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    7B1 TRANSISTOR Search Results

    7B1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    7B1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5b1 transistor

    Abstract: transistor 5B1 5B1 IR 6B2 transistor 40 TQFN 5x5 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ
    Text: 19-3577; Rev 1; 8/05 10/100/1000 Base-T Ethernet LAN Switch The MAX4890/MAX4891/MAX4892 high-speed analog switches meet the needs of 10/100/1000 Base-T applications. These devices switch the signals from two interface transformers and connect the signals to a single 10/100/1000 Base-T Ethernet PHY, simplifying


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    PDF MAX4890/MAX4891/MAX4892 MAX4891/MAX4892 MO220, T4866-1. 5b1 transistor transistor 5B1 5B1 IR 6B2 transistor 40 TQFN 5x5 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ

    RJ45 LED

    Abstract: 6B2 transistor A7188 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ MAX4892 MAX4892ETX
    Text: 19-3577; Rev 0; 2/05 10/100/1000 Base-T Ethernet LAN Switch The MAX4890/MAX4891/MAX4892 high-speed analog switches meet the needs of 10/100/1000 Base-T applications. These devices switch the signals from two interface transformers and connect the signals to a single 10/100/1000 Base-T Ethernet PHY, simplifying


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    PDF MAX4890/MAX4891/MAX4892 MAX4891/MAX4892 MO220, T4866-1. RJ45 LED 6B2 transistor A7188 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ MAX4892 MAX4892ETX

    PCI-Express 2.0 Pin

    Abstract: Nippon capacitors
    Text: PI2PCIE412-D Enhanced, 1.8V, PCI-Express Compliant, 4-Differential Channel, 2:1 Mux/DeMux Switch, w/ Single Enable Features Description • • • • • • • • Pericom Semiconductor’s PI2PCIE412-D is an 8 to 4 differential channel multiplexer/demultiplexer switch. This solution can


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    PDF PI2PCIE412-D -65dB 10MHz 42-contact, PS8788 42-Contact PCI-Express 2.0 Pin Nippon capacitors

    PI3L

    Abstract: PI3L500ZFE HP4195A PI3L500 PS8719
    Text: PI3L500 3.3V, 8-Channel, 2:1 Mux/DeMux Gigabit Ethernet LAN Switch with Single Enable Features Description • • • • • • • • • • • • Pericom Semiconductor’s PI3L series of switch circuits are produced using the Company’s advanced sub-micron CMOS technology,


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    PDF PI3L500 200ps 250MHz 250ps 56-contact PS8719 PI3L500ZFE PI3L PI3L500ZFE HP4195A PI3L500 PS8719

    Untitled

    Abstract: No abstract text available
    Text: PI3L500 3.3V, 8-Channel, 2:1, Mux/Demux Gigabit Ethernet LAN Switch with Single Enable Features Description • • • • • • • • • • • • Pericom Semiconductor’s PI3L series of switch circuits are produced using the Company’s advanced sub-micron CMOS


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    PDF PI3L500 200ps 250MHz 250ps 56-contact PI3L500 PS8719 PI3L500ZFE

    PI3L500ZFEX

    Abstract: No abstract text available
    Text: PI3L500 3.3V, 8-Channel, 2:1 Mux/DeMux Gigabit Ethernet LAN Switch with Single Enable Features Description • • • • • • • • • • • • Pericom Semiconductor’s PI3L series of switch circuits are produced using the Company’s advanced sub-micron CMOS technology,


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    PDF PI3L500 200ps 250MHz 250ps 56-contact PI3L500 PS8719A PI3L500ZFEX

    ts5a6442

    Abstract: TS40A41611 HDMI scaler TS40A41612 8B123 TS40A41641 laptop motherboard schematic military switch HDMI TO VGA MONITOR PINOUT HDMI to vga pinout
    Text: Analog Switch Guide LAN Network PCI USB Video 3Q 2008 2 Analog Switch Overview ➔ Introduction Today’s competitive environment creates a constant need for higher performance. One common method to optimize system performance involves the use of FET switches also referred to as


