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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: b7E D SAMSUNG ELECTRONICS INC • 7Sb414E 001774E 156 KM79C86 CMOS SRAM 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 bit Synchronous Static Ran	OCR Scan	7Sb414E 001774E KM79C86 KM79C86 Q0177SQ KM79C86_ GD177S1	PDF
Untitled Abstract: No abstract text available Text: K M4 1 V 4 0 0 0 D J CMOS DRAM ELECTRONICS 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access	OCR Scan	KM41V4000DJ b414E 7Tb414E 003410b	PDF
KM29V32000TS Abstract: No abstract text available Text: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass	OCR Scan	KM29V32000TS 250us KM29V32000TS	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC fa7E D • 7^4142 KM44C1OOOBSL DDlSbfi? bSO ■ SMGK CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C1000BSL-6 tRAC tCAC tRC 60ns 15ns 110ns KM44C1000BSL-7 70ns 20ns	OCR Scan	KM44C1OOOBSL KM44C1000BSL-6 110ns KM44C1000BSL-7 130ns KM44C1000BSL-8 150ns cycles/256ms 20-LEAD 0Q157G5	PDF
Untitled Abstract: No abstract text available Text: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time	OCR Scan	256Kx16 KM416V256DJ 0G322tM QG322bS 7Tb4142 00322bfci	PDF