28F400BV-T
Abstract: No abstract text available
Text: INTEL PRODUCTS INTEL High Integration Boot Block 2-, 4- and 8-Mbit Family with SmartVoltage Technology • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2-, 4- and 8-Mbit x8 or ×8/×16 JEDEC-standard configuration Footprint upgradable from 2-Mbit through 8-Mbit
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SOIC Package 8-Pin Surface Mount
Abstract: No abstract text available
Text: IS25WD020/040 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - IS25WD020: 256K x 8 2 Mbit - IS25WD040: 512K x 8 (4 Mbit)
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IS25WD020/040
IS25WD020:
IS25WD040:
64KByte
IS25WD040-JNLE
IS25WD040-JBLE
IS25WD040-JVLE
IS25WD040-JKLE
IS25WD040-JNA*
SOIC Package 8-Pin Surface Mount
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208-MIL
Abstract: IS25WD040 IS25WD020 soic 208 mil
Text: IS25WD020/040 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - IS25WD020: 256K x 8 2 Mbit - IS25WD040: 512K x 8 (4 Mbit)
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IS25WD020/040
IS25WD020:
IS25WD040:
64KByte
208-mil
300mil
150mil
150-mil
IS25WD040
IS25WD020
soic 208 mil
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CHINGIS TECHNOLOGY
Abstract: No abstract text available
Text: Pm25WD020/040 FEATURES 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz DualOutput SPI Bus Interface • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - Pm25WD020: 256K x 8 2 Mbit - Pm25WD040: 512K x 8 (4 Mbit)
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Pm25WD020/040
Pm25WD020:
Pm25WD040:
64KByte
30MHz
CHINGIS TECHNOLOGY
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Untitled
Abstract: No abstract text available
Text: IS25WD020/040 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - IS25WD020: 256K x 8 2 Mbit - IS25WD040: 512K x 8 (4 Mbit)
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IS25WD020/040
IS25WD020:
IS25WD040:
64KByte
IS25WD040-JNLE
IS25WD040-JBLE
IS25WD040-JVLE
IS25WD040-JKLE
IS25WD040-JNLA*
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Untitled
Abstract: No abstract text available
Text: Pm25WD020/040 FEATURES 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz DualOutput SPI Bus Interface • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - Pm25WD020: 256K x 8 2 Mbit - Pm25WD040: 512K x 8 (4 Mbit)
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Pm25WD020/040
Pm25WD020:
Pm25WD040:
64KByte
30MHz
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Untitled
Abstract: No abstract text available
Text: Pm25WD020/040 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz DualOutput SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - Pm25WD020: 256K x 8 2 Mbit - Pm25WD040: 512K x 8 (4 Mbit)
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Pm25WD020/040
Pm25WD020:
Pm25WD040:
64KByte
30MHz
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PF38F2030
Abstract: 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0
Text: Intel Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit
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W18/W30
32-Mbit,
64-Mbit
32-Mbit
16-Mbit
64W18
64W30
64W30
RD38F2240WWZDQ0
PF38F2030
38F1030W0ZTQ0
PF38F2030W0YTQE
64W18
251407
PF38F1030W
PF38F
38F1030W0ZBQ0
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Untitled
Abstract: No abstract text available
Text: 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz Dual-Output SPI Bus Interface IS25WD020/040 FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - IS25WD020: 256K x 8 2 Mbit - IS25WD040: 512K x 8 (4 Mbit)
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IS25WD020/040
IS25WD020:
IS25WD040:
64KByte
208-mil
300mil
150mil
150-mil
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M27C160 equivalent
Abstract: PLCC32 socket PLCC32 through hole socket M27C160 M27C320 M27C322 M27C800 M27C801 M27V160 M27V800
Text: High Density UV and OTP EPROM A world leading range of high density UV and OTP EPROM, from 8 Mbit up to 32 Mbit, in plastic and ceramic windowed DIP, and plastic surface mount packages. Ideal for development, production and mask ROM replacement. 8, 16 and 32 Mbit EPROMs
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x8/x16
FLUVOTP/0998
286-CJ103
M27C160 equivalent
PLCC32 socket
PLCC32 through hole socket
M27C160
M27C320
M27C322
M27C800
M27C801
M27V160
M27V800
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Untitled
Abstract: No abstract text available
Text: IS25WD020/040 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - IS25WD020: 256K x 8 2 Mbit - IS25WD040: 512K x 8 (4 Mbit)
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IS25WD020/040
IS25WD020:
IS25WD040:
64KByte
IS25WD040-JNLE
IS25WD040-JBLE
IS25WD040-JVLE
IS25WD040-JKLE
IS25WD040-JNLA*
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Untitled
Abstract: No abstract text available
Text: IS25WD020/040 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - IS25WD020: 256K x 8 2 Mbit - IS25WD040: 512K x 8 (4 Mbit)
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IS25WD020/040
IS25WD020:
IS25WD040:
64KByte
Op25WD040-JNLE
IS25WD040-JBLE
IS25WD040-JVLE
IS25WD040-JKLE
IS25WD040-JNLA*
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Untitled
Abstract: No abstract text available
