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    Text: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 QOlSQb? fl • OLE D MSB11900Y T - 3 3-1ST PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor two transistor sections intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications at


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    PDF MSB11900Y 2x160 DD1S070 7Z21014