W39V040APZ
Abstract: winbond bios w39v040ap w39v040aqz
Text: W39V040A Data Sheet 512K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3
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W39V040A
W39V040APZ
winbond bios w39v040ap
w39v040aqz
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winbond bios w39v040ap
Abstract: W39V040AP w39v040
Text: Preliminary W39V040A 512K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE 1. GENERAL DESCRIPTION The W39V040A is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are
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W39V040A
12-volt
winbond bios w39v040ap
W39V040AP
w39v040
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winbond w39v040fap
Abstract: winbond w39v040fapz W39V040FAPZ w39v040fap FFBC0100 W39V040FA
Text: W39V040FA Data Sheet 512K x 8 CMOS FLASH MEMORY WITH FWH INTERFACE Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W39V040FA
W39V040FA
winbond w39v040fap
winbond w39v040fapz
W39V040FAPZ
w39v040fap
FFBC0100
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Untitled
Abstract: No abstract text available
Text: W39V040FA Data Sheet 512K x 8 CMOS FLASH MEMORY WITH FWH INTERFACE Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W39V040FA
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winbond w39v040fap
Abstract: FFBC0100 W39V040FA w39v040fap winbond w39v040fapz 76XXX
Text: W39V040FA Data Sheet 512K x 8 CMOS FLASH MEMORY WITH FWH INTERFACE Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W39V040FA
winbond w39v040fap
FFBC0100
w39v040fap
winbond w39v040fapz
76XXX
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AT49BV8192
Abstract: AT49BV8192T AT49LV8192 AT49LV8192T
Text: Features • Low Voltage Operation • • • • • • • • • – 2.7V Read – 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks
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AT49BV8192
AT49LV8192
AT49LV8192T-20RC
AT49LV8192T-20TC
AT49LV8192T-20RI
AT49LV8192T-20TI
AT49LV8192T-15RI
AT49LV8192T-15TI
AT49LV8192T-12RI
AT49LV8192T-12TI
AT49BV8192T
AT49LV8192T
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AT49F8192
Abstract: AT49F8192T 8192T
Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 90 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks
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AT49F8192
non49F8192-12TI
AT49F8192T-90TI
AT49F8192T-12TI
AT49F8192T-12RI
AT49F8192T-12TC
AT49F8192T-12RC
AT49F8192T-90RI
AT49F8192T-90TC
AT49F8192T-90RC
AT49F8192T
8192T
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TSOP8
Abstract: No abstract text available
Text: W39L040 512K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.
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W39L040
12-volt
TSOP8
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W39L040
Abstract: No abstract text available
Text: Preliminary W39L040 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are
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W39L040
W39L040
12-volt
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winbond w39v040fap
Abstract: w39v040fap 1110B FFBC0100 W39V040FA
Text: W39V040FA 512K x 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1. GENERAL DESCRIPTION The W39V040FA is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are
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W39V040FA
W39V040FA
12-volt
winbond w39v040fap
w39v040fap
1110B
FFBC0100
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AT49BV004
Abstract: AT49BV004T AT49BV4096A AT49BV4096AT ut000 4096A
Text: Features • • • • • • • • • • 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks
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AT49BV004
AT49BV4096A
AT49BV4096A-12RC
AT49BV4096A-12TC
44-Lead,
48-Lead,
/4096A
AT49BV004T
AT49BV4096AT
ut000
4096A
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AT49F4096A
Abstract: AT49F4096AT AT49F004 AT49F004T 4096A
Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time - 55 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks
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AT49F004
AT49F4096A
AT49F4096AT-90RI
AT49F4096AT-90TI
44-Lead,
48-Lead,
/4096A
AT49F4096AT
AT49F004T
4096A
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AT49F004
Abstract: AT49F004T AT49F4096A AT49F4096AT 4096A
Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time - 55 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks
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AT49F004
AT49F4096A
09/98/xM
AT49F004T
AT49F4096AT
4096A
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diagram for a 12v 250w power amplifier
Abstract: No abstract text available
Text: aw cover 2012_rear cover.qxd 6/13/2012 4:42 PM Page 1 Aeroflex / Weinschel Fixed Coaxial Attenuators Terminations & Loads Variable & Step Attenuators Power Dividers & Splitters Mechanical Phase Shifters DC Blocks Coaxial Adapters Microwave & RF Components & Subsystems
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W39V040APZ
Abstract: W39V040AT WINBOND W39v040ap w39v040aqz
Text: W39V040A Data Sheet 512K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE Table of Contents1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION . 3 FEATURES . 3
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W39V040A
W39V040APZ
W39V040AT
WINBOND W39v040ap
w39v040aqz
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0101B
Abstract: W39V040FAP winbond w39v040fap
Text: Preliminary W39V040FA 512K x 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1. GENERAL DESCRIPTION The W39V040FA is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are
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W39V040FA
12-volt
0101B
W39V040FAP
winbond w39v040fap
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W39V040FAPZ
Abstract: winbond w39v040fapz
Text: W39V040FA Data Sheet 512K x 8 CMOS FLASH MEMORY WITH FWH INTERFACE Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W39V040FA
W39V040FAPZ
winbond w39v040fapz
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W39V040AP
Abstract: Winbond LPC W39V040AP W39V040A
Text: W39V040A 512K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE 1. GENERAL DESCRIPTION The W39V040A is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are
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W39V040A
W39V040A
12-volt
W39V040AP
Winbond LPC W39V040AP
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AT49BV8192
Abstract: AT49BV8192A AT49BV8192T AT49LV8192 AT49LV8192T
Text: Features • Low Voltage Operation • • • • • • • • • – 2.7V Read – 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks
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AT49BV8192
AT49LV8192
0978D
12/98/xM
AT49BV8192A
AT49BV8192T
AT49LV8192T
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8192T
Abstract: No abstract text available
Text: Features * Single Voltage Operation - 5V Read - 5V Reprogramming * Fast Read Access Tim e - 90 ns * Internal Erase/Program Control * Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks
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OCR Scan
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PDF
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AT49F8192
technolog49F8192-90
AT49F8192-90TI
AT49F8192-90RI
AT49F8192-12TC
AT49F8192-12RC
AT49F8192-12TI
AT49F8192-12RI
AT49F8192T-90TC
AT49F8192T-90RC
8192T
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Untitled
Abstract: No abstract text available
Text: Features • Single Voltage Operation - 5V Read - 5V Reprogramming • Fast Read Access Tim e - 90 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K Bytes Boot Block with Programming Lockout - Two 8K Words (16K Bytes) Parameter Blocks
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OCR Scan
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PDF
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49F8192
AT49F8192
48-Lead,
44-Lead,
O-142
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Untitled
Abstract: No abstract text available
Text: Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase • Fast Read Access Time -120 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks
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OCR Scan
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PDF
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AT49BV8192
AT49LV8192
44-Lead,
48-Lead,
O-142
AT49BV/LV8192
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1690H
Abstract: 79XXX 4096A 3DXXX
Text: Features * * * * * * * * * * 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks - One 240K Words (480K bytes) Main Memory Array Block
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OCR Scan
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PDF
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AT49BV004
T49BV4096A
48-Lead,
MO-142
1690H
79XXX
4096A
3DXXX
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49F004
Abstract: 49f004t 4096A
Text: Features * Single Voltage Operation - 5V Read - 5V Programming * Fast Read Access Time - 55 ns * Internal Erase/Program Control * Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks
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OCR Scan
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PDF
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AT49F004
AT49F4096A
48-Lead,
MO-142
49F004
49f004t
4096A
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