cha3667aqdg
Abstract: QFN-4x4 AN0017 7-18GHz SMD condensator
Text: CHA3667aQDG RoHs COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial
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CHA3667aQDG
7-20GHz
CHA3667aQDG
A3667A
7-20GHz
20dBm
24L-QFN4X4
DSCHA3667aQDG7296
QFN-4x4
AN0017
7-18GHz
SMD condensator
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EC-ECJ006
Abstract: EC-ECJ006-1105
Text: EC-ECJ006-1105 高信頼性ゴム系電波吸収体（SAシリーズ） SAシリーズはマイクロ波帯／ミリ波帯域電波吸収体です。 シリコーン樹脂をマトリクスとしているため、耐熱性に優れ、しかもアウトガス量を極限まで低減させております。
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EC-ECJ006-1105
10Gbps
40Gbps
10GHz
40GHz
EC-ECJ006
EC-ECJ006-1105
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Untitled
Abstract: No abstract text available
Text: CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication
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CHA3667aQDG
7-20GHz
CHA3667aQDG
A3667A
YYWW11
7-20GHz
20dBm
175mA
24L-QFN4X4
DSCHA3667aQDG0158
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PDF
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CHA3667
Abstract: No abstract text available
Text: CHA3667a RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Vd Description The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a
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CHA3667a
7-20GHz
CHA3667a
7-20GHz
DSCHA3667a0158
CHA3667
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PDF
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Untitled
Abstract: No abstract text available
Text: u n ite d monol i t hi c semiconductors * „ »A " « : * onco« C HA 20633 w.-.-.- 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description 4 The CHA2063a is a two-stage wide band monolithic low noise amplifier. u.m.s. The circuit is manufactured with a
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7-13GHz
CHA2063a
25pim
CMA2Q63q
8-13GHz
18dBm
DSCHA20639088
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CHA3667aQDG
Abstract: AN0017 MO-220 7-18GHz 7-20GHz qfn 88 718G CHA3667 QFN 64 PACKAGE rth
Text: CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication
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Original
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CHA3667aQDG
7-20GHz
CHA3667aQDG
A3667A
7-20GHz
20dBm
175mA
24L-QFN4X4
DSCHA3667aQDG0158
AN0017
MO-220
7-18GHz
qfn 88
718G
CHA3667
QFN 64 PACKAGE rth
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PDF
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CHA3667
Abstract: No abstract text available
Text: CHA3667a RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Vd Description The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a
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CHA3667a
7-20GHz
CHA3667a
7-20GHz
DSCHA3667a0158
CHA3667
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NF 838 G
Abstract: No abstract text available
Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
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CHA2063a
7-13GHz
CHA2063a
7-13GHz
8-13GHz
18dBm
DSCHA20630096
-05-Apr-00
NF 838 G
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DC1346
Abstract: No abstract text available
Text: PSM G E C P L E S S E Y DS3724-2.2 DC1346/46M/46S MILLIMETRE WAVE GaAs SCHOTTKY BARRIER BEAM LEAD MIXER DIODE The DC1346 GaAs Schottky