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    Text: • ^ £ 3 1 3 1 0Q5£bb7 7=12 * A P X N ANER PHILIPS/DISCRETE BSV52 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS • High-speed switching N-P-N transistor in a m icrominiature plastic envelope. It is intended fo r very high-speed saturated switching in thick and thin -film circuits.


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    PDF BSV52 bb53T31 7Z10107 7Z10I06 0025b75 7Z10I00 bbS3T31 D02Sb73