Untitled
Abstract: No abstract text available
Text: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM r ^ M T R O N Product Specification Features Architecture • 2KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes
|
OCR Scan
|
DM1M36SJ/DM1M32SJ
1Mbx36/1Mbx32
DM1M36SJ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM24C08FRAM SerialMemory $ j^ a M IR O N Product Preview Features I 8Kbit Nonvolatile Ferroelectric RAM Organized as 1,024 x 8 I Very Low Power CMOS Technology - IOOjiA Active Read or Write - IOjiA Standby Over Commercial Temperature Range I Reliable Thin Film Ferroelectric Technology
|
OCR Scan
|
FM24C08FRAMÂ
400KHz
X24C08
18-Pin
FM24C08
FM24C08
24C08
000032b
|
PDF
|
MC6805
Abstract: Ramtron FRAM Serial Memory
Text: F IM TRO N 2 M 5 1 6 F R A M S e r i a l M e m o r y Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range - 5|iA Standby Over Commercial Temperature Range
|
OCR Scan
|
FM25160FRAMÂ
16Kbit
-10Billion
25160-PS
00003bb
MC6805
Ramtron FRAM Serial Memory
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3 M T R O N DM2223/2233Sync Bursting EDRAM 512Kbx 8 EnhancedDynamic RAM Preliminary Datasheet Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random or Burst Writes Within
|
OCR Scan
|
DM2223/2233Sync
512Kbx
a2-78
DM2223/DM2233
DM2223T
|
PDF
|
PJ 0416 1v
Abstract: til 3010 1208FRAM 7S5SG15
Text: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric
|
OCR Scan
|
7S5SG15
1208FRAMÂ
096-Bit
512wx8b
10-Year
-150ns
300ns
250ns
24-Pin)
PJ 0416 1v
til 3010
1208FRAM
|
PDF
|
edram
Abstract: No abstract text available
Text: DM2203/2213EDRAM 512Kbx 8 Enhanced Dynamic RAM F ^ M T R O N Preliminary Datasheet Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes
|
OCR Scan
|
DM2203/2213EDRAM
512Kbx
256-byte
DM2203/DM2213
DM2203T
edram
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM1608S FRAM Memory r^ M 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification T R O N Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation
|
OCR Scan
|
FM1608S
536-Bit
180ns
320ns
1608S
28-Pin)
1608S
7SS501S
|
PDF
|
transistor A4t
Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
Text: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric
|
OCR Scan
|
755SD15
aGOQG71
1208FRAM®
096-Bit
-250ns
500ns
-44mW
124-Pin
7S5S015
transistor A4t
transistor A4t 45
transistor A4t 35
transistor A4t 16
|
PDF
|
xicor X24C04
Abstract: No abstract text available
Text: FM24C04 FRAM Serial Memory r ^ M T R O N Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ Very Low Power CMOS Technology - lOOpA Active Read or Write - 25pA Standby Over Commercial Temperature Range ■ Reliable Thin Film Ferroelectric Technology
|
OCR Scan
|
FM24C04
096-Bit
512wx
X24C04
FU24C04
24C04
75S5015
0GQD31A
xicor X24C04
|
PDF
|
pin configurations of 24c04 1
Abstract: 24C04 xicor FM24C04 LSBP
Text: FM24C04 FRAM Serial Memory F ^ M T R O IM Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ Very Low Power CMOS Technology - lOOpA Active Read or Write - 25]iA Standby Over Commercial Temperature Range
|
OCR Scan
|
FM24C04
096-Bit
512wx
24C04
75SS015
pin configurations of 24c04 1
24C04 xicor
LSBP
|
PDF
|
Ferroelectric RAM
Abstract: No abstract text available
Text: FM1208S FRAM Memory r ^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation
|
OCR Scan
|
FM1208S
096-Bit
200ns
400ns
24-Pin)
1208S
512x8
Ferroelectric RAM
|
PDF
|
t0dv
Abstract: No abstract text available
Text: E FM25160FRAM Serial Memory r ^ M T R O N Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x f ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range -5|iA Standby Over Commercial Temperature Range
|
OCR Scan
|
FM25160FRAMÂ
16Kbit
000Vo
FM25160
--------------------16K
t0dv
|
PDF
|
24C16
Abstract: FM24C16 24C16 equivalent
Text: FM24C16 FRAM SerialMemory r ^ M T R O N Product Preview Features I 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 I Very Low Power CMOS Technology - lOOpA Active Read or Write -25pA Standby Over Commercial Temperature Range I Reliable Thin Film Ferroelectric Technology
|
OCR Scan
|
FM24C16FRAMÂ
16Kbit
400KHz
XicorX24Cl6
FM24C16
24C16
7SS5015
24C16 equivalent
|
PDF
|