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    ZVN2206B

    Abstract: E195D plessey g-1
    Text: PLESSEY SE MICON D/ DI SC RE TE 7220533 PLESSEY TS DE I 7S E 0 S 33 DDGSbb^ 95D 05 6 6 9 SEMICOND/DISCRETE - [“ ^ N-channel enhancement mode vertical DMOS FET 3 ^ 7 ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown


    OCR Scan     		PDF ZVN2206 ZVN2206B* ZVN2206L DQ0Sb72 G-174 7S2D533 0005b73 G-175 ZVN2206B E195D plessey g-1

    s33 sot23

    Abstract: 05773
    Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY ^ 5 S E M I C O N D /DI S C R E T E P-channel enhancement mode vertical DMOS FET d F |7 E E 0 S 3 3 95D ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF ZVP1320 ZVP1320A /ZVP1320/ G-274 7S2D533 G-275 QBQS77H G-276 0QD5775 s33 sot23 05773