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    2N2222A 331

    Abstract: 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a
    Text: N AflER PHILIPS/DISCRETE b'lE D bb53c131 QDEAQfibi T5D I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-18 metal envelope with the collector connected to the case. They are primar­ ily intended for high speed switching. The 2N2222 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.


    OCR Scan     		PDF bb53c 2N2222 2N2222A 2N2222 7Z85736 2N2222A 331 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a

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    Text: l l N AUER PHILIPS/DISCRETE b^E D bbS3^31 DDEflOai 34T APX 2 N i^ iy 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. They are primar­ ily intended for high speed switching. The 2N2219 is also suitable ford.c. and v.h.f./u.h.f. amplifiers.


    OCR Scan     		PDF 2N2219A 2N2219 2N2219 7Z85736 1N916.