Text: Pm25WD020/040 FEATURES 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz DualOutput SPI Bus Interface • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - Pm25WD020: 256K x 8 2 Mbit - Pm25WD040: 512K x 8 (4 Mbit)
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Pm25WD020/040
Pm25WD020:
Pm25WD040:
64KByte
30MHz
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Untitled
Abstract: No abstract text available
Text: IS25WD020/040 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - IS25WD020: 256K x 8 2 Mbit - IS25WD040: 512K x 8 (4 Mbit)
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IS25WD020/040
IS25WD020:
IS25WD040:
64KByte
IS25WD040-JNLE
IS25WD040-JBLE
IS25WD040-JVLE
IS25WD040-JKLE
IS25WD040-JNLA*
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Untitled
Abstract: No abstract text available
Text: Intel Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit
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W18/W30
32-Mbit,
64-Mbit
32-Mbit
16-Mbit
RD38F2240WWYDQ0
RD38F2240WWYDQ1
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Untitled
Abstract: No abstract text available
Text: IS25WD020/040 2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 1.95 V • Memory Organization - IS25WD020: 256K x 8 2 Mbit - IS25WD040: 512K x 8 (4 Mbit)
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IS25WD020/040
IS25WD020:
IS25WD040:
64KByte
IS25WD040-JNLE
IS25WD040-JBLE
IS25WD040-JVLE
IS25WD040-JKLE
IS25WD040-JNLA*
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intel 28F400
Abstract: flash bios chip 28 pin intel 28F200 PA28F200 28F400
Text: MEMORY & STORAGE INTEL CORPORATION High Integration Boot Block 2-, 4- and 8-Mbit Family • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V SmartVoltage Technology 2-, 4- and 8-Mbit X8 or X8/X16 JEDEC-Standard Configuration Footprint Upgradable From 2 Mbit
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X8/X16
110ns
PA28F200
DO15/A1
28F200/28F400
28F200BV/28F400BV
44-lead
56-lead
intel 28F400
flash bios chip 28 pin
intel 28F200
PA28F200
28F400
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M29W008A
Abstract: QRFL9901 quality control procedure st
Text: QRFL9901 QUALIFICATION REPORT M29W008A T6X-U35: 8 Mbit x8 Single Supply Flash Memory INTRODUCTION The M29W008A is an 8 Mbit Single Supply (3V) Flash memory organized as 1 MByte of 8 bits each. It can be programmed and erased in-system or in standard EPROM programmers.
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QRFL9901
M29W008A
T6X-U35:
T6X-U35
TSOP40
QRFL9901
quality control procedure st
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QRFL9808
Abstract: quality control procedure st M29W008
Text: QRFL9808 QUALIFICATION REPORT M29W008 T6X-U25: 8 Mbit x8 Single Supply Flash Memory INTRODUCTION The M29W008 is an 8 Mbit Single Supply (3V) Flash memory organized as 1 MByte of 8 bits each. It can be programmed and erased in-system or in standard EPROM programmers.
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QRFL9808
M29W008
T6X-U25:
T6X-U25
TSOP40
QRFL9808
quality control procedure st
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M27C800
Abstract: PLCC44 Q15A FDIP42W
Text: M27C800 8 Mbit 1Mb x 8 or 512Kb x 16 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 70ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz
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M27C800
512Kb
26sec.
0020h
00B2h
M27C800
A0-A18
FDIP42W
PLCC44
Q15A
FDIP42W
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Untitled
Abstract: No abstract text available
Text: QRFL0001 QUALIFICATION REPORT M29F080A T6X-U35: 8 Mbit x8 Single Supply Flash Memory INTRODUCTION The M29F080A is an 8 Mbit Single Supply (5V) Flash memory with Uniform Block partitioning and organized as 1 MByte of 8 bits each. It can be programmed and erased in-system or in standard EPROM programmers.
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QRFL0001
M29F080A
T6X-U35:
T6X-U35
TSOP40
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64W18
Abstract: FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1
Text: Intel Wireless Flash Memory W18/W30 SCSP 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter
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W18/W30
64-Mbit
32-Mbit
16-Mbit
RD38F2240WWYDQE
64W30
RD38F2240WWZDQ0
RD38F2240WWYDQ0
RD38F2240WWDQ1
64W18
FLASH MEMORY 38F
W18 88
FLASH MEMORY 48F
64WQ
251407
PF38F2030W0YTQE
PF38F2030W0YTQ1
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TSOP40
Abstract: M29F080A M29W008A QRFL0001 STMICROELECTRONICS MSL PACKAGES
Text: QRFL0001 QUALIFICATION REPORT M29F080A T6X-U35: 8 Mbit x8 Single Supply Flash Memory INTRODUCTION The M29F080A is an 8 Mbit Single Supply (5V) Flash memory with Uniform Block partitioning and organized as 1 MByte of 8 bits each. It can be programmed and erased in-system or in standard EPROM programmers.
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QRFL0001
M29F080A
T6X-U35:
T6X-U35
TSOP40
TSOP40
M29W008A
QRFL0001
STMICROELECTRONICS MSL PACKAGES
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PF38F4050L0ZTQ0
Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit
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L18/L30
768-Mbit
256-Mbit
64-Mbit
16-Mbit
PF38F4050L0ZTQ0
PF38F3040
numonyx 106 ball
RD38F4455
PF48F4400L0
RD38F40
PF38F4050
numonyx 107-ball
Numonyx StrataFlash M18
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