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    7N60 MOSFET Search Results

    7N60 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    7N60 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7n60f

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-F Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-F 7N60-F 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60t QW-R502-982. 7n60f

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TFt QW-R502-076.

    7n60b

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L QW-R502-076 7n60b

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-Q 7N60-Q 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-Tt QW-R502-983.

    7N60B

    Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60G QW-R502-076 7N60B 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60

    7N60m

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-M Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-M 7N60-M 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TFt QW-R502-996. 7N60m

    7n60b

    Abstract: tr 7n60b 74ATC MOSFET 7N60B D7N60 7N60B free 7N60 600v 4A mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60G QW-R502-076 7n60b tr 7n60b 74ATC MOSFET 7N60B D7N60 7N60B free 7N60 600v 4A mosfet

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-R Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-R 7N60-R 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-Tt QW-R502-984.

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TFt QW-R502-076.

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60L QW-R502-076

    7N60G-TF3-T

    Abstract: 7N60 7n60f 7n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-F/7N60-M/7N60-R /7N60-Q) QW-R502-076 7N60G-TF3-T 7N60 7n60f 7n60l

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TFt QW-R502-076.

    7N60G-x-TF1

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60-F/7N60-L/7N60-M/7N60-Q) QW-R502-076 7N60G-x-TF1

    7N60G-TF3-T

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-F/7N60-M/7N60-R /7N60-Q) QW-R502-076 7N60G-TF3-T

    7N60

    Abstract: OF 7N60 7n60 mosfet 7N60L 7N60L-TA3-T 7N60-TA3-T 7N60-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60L QW-R502-076 7N60 OF 7N60 7n60 mosfet 7N60L 7N60L-TA3-T 7N60-TA3-T 7N60-TF3-T

    7n60f

    Abstract: 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7n60f 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET

    7N60

    Abstract: 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7N60 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b

    7N60B

    Abstract: TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F O-220F1 O-262 QW-R502-076 7N60B TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60

    7N60

    Abstract: No abstract text available
    Text: 7N60 7 Amps， ，600Volts N-Channel MOSFET • Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF Amps600Volts ET7N60 O-220 O220F 7N60

    7N60

    Abstract: e-bike CYStech Electronics
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN7N60FP Spec. No. : C409FP Issued Date : 2008.09.02 Revised Date : 2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 1.2Ω ID : 7A Description The MTN7N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		PDF MTN7N60FP C409FP MTN7N60FP O-220FP UL94V-0 7N60 e-bike CYStech Electronics

    Untitled

    Abstract: No abstract text available
    Text: 3VD395600YL 3VD395600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD395600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;


    Original     		PDF 3VD395600YL 3VD395600YL O-220

    7N60

    Abstract: No abstract text available
    Text: 3VD395600YL 3VD395600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD395600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced 3 1


    Original     		PDF 3VD395600YL 3VD395600YL O-220 7N60

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


    Original     		PDF IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65

    7N60

    Abstract: OF 7N60 MIL-HDBK-263
    Text: E 7N60 VDSS=600V; ID=7.0A; RDS ON =1.2Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO­220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description Drain­to­Source Breakdown Voltage


    Original     		PDF 100nA 7N60 OF 7N60 MIL-HDBK-263