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    12B2 Diode

    Abstract: JESD22-A114E HBM 10A1 10B1 CBT16212 CBT16212DGG CBT16212DL JESD22-A114E JESD78 SSOP56
    Text: CBT16212 24-bit bus exchange switch with 12-bit output enables Rev. 02 — 3 November 2008 Product data sheet 1. General description The CBT16212 provides 24 bits of high-speed TTL-compatible bus switching or exchanging. The low ON resistance of the switch allows connections to be made with


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    PDF CBT16212 24-bit 12-bit CBT16212 JESD22-A114E JESD22-C101C 12B2 Diode JESD22-A114E HBM 10A1 10B1 CBT16212DGG CBT16212DL JESD78 SSOP56

    Untitled

    Abstract: No abstract text available
    Text: CBT16212 24-bit bus exchange switch with 12-bit output enables Rev. 02 — 3 November 2008 Product data sheet 1. General description The CBT16212 provides 24 bits of high-speed TTL-compatible bus switching or exchanging. The low ON resistance of the switch allows connections to be made with


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    PDF CBT16212 24-bit 12-bit CBT16212 JESD22-A114E JESD22ons

    10B1

    Abstract: 10B2 11B1 11B2 CBT16292 CBT16292DGG JESD22-A114E TSSOP56 SOT364-1
    Text: CBT16292 12-bit 1-of-2 multiplexer/demultiplexer Rev. 02 — 18 April 2008 Product data sheet 1. General description The CBT16292 is a 12-bit 1-of-2 high-speed TTL-compatible multiplexer/demultiplexer. The low ON resistance of the switch allows connections to be made with minimal


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    PDF CBT16292 12-bit CBT16292 10B1 10B2 11B1 11B2 CBT16292DGG JESD22-A114E TSSOP56 SOT364-1

    Untitled

    Abstract: No abstract text available
    Text: CBT16292 12-bit 1-of-2 multiplexer/demultiplexer Rev. 02 — 18 April 2008 Product data sheet 1. General description The CBT16292 is a 12-bit 1-of-2 high-speed TTL-compatible multiplexer/demultiplexer. The low ON resistance of the switch allows connections to be made with minimal


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    PDF CBT16292 12-bit CBT16292

    tlp732

    Abstract: tlp731 7B1 DIP TOSHIBA VDE E67349 VDE0884
    Text: TLP731,TLP732 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP731,TLP732 Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP731 and TLP732 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six


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    PDF TLP731 TLP732 TLP732 UL1577, E67349 EN60065: 7B1 DIP TOSHIBA VDE E67349 VDE0884

    TLP732

    Abstract: tlp7326
    Text: TLP731,TLP732 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP731,TLP732 Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP731 and TLP732 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six


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    PDF TLP731 TLP732 TLP732 UL1577, E67349 EN60065: tlp7326

    PS8178

    Abstract: V4413 240mil 11B1 11B2 12B1 13B1 13B2 15B1 15B2
    Text: PI3B16232 3.3V, Synchronous 16-Bit to 32-Bit FET Mux/Demux NanoSwitch Product Features Product Description • Near-Zero propagation delay. Pericom Semiconductor’s PI3B series of logic circuits are produced using the company's advanced submicron CMOS technology.


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    PDF PI3B16232 16-Bit 32-Bit 56-pin 240mil 300mil PI3B16232 PS8178 V4413 11B1 11B2 12B1 13B1 13B2 15B1 15B2

    3055 5C pnp transistor

    Abstract: n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905 2N2218
    Text: Switching transistors Continued Maximum ratings Characteristics ' t o t at 'c UC E O A V ^C E sat at V A *FE at / c and ^C E mA V 'o n ns CO (amb = + 4 W s Structure Fig. Nr. 5 Group Type 1q and 7B1: ; B2 mA mA mA 3; 1 2 N 708 NPN 9 0.32 0.2 15 S 0 .4


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    PDF 2N2218 2N2219 3B2DIN41872 3055 5C pnp transistor n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905

