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    transistor A4t

    Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
    Text: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric


    OCR Scan     		PDF 755SD15 aGOQG71 1208FRAM® 096-Bit -250ns 500ns -44mW 124-Pin 7S5S015 transistor A4t transistor A4t 45 transistor A4t 35 transistor A4t 16

    Untitled

    Abstract: No abstract text available
    Text: 2 4 19W FM 1208FRAM Memory r^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation with Two


    OCR Scan     		PDF 1208FRAMÂ 096-Bit 512wx 10-Year 150ns 300ns 250ns 500ns 24-Pin)