAMMABLE SCHOTTKY 1 63 84 -B IT READ ONLY MEMORY MB71 A 3 8 -2 5 M B 7 1 A 3 8 -3 5 August 1988 Edition 2.0 SCHOTTKY 16384-BIT DEAP PROM 2048 WORDS X 8 BITS The Fujitsu MB71A38 is high speed schottky TTL electrically field programmable read


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    16384-BIT MB71A38 MB71A38-25 MB71A38-35 24-LEA PDF

    diode D07-15 54

    Abstract: No abstract text available
    Text: SN74F1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDFS085 - AUGUST 1992 • Designed to Reduce Reflection Noise • Repetitive Peak Forward Current. . . 300 mA • 8-Bit Array Structure Suited for Bus-Oriented Systems SC PACKAGE TOP VIEW D01 D02


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    SN74F1056 SDFS085 diode D07-15 54 PDF

    Untitled

    Abstract: No abstract text available
    Text: „ . Revised A ugust 1999 s e m ic o n d u c to r 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The 74F1056 is an 8-bit Schottky b arrier diode array designed to be em ployed as term ination on the inputs to m em ory bus lines or C LO C K lines. This device is designed


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    74F1056 74F1056 74F1056SC PDF

    Untitled

    Abstract: No abstract text available
    Text: November 1990 Edition 3.0 FUJITSU DATA SHEET MB7117E/H/7118E/H/7117L/7118L PROGRAMMABLE SCHOTTKY2048 READ ONLY MEMORY SCHOTTKY 2048-BIT DEAP PROM 256 WORDS x 8 BITS The Fujitsu MB7117 and MB7118 are high speed schottky TTL electrically field programmable


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    MB7117E/H/7118E/H/7117L/7118L SCHOTTKY2048 2048-BIT MB7117 MB7118 PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R -n 74F1056 8-Bit S chottky B arrier Diode A rray General Description The ’ F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress


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    74F1056 F1056 74F1056SC PDF

    7144 transistor

    Abstract: Fujitsu proms 7144Y
    Text: FU JITSU Bipolar Memories • MB7143E/H, MB7144E/H/Y Programmable Schottky 65,536-Bit Read Only Memory 8,192 Words x 8-Bits Description The Fujitsu MB7143 (open collector) and MB7144 (three-state) are high-speed Schottky TTL electrically field programmable read-only


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    MB7143E/H, MB7144E/H/Y 536-Bit MB7143 MB7144 MB7143 MB7144, MB7143E/H MB7144E/H/Y 24-Lead 7144 transistor Fujitsu proms 7144Y PDF

    Untitled

    Abstract: No abstract text available
    Text: Attenuators • Fixed and Digital • GaAs, PIN Diode, & Schottky Diode Technology • RF Relay • Thin Film MIC Technology 138 • Solid State Connectorized • 1 Bit Through 8 Bit Attenuators wtih 0.1 dB LSB’s Through 127 dB Range • Full Military Screening Available


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    DC-3000 DAT15015-X DAT15073 DA0879 DAT71987 DAT76191 DAT76199 DAT86198 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MB MB MB MB PROGRAMMABLE SCHOTTKY 2048 READ ONLY MEMORY 7117E/H 7118E/H 7117L 7118L June 1987 Edition 2.0 SCHOTTKY 2048 BIT DEAP PROM 256 WORDS X 8 BITS The Fujitsu MB 7117 and MB 7118 are high speed sch ottky T T L e lectrically fie ld programmable read only memories organized as 256 words by 8-bits.


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    7117E/H 7118E/H 7117L 7118L 20-LEAD FPT-20P-M02) 20006S -2S01B35I PDF

    MB7132E

    Abstract: b7131 mb7132 LSK Series MB7132Y
    Text: FUJITSU PROGRAMMABLE SCHOTTKY 8192-BIT READ ONLY MEMORY M B7131E/H/L M B7132E/H/Y/L MB7131E-SK/H-SK/L-SK M B7132E-SK/H -SK/Y-SK/L-SK I January 19B8 E d itio n 2.0 SCHOTTKY 8192-BIT DEAP PROM 1024 WORDS X 8 BITS The Fujitsu MB 7131 and MB 7132 are high speed sch ottky T T L electrically


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    8192-BIT B7131E/H/L B7132E/H/Y/L MB7131E-SK/H-SK/L-SK B7132E-SK/H B7132E/H B7131E-SK/H 132E-SK/H MB7132E b7131 mb7132 LSK Series MB7132Y PDF

    AN 7112E

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS F U JIT SU 53E D 3 7 417b2 PROGRAMMABL SCHOTTKY? 256!-B ll READ?ONÜfMEMOR’ QQDÖ737 MB MB MB MB ñ 7111E/H 7112E/H/Y 7111L 7112L March 1986 Edition 2.0 SCHOTTKY 256 BIT DEAP PROM 32 WORDS x 8 BITS The Fujitsu MB 7111 and MB 7112 are high speed Schottky T T L electrically


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    417b2 7111E/H 7112E/H/Y 7111L 7112L 20-PAD LCC-20C-F02) 20PLCS) C20004S-1C AN 7112E PDF

    MB7114E

    Abstract: MB7114l MB7114 7T13L
    Text: FU JITSU MB 7113E MB 7114E/H MB 7113L MB 7114L PROGRAMMABLE SCHOTTKY 1024-BIT READ ONLY MEMORY Aprii 1986 Edition 3.0 SCH OTTKY 1024-BIT DEAP PROM 256 WORDS x 4 BITS The Fujitsu M 8 7 1 1 3 and M B 7 1 1 4 are high speed Schottky T T L electrically field program m able read only memories organized as 256 words by 4 bits.


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    1024-BIT 7113E 7114E/H 7113L 7114L MB7114E MB7114l MB7114 7T13L PDF

    pnp 8 transistor array ttl

    Abstract: MB7130E MB7130H dis40
    Text: MB7130E MB7130H FUJITSU M IC R O E L E C T R O N IC S HIGH SPEED SCHOTTKY TTL 8192-BIT PROM DESCRIPTION The Fujitsu M B7130 is a high speed Schottky TTL electrically field programmable read only memory organized as 1024 words by 8-bits. W ith three-state outputs


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    8192-bit mb7130e mb7130h MB7130 MB7130, MB7130E: MB7130H: pnp 8 transistor array ttl MB7130H dis40 PDF