79a diode
Abstract: diode 79A VPS05163 W301
Text: BAS 79A . BAS 79D Silicon Switching Diodes • Switching applications 4 • High breakdown voltage • Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration Package BAS 79A BAS 79A 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 BAS 79B BAS 79B
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VPS05163
EHA00005
OT-223
100ns,
EHN00021
Oct-07-1999
EHB00049
79a diode
diode 79A
VPS05163
W301
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79a diode
Abstract: marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89
Text: BAW 79A . BAW 79D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 • Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW 79A GE 1 = A1 2 = C1/2 3 = A2 SOT-89 BAW 79B GF 1 = A1 2 = C1/2
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VPS05162
EHA07003
OT-89
EHB00098
EHB00099
EHB00100
EHB00101
79a diode
marking A1 SOT89
MARKING a1 d sot 89
a2 sot-89
w351
Marking gg SOT89
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FDPF79N15
Abstract: FDP79N15
Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V
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FDP79N15
FDPF79N15
O-220
FDPF79N15
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FDP79N15
Abstract: FDPF79N15
Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V
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FDP79N15
FDPF79N15
O-220
FDPF79N15
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FDA79N15
Abstract: No abstract text available
Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)
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FDA79N15
FDA79N15
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79a diode
Abstract: 150V n-channel MOSFET D 3410 A FDA79N15
Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)
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FDA79N15
79a diode
150V n-channel MOSFET
D 3410 A
FDA79N15
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FDB2532
Abstract: FDI2532 FDP2532 AN-7517 RG101 TO262AB FDP2532 Mosfet
Text: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • rDS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 86nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2532
FDP2532
FDI2532
O-220opment.
FDI2532
AN-7517
RG101
TO262AB
FDP2532 Mosfet
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BAS79A
Abstract: BAS79B BAS79C BAS79D VPS05163 Marking 2c1
Text: BAS79A.BAS79D Silicon Switching Diodes Switching applications 4 High breakdown voltage Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration BAS79A BAS 79A 1 = A1 2=C1/2 3 = A2 BAS79B BAS 79B 1 = A1 2=C1/2 3 = A2 BAS79C BAS 79C
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BAS79A.
BAS79D
VPS05163
EHA00005
BAS79A
BAS79B
BAS79C
OT223
BAS79A
BAS79B
BAS79C
BAS79D
VPS05163
Marking 2c1
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Untitled
Abstract: No abstract text available
Text: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2532
FDP2532
FDI2532
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FDP2532
Abstract: FDB2532 marking 33a on semiconductor FDI2532 an7517
Text: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2532
FDP2532
FDI2532
marking 33a on semiconductor
FDI2532
an7517
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FDP2532 Mosfet
Abstract: No abstract text available
Text: FDB2532 / FDP2532 N-Channel UltraFET Trench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 86nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2532
FDP2532
FDP2532 Mosfet
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FDB2532
Abstract: No abstract text available
Text: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2532
FDP2532
FDI2532
O-220AB
O-263AB
O-262AB
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FDB2532
Abstract: IS10E nl109 RG101 DIODE N7 33a
Text: FDB2532_F085 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDB2532
O-263AB
IS10E
nl109
RG101
DIODE N7 33a
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marking A1 SOT89
Abstract: C1 SOT89 marking A2 SOT89 BAW79A BAW79B BAW79C BAW79D C123 Marking gg SOT89
Text: BAW79A.BAW79D Silicon Switching Diodes 1 Switching applications 2 High breakdown voltage 3 Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW79A GE 1 = A1 2 = C1/2 3 = A2 SOT89 BAW79B GF 1 = A1 2 = C1/2 3 = A2 SOT89
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BAW79A.
BAW79D
VPS05162
EHA07003
BAW79A
BAW79B
BAW79C
marking A1 SOT89
C1 SOT89
marking A2 SOT89
BAW79A
BAW79B
BAW79C
BAW79D
C123
Marking gg SOT89
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KU2307K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter.
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KU2307K
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KU054N03D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter.
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KU054N03D
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BAW78D
Abstract: BAW78 BAW79D tp200 marking GD
Text: BAW78./BAW79. Silicon Switching Diodes Switching applications High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW78.
/BAW79.
BAW78D
BAW79D
BAW78D,
BAW79D,
EHB00100
BAW78D
BAW78
BAW79D
tp200
marking GD
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LE 79A
Abstract: diode MARKING CODE 917 a915 BAS79D
Text: Silicon Switching Diodes BAS 79A. BAS 79D • Switching applications • High breakdown voltage • Common cathode T yp e Marking BAS 79A BAS79B O rdering code 12 -m m tape Package* BAS79A Q62702 - A914 SOT-223 BAS79B Q62702 - A915 SOT-223 BAS79C BAS79C
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BAS79B
BAS79C
BAS79D
BAS79A
Q62702
LE 79A
diode MARKING CODE 917
a915
BAS79D
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T0311
Abstract: No abstract text available
Text: 35E D m ÔS3b3B0 QOlbSlT 1 « S I P Silicon Switching Diodes X~ BAS 79A. BAS 79b _ SIEMENS/ SPCL-, SEMICONDS _ • Switching applications • High breakdown voltage • Com m on cathode T yp e M arking O rde ring c o d e 12-tnm tape
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12-tnm
Q62702
OT-223
BAS79B
BAS79D
T0311
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ba sot223
Abstract: ba sot89 DS410
Text: SILICON PLANAR DUAL HIGH VOLTAGE SWITCHING DIODES IN SOT89 AND SOT223 PACKAGES BAS79A-D SOT223 BAW79A-D (SOT89) PARTM ARKING DETAIL BA W 79A - GE B A W 7 9 B -G F BAW 79C - GG BAW 79D - GH BAS79A 1 BA S79A \ DEVICE TYPE IN B A S79A I FULL B A S79A I ABSOLUTE MAXIMUM RATINGS
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OT223
BAS79A
BAS79A-D
OT223)
BAW79A-D
BAW79A
BAW79B
BAS79B
ba sot223
ba sot89
DS410
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Untitled
Abstract: No abstract text available
Text: SIEMENS SITAC AC Switches B R T11 B R T12 BRT 13 AC switch w ith ou t zero-voltage d e te cto r con sistin g o f two e le ctrica lly insulated lateral pow er ICs w hich integrate a th y ris to r system, a photo d e tector and noise suppression at the o u tput and an IR GaAs diode at the input.
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0884-app
E52744)
BRT11
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAW 79 A BAW 79 D • For high-speed switching • High breakdown voltage • Common cathode Type Marking Ordering Code tape and reel BAW 79 A BAW 79 B BAW 79 C BAW 79 D GE GF GG GH Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733
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Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
OT-89
D12D434
fl235bÃ
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79AB
Abstract: 3G SOT223 MARKING
Text: SIEMENS Silicon Switching Diodes BAS 79 A . BAS 79 D • Switching applications • High breakdown voltage • Common cathode Type BAS BAS BAS BAS 79 79 79 79 A B C D Marking Ordering Code tape and reel BAS BAS BAS BAS Q62702-A914 Q62702-A915 Q62702-A916
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Q62702-A914
Q62702-A915
Q62702-A916
Q62702-A917
OT-223
EHB00051
79AB
3G SOT223 MARKING
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diode marking gg 2a
Abstract: BAW79C 79AB
Text: Silicon Switching Diodes • • • BAW 79 A BAW 79 D For high-speed switching High breakdown voltage Common cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape Package GE GF
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
diode marking gg 2a
BAW79C
79AB
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