    VTT0942

    Abstract: VTT0943 VTT0944
    Text: 5 bE 3G30b0T D GGD1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg 7B1 • VCT V TT 0 9 4 2 , 43, 44 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 . 7 ) ■206 ( 5 .2 3 ) ’ .1 7 8 ( 4 . 5 2 ) 2 0 5 ( S .2 1 ) CASE 53


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    PDF 3G30b0T GGD1177 VTT0942, 100/iA 50/1A VTT0942 VTT0943 VTT0944

    BUY57

    Abstract: BUY58 Q62702 U110
    Text: BUY 57, BUY 58, BUY 73 NPN Triple-diffused silicon power transistors Preliminary data BUY 57, BUY 58 and BUY 73 are triple-diffused NF’ N silicon power transistors in a case sim. to 3 A 2 DIN 41872 TO-3 . The collector is electrically connected to the case. The transistors are particularly suitable for use as power switches for high


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    PDF Q62702- Q62702 Q62901 Q62901- Dimensio20V BUY57, BUY58 100mA BUY57 BUY58 U110

    Untitled

    Abstract: No abstract text available
    Text: 2SC D • 623SbG5 0 0 0 4 0 ^ 1 « S IE G PNP Silicon Planar Transistors 2 N 2906 2 N 2907 SIEMENS AKTIENGESELLSCHAF 2 N 2906 and 2 N 2907 are epitaxial PNP silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are particularly


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    PDF 623SbG5 62702-F137 62702-S Therma150

    BDV47

    Abstract: BDY 11 IC104 Leistungstransistor Spannungsregler bdy45 BDY46 BDY 46
    Text: » BDY 45 • BDY 46 • BDY 47 'W Silizium-NPN-Leistungstransistoren Silicon NPN Power Transistors Anwendungen: Spannungsregler, Inverter, getaktete Netzgeräte Applications: Voltage regulator, inverter, switching mode power supply Besondere Merkmale: • Hohe Sperrspannungen


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    PDF

    7060a

    Abstract: TOP3 package bup transistor
    Text: S IE M E N S BUP 101 SIRET Siemens Ring Emitter Transistor VCE = 1000 V lc =15 A • • • N channel B rea kdo w n-p roo f Package: TO-218 AA TOP-3 ') Type Ordering code BUP 101 C 6 7060-A 1000-A 2 Maximum Ratings at T{ = 25 °C, unless otherw ise specified.


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    PDF O-218 060-A 000-A 7060a TOP3 package bup transistor

    Untitled

    Abstract: No abstract text available
    Text: rz T SCS-THOMSON SD1439 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS > 860 MHz > COMMON EMITTER . GOLD METALLIZATION . CLASS A LINEAR OPERATION . Pout = 0.5 W MIN. WITH 9.5 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE BRANDING SD1439 TCC596


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    PDF SD1439 TCC596 SD1439

    BR 13005

    Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004
    Text: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


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    PDF Q02e14Sb T-33-U ooaci42b T-33-11 BR 13005 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004

    SS502

    Abstract: M502 Q60218-Y34 Q60218-Y58 BSY34 Scans-0010549
    Text: NPIM-HF-Transistoren für Schalteranw endungen B S Y 34 B SY 58 B S Y 34 und B S Y 58 sind doppeltdiffundierte epitaktische NPN-Silizium-HF-Transistoren in Planartechnik im Gehäuse 5 C3 DIN 41 873 T O -39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.


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    PDF Q60218-Y34 Q60218-Y58 100mA 100mA /c-150mA, SS502 M502 Q60218-Y34 Q60218-Y58 BSY34 Scans-0010549

    BDY13

    Abstract: Q62702-D378 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12
    Text: 2SC D • ÔSBSbQS QQQHMBB T H S I E G NPN Silicon Planar Transistors SIEMENS AKTIENÛESELLSCHAF BDW 25 BDY 12 ° - BDY 13 433 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.


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    PDF Q62702-D378 Q62702-D378-V4 Q6270 BDY13 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12