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    Untitled

    Abstract: No abstract text available
    Text: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM r ^ M T R O N Product Specification Features Architecture • 2KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


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    PDF DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM1M36SJ

    Untitled

    Abstract: No abstract text available
    Text: FM24C08FRAM SerialMemory $ j^ a M IR O N Product Preview Features I 8Kbit Nonvolatile Ferroelectric RAM Organized as 1,024 x 8 I Very Low Power CMOS Technology - IOOjiA Active Read or Write - IOjiA Standby Over Commercial Temperature Range I Reliable Thin Film Ferroelectric Technology


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    PDF FM24C08FRAMÂ 400KHz X24C08 18-Pin FM24C08 FM24C08 24C08 000032b

    MC6805

    Abstract: Ramtron FRAM Serial Memory
    Text: F IM TRO N 2 M 5 1 6 F R A M S e r i a l M e m o r y Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range - 5|iA Standby Over Commercial Temperature Range


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    PDF FM25160FRAMÂ 16Kbit -10Billion 25160-PS 00003bb MC6805 Ramtron FRAM Serial Memory

    Untitled

    Abstract: No abstract text available
    Text: 3 M T R O N DM2223/2233Sync Bursting EDRAM 512Kbx 8 EnhancedDynamic RAM Preliminary Datasheet Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random or Burst Writes Within


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    PDF DM2223/2233Sync 512Kbx a2-78 DM2223/DM2233 DM2223T

    PJ 0416 1v

    Abstract: til 3010 1208FRAM 7S5SG15
    Text: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric


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    PDF 7S5SG15 1208FRAMÂ 096-Bit 512wx8b 10-Year -150ns 300ns 250ns 24-Pin) PJ 0416 1v til 3010 1208FRAM

    edram

    Abstract: No abstract text available
    Text: DM2203/2213EDRAM 512Kbx 8 Enhanced Dynamic RAM F ^ M T R O N Preliminary Datasheet Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


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    PDF DM2203/2213EDRAM 512Kbx 256-byte DM2203/DM2213 DM2203T edram

    Untitled

    Abstract: No abstract text available
    Text: FM1608S FRAM Memory r^ M 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification T R O N Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation


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    PDF FM1608S 536-Bit 180ns 320ns 1608S 28-Pin) 1608S 7SS501S

    transistor A4t

    Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
    Text: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric


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    PDF 755SD15 aGOQG71 1208FRAM® 096-Bit -250ns 500ns -44mW 124-Pin 7S5S015 transistor A4t transistor A4t 45 transistor A4t 35 transistor A4t 16

    xicor X24C04

    Abstract: No abstract text available
    Text: FM24C04 FRAM Serial Memory r ^ M T R O N Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ Very Low Power CMOS Technology - lOOpA Active Read or Write - 25pA Standby Over Commercial Temperature Range ■ Reliable Thin Film Ferroelectric Technology


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    PDF FM24C04 096-Bit 512wx X24C04 FU24C04 24C04 75S5015 0GQD31A xicor X24C04

    pin configurations of 24c04 1

    Abstract: 24C04 xicor FM24C04 LSBP
    Text: FM24C04 FRAM Serial Memory F ^ M T R O IM Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ Very Low Power CMOS Technology - lOOpA Active Read or Write - 25]iA Standby Over Commercial Temperature Range


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    PDF FM24C04 096-Bit 512wx 24C04 75SS015 pin configurations of 24c04 1 24C04 xicor LSBP

    Ferroelectric RAM

    Abstract: No abstract text available
    Text: FM1208S FRAM Memory r ^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation


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    PDF FM1208S 096-Bit 200ns 400ns 24-Pin) 1208S 512x8 Ferroelectric RAM

    t0dv

    Abstract: No abstract text available
    Text: E FM25160FRAM Serial Memory r ^ M T R O N Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x f ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range -5|iA Standby Over Commercial Temperature Range


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    PDF FM25160FRAMÂ 16Kbit 000Vo FM25160 --------------------16K t0dv

    24C16

    Abstract: FM24C16 24C16 equivalent
    Text: FM24C16 FRAM SerialMemory r ^ M T R O N Product Preview Features I 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 I Very Low Power CMOS Technology - lOOpA Active Read or Write -25pA Standby Over Commercial Temperature Range I Reliable Thin Film Ferroelectric Technology


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    PDF FM24C16FRAMÂ 16Kbit 400KHz XicorX24Cl6 FM24C16 24C16 7SS5015 24C16 equivalent