IRFS840
Abstract: IRFS841 IRFS842 IRFS843
Text: SAMSUNG ELECTRONICS INC L.7E » • 7Tb4142 001730^ £k>5 ■ SM6K N-CHANNEL POWER MOSFETS IRFS840/841/842/843 FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s Fast sw itch in g tim es R ug ged polysilicon g a te cell stru ctu re
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IRFS840/841/842/843
O-220F
IRFS840/841/842/843
IRFS840
IRFS841
IRFS842
IRFS843
IRFS84G
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Untitled
Abstract: No abstract text available
Text: SAflSUNG ELECTRONICS INC b7E ]> 7Tb414S GGlbfi?! THE «SMfiK CMOS EEPROM KM28C16/KM28C17 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C16/KM28C17: Commercial — KM28C16I/KM28C17I: Industrial
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7Tb414S
KM28C16/KM28C17
KM28C16/KM28C17:
KM28C16I/KM28C17I:
KM28C17)
32-byte
150ns
100/iAâ
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Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7Tb414e KM616513 DG17bE4 251 H S r i G K CMOS SRAM 32,768 WORD X 16 BIT FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 50mA(max.) (CMOS): 1 mA(max.)
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7Tb414e
KM616513
DG17bE4
KM616513
288-bit
400mil)
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: KM44C1012A-7 KM44C1012A-8 KM44C1012A-10 tnAC tcAc I rc
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7Tb414E
KM44C1012A
KM44C1012A-10
130ns
KM44C1012A-8
KM44C1012A-7
150ns
KM44C1012A
180ns
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Untitled
Abstract: No abstract text available
Text: SAM SUN G E L E C T R O N I C S 42E » INC B 7Tb41M2 001113b 3 H S M G K KM 23C 4000A CMOS MASK ROM ¡-v q c -B -fS 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4Q00A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using
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7Tb41M2
001113b
512Kx8)
KM23C4Q00A
120ns
50jjA
32-pin
23C4000A)
23C4000AG)
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E ]> B 7Tb4142 G0110Ô5 1 I IS 16 K PRELIMINARY CMOS EEPROM KM29C010 128K/8 Bit CMOS Electrically Erasable PROM FEATURES GENERATION DESCRIPTION • Fast Read Access Time: 120ns • Single 5 Voltage Supply • 128 Byte Page W rite Operation
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7Tb4142
G0110Ã
KM29C010
128K/8
120ns
b4142
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC h ?E KM416C157A ]> • 7Tb4142 0015^21 400 ■■ S M G K CMOS DRAM 256K x1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C157A is a CMOS high speed 262,144 b itx 1 6 Dynamic Random Access Memory. It's
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KM416C157A
7Tb4142
KM416C157A
0015R41
40-LEAD
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC DEE D I 7Tb4142 0 OUt. 155 T 'iü -0 7 Octal D-Type Flip-Flops with Clear KS54AHCT 0 7 0 K S74A H C T^/C * FEATURES DESCRIPTION • Eight positive-edge-triggered D-type flip-flops with single-rail outputs • Buffered common clock and asynchronous clear
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7Tb4142
KS54AHCT
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEM IC O N D U C T OR INC "üä 155 KS54AHCT KS74AHCT D E I 7Tb4145 DOQtDlt 1 | B 0 16 D - Dual 2-to-4 Line Decoders/Demultiplexers DESCRIPTION FEATURES • Typical applications: Dual 2-to-4 line decoder Dual 1-to-4 line demultiplexer 3-to-8 line decoder
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KS54AHCT
KS74AHCT
7Tb4145
7Tb414S
90-XO
14-Pin
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d 331 TRANSISTOR equivalent
Abstract: C 3311 transistor la 4142 74143
Text: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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7Tb4142
KSD5010
GQG77fe
d 331 TRANSISTOR equivalent
C 3311 transistor
la 4142
74143
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M I CO ND UC TO R INC DE ¡SRttS 6881689 D e J 7Tb4142 □00bE40 t f “ 8-Bit Identity Comparators FEATURES DESCRIPTION • Compares Two 8-BIt Words • Choice of Totem-pole ’688 and open-draln p8'8'9) outputs ('688 is identical to ’521)
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7Tb4142
00bE40
54174ALS
KS74AHCT:
KS54AHCT:
7Tb414S
90-XO
14-Pin
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KSA542
Abstract: KSC184
Text: SAMSUNG S EMI C O N D U C T O R INC 14£ KSÛ 104 | 7Tb41M2 OOObflM? | ]%T NPN EPITAXIAL SILICON TRANSISTOR AM FREQUENCY CONVERTER IF AMPLIFIER !-Ì TO-92 • Currant Gain Bandwidth Product tT=100MHz fiyp • Complement to KSA542 ABSOLUTE MAXIMUM RATINGS Ta=25°C)
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100MHz
KSA542
lc-100/iA,
KSC184
T-31-17
KSA542
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z24 mosfet
Abstract: IRF9Z25 IRF9Z20 IRF9Z22 IRF9Z24
Text: SAMSUNG ELECTRONICS INC b4E D inrv£.¿m¿.¿s IRF9Z20/Z22 • 7Tb4142 DülSSTH 4^5 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • SMGK TO-220 Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF9Z20/Z22
7Tb4142
122T4
IRF9Z20
IRF9Z24
IRF9Z22
IRF9Z25
z24 mosfet
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KM428C128
Abstract: No abstract text available
Text: SAMSUNG ELECTR ONI CS INC bHE D • 7Tb4142 GD13ÖSb ES7 I SMGK PRELIMINARY KM428C128 CMOS VIDEO RAM 12 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance Speed — -Parameter
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7Tb4142
KM428C128
100ns
125ns
150ns
180ns
40-PIN
40/44-PIN
KM428C128
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7Tb4142 KM23C4000B G GGlbTflE 70=5 CMOS MASK ROM 4M-Bit (512Kx&f CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using
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7Tb4142
KM23C4000B
512Kx
120ns
32-pin
KM23C4000B)
KM23C4000BG)
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CS1J
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC D S3E • 7Tb4142 0000572 KM6865P/KM6865LP 7 CMOS SRAM 8K x 8 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 35,45,55ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 100 pA (max.) Operating : 120 mA (max.)
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7Tb4142
KM6865P/KM6865LP
28-pin
KM6865P/LP
536-bit
CS1J
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u212
Abstract: IRFR122 u210 irfr210 U2-12
Text: tME T> SAMSUNG ELECTRONICS INC m 7Tb4142 GD1233S ñ3ñ « S n G K IR F R 2 1 0/212 IR F U 2 1 0/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R q s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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7Tb4142
DD1233S
IHFR210/212
IRFU210/212
IRFR210/U210
IRFR122/U212
IRFR210/21
IRFU210/212
IRFR212/U212
u212
IRFR122
u210
irfr210
U2-12
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEM ICON DUCTOR INC Tfi DEj|7Tb4142 DOOMSOH 0 | KS5806 p CMOS INTEGRATED CIRCUIT TEN NUMBER REPERTORY DIALER WITH PACIFIER TONE The KS5806 is a monolithic integrated ten-number repertory dialer manufactured using CMOS process. Thé circuit accepts keyboard inputs
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7Tb4142
KS5806
KS5806
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7Tb414S ÜG170cia 534 »SPICK KM23C16000 G CMOS MASK ROM 16M-Bit (2 M X 8/1M X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152x8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.)
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7Tb414S
G170c
KM23C16000
16M-Bit
152x8
150ns
42-pin,
44-pin,
23C16
KM23C
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS 42E INC D 7Tb4142 KMM536200GA DG1QS34 T • SMGK DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tRA C tC A C tR C KM M 5362000A- 7 70ns 20ns 130ns KM M 5362000A- 8
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7Tb4142
KMM536200GA
DG1QS34
130ns
362000A-
150ns
362000A
100ns
KMM5362Q00A
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power supply samsung tv
Abstract: ka2105 samsung tv
Text: SAMSUNG SEM ICOND UC TO R INC Tfl ^ KA2105 7Tb4142 D0041D b 3 ' - T ~ n ~ tn -< n LINEAR INTEGRATED CIRCUIT LIMITER AMPLIFIER AND DETECTOR FOR A TV SIF The KA2105 contains a limitingamplifler and an FM detector in a singlein-line plastic package. This device Is especially recommended as a
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7Tb4142
D0041D
KA2105
KA2105
PH100mV
400Hz
25KHz
100mV
25KHZ,
power supply samsung tv
samsung tv
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Samsung tv circuit diagram
Abstract: samsung s4 Samsung s3 ka2104 circuit diagram for auto on off samsung fbt
Text: SAMSUNG S E M I C 0 N 1 U C T 0 R I N C ^ I ^ T e )| 7Tb41M2 DOOM lD a t ' '' ' '~ KA2104 ; T-ni-oi-cn LINEAR INTEGRATED CIRCUIT AUTO POWER OFF AND SOUND MUTE SYSTEM FOR TV The KA2104 is a monolithic integrated circuit designed for noise sound muting and auto power off when channel without broadcasting selected
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7Tb41M2
KA2104
KA2104
28Vpeak)
Samsung tv circuit diagram
samsung s4
Samsung s3
circuit diagram for auto on off
samsung fbt
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p 605 transistor
Abstract: p 605 transistor equivalent
Text: IME 0 SA MS UN G SEMICONDUCTOR INC I 7Tb4142 0007375 1 I PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA76 T-29 -29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vch =50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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7Tb4142
MPSA76
625mW
MPSA75
p 605 transistor
p 605 transistor equivalent
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E T> • 7Tb414E DD17b05 ÜDH «SflGK KM68V257 CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35 ns (Max.) • Low Power Dissipation Standby (TTL) : 3mA (Max.)
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7Tb414E
DD17b05
KM68V257
KM68V257P/J-20:
KM68V257P/J-25:
KM68V257P/J-35:
KM68V257P:
28-pin
KM68V257J:
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