LP 8029
Abstract: telefunken diodes SI 61 L TSHA4400 TSHA4401 photodetector
Text: TELEFUNKEN Semiconductors TSHA 440. GaAlAs Infrared Emitting Diode in ø 3 mm T–1 Package Description The TSHA 44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
PDF
|
D-74025
LP 8029
telefunken diodes SI 61 L
TSHA4400
TSHA4401
photodetector
|
TSHA440
Abstract: TSHA4400 TSHA4401
Text: TSHA440. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
PDF
|
TSHA440.
TSHA44.
D-74025
20-May-99
TSHA440
TSHA4400
TSHA4401
|
TSHA440
Abstract: TSHA4400 TSHA4401
Text: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
|
Original
|
PDF
|
TSHA440.
TSHA44.
D-74025
11-May-04
TSHA440
TSHA4400
TSHA4401
|
TSHA440
Abstract: No abstract text available
Text: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about
|
Original
|
PDF
|
TSHA440.
TSHA44.
D-74025
07-Apr-04
TSHA440
|
TSHA4400
Abstract: TSHA4401 TSHA440
Text: TSHA440. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
PDF
|
TSHA440.
TSHA44.
D-74025
20-May-99
TSHA4400
TSHA4401
TSHA440
|
Untitled
Abstract: No abstract text available
Text: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about
|
Original
|
PDF
|
TSHA440.
TSHA44.
D-74025
11-May-04
|
TSHA4401
Abstract: TSHA440 TSHA4400
Text: TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20°
|
Original
|
PDF
|
TSHA4400,
TSHA4401
2002/95/EC
2002/96/EC
TSHA440.
18-Jul-08
TSHA4401
TSHA440
TSHA4400
|
TSHA440
Abstract: TSHA4400 TSHA4401
Text: TSHA440. GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 %
|
Original
|
PDF
|
TSHA440.
TSHA44.
D-74025
15-Jul-96
TSHA440
TSHA4400
TSHA4401
|
Untitled
Abstract: No abstract text available
Text: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about
|
Original
|
PDF
|
TSHA440.
TSHA44.
D-74025
11-May-04
|
TSHA4400
Abstract: TSHA440 TSHA4401 LP880
Text: TSHA440. Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
PDF
|
TSHA440.
TSHA44.
D-74025
20-May-99
TSHA4400
TSHA440
TSHA4401
LP880
|
Untitled
Abstract: No abstract text available
Text: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
|
Original
|
PDF
|
TSHA440.
TSHA44.
08-Apr-05
|
TSHA440
Abstract: TSHA4400 TSHA4401
Text: TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20°
|
Original
|
PDF
|
TSHA4400,
TSHA4401
2002/95/EC
2002/96/EC
TSHA440.
11-Mar-11
TSHA440
TSHA4400
TSHA4401
|
Untitled
Abstract: No abstract text available
Text: TSHA440. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about
|
Original
|
PDF
|
TSHA440.
TSHA44.
18-Jul-08
|
TSHA440
Abstract: TSHA4400 TSHA4401
Text: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
|
Original
|
PDF
|
TSHA440.
TSHA44.
08-Apr-05
TSHA440
TSHA4400
TSHA4401
|
|
|
Untitled
Abstract: No abstract text available
Text: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability
|
Original
|
PDF
|
TSHA4400,
TSHA4401
2002/95/EC
2002/96/EC
TSHA440.
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability
|
Original
|
PDF
|
TSHA4400,
TSHA4401
2002/95/EC
2002/96/EC
TSHA440.
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: p = 875 nm High reliability
|
Original
|
PDF
|
TSHA4400,
TSHA4401
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability
|
Original
|
PDF
|
TSHA4400,
TSHA4401
2002/95/EC
2002/96/EC
TSHA440.
2002/95/EC.
2011/65/EU.
JS709A
|
7945BN
Abstract: 7943A 7945BR dc/PCF 7943 7943
Text: ANALOG DEVICES FEATURES 12-Bit M ultiplying DACs Guaranteed Specifications w ith +3.3 V /+ 5 V Supply 0.5 LSBs INL and DNL Low Power: 5 jiW typ Fast Interface 40 ns Strobe Pulsewidth (AD7943 40 ns W rite Pulsewidth (AD7945, AD7948) Low Glitch: 60 nV-s w ith A m plifier Connected
|
OCR Scan
|
PDF
|
12-Bit
AD7943)
AD7945,
AD7948)
AD843
AD7943/AD7945/AD7948
20-Lead
7945BN
7943A
7945BR
dc/PCF 7943
7943
|
AD7945
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES 12-Bit M ultiplying DACs Guaranteed Specifications w ith +3.3 V /+ 5 V Supply 0.5 LSBs INL and DNL Low Power: 5 jiW typ Fast Interface 40 ns Strobe Pulsewidth (AD7943 40 ns W rite Pulsewidth (AD7945, AD7948) Low Glitch: 60 nV-s w ith A m plifier Connected
|
OCR Scan
|
PDF
|
12-Bit
AD7943)
AD7945,
AD7948)
AD843
AD7943/AD7945/AD7948
20-Lead
RS-20)
AD7945
|
AD7945
Abstract: AD843 AD7543 AD7545 AD7548 AD7943 AD7943AN-B AD7948 OP07
Text: ► AN ALO G D E V IC E S +3.3 V/+5 V Multiplying 12-Bit DACs AD7943/AD7945/AD7948 FUNCTIONAL BLOCK DIAGRAMS FEATURES 12-B it M u ltip ly in g DACs G u a ra n te ed S p ec ifica tio n s w ith +3.3 V /+ 5 V S u p p ly 0.5 LSBs IN L and DIML L o w Pow er: 5 |xW ty p
|
OCR Scan
|
PDF
|
12-Bit
AD7943/AD7945/AD7948
AD7943)
AD7945,
AD7948)
AD843
AD7943,
AD7945
AD7948
AD7543
AD7545
AD7548
AD7943
AD7943AN-B
OP07
|
AKO 50 365
Abstract: rx 2 g 7943 COE
Text: A D V A N C E IN F O R M A T IO N Am7943 A Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed -1 9 V to -56.5 V battery operation ■ Current gain = 200 ■ Programmable loop detect threshold
|
OCR Scan
|
PDF
|
Am7943
TR-TSY-000057
EIA/TIA-464-A
5474A--
6853A
AKO 50 365
rx 2 g
7943 COE
|
ss 7941
Abstract: TSHA4400
Text: Tem ic TSHA440. S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 0 3 mm T -l Package Description The TSHA44.series are high efficiency infrared ermitting diodes in GaAlAs on GaAlAs technology, molde;d in a clear, untinted plastic package.
|
OCR Scan
|
PDF
|
TSHA440.
TSHA44.
D-74025
15-Jul-96
ss 7941
TSHA4400
|
aq843
Abstract: tmki AD7543 AD7545 AD7548 AD7943 AD7945 AD7948 JUI7945
Text: Q ANALOG DEVICES V/+5 V Multiplying . +3.3 V/+5V ' 12-Bit DACs AD7943/AD7945/AD7948 FEATURES „ > , , 12-Bit Multiplying DACs Guaranteed Specifications with +3.3 V/+5 V Supply 0.5 LSBs INL and DNL Low Power: 5 |iW typ Fast Interface 40 ns Strobe Pulse Width AD7943
|
OCR Scan
|
PDF
|
12-Bit
AD7943/AD7945/AD7948
AD79431
AD7945,
AD7948)
AQ843
AD7943,
AD7945
AD7948
aq843
tmki
AD7543
AD7545
AD7548
AD7943
JUI7945
|
