0535t
Abstract: No abstract text available
Text: PLESSEY S E M I C O N D /D I SCR ET E 7220533 PLESSEY TS S E M I C O N D /DI S C R E T E P-channel enhancement mode vertical D M O S FET DE § 7250533 D0D5757 2 95D 05757 D T ' J l v L S ZVP0535 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown
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D0D5757
ZVP0535
G-262
G-263
7E2D533
00DS7b2
G-264
G-266
0535t
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g229
Abstract: ZVN3306B
Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/ DISCRETE De J ? 2 S D S 3 3 95D 05727 N-channel enhancement mode vertical D M O S FET FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability
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ZVN3306A
ZVN3306B
ZVN3306F
0D0S727
G-233
7520S33
G-234
G-235
725DS33
DDD5734
g229
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ZVN0117TA
Abstract: No abstract text available
Text: PLESSEY SEMICOND/DISCRETE DE ^ 7220533 OGDSbGl 4 | 7220533 PLESSEY SEMICOND/DISCRETE ' 95D 05601 D 'r '35-2.s ' N-channel enhancement mode vertical D M O S FET ZV N 0 1 1 7 T A FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown
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0117T
7E20S33
ZVN0117TA
G-107
7E2D533
G-108
0S607
G-110
ZVN0117TA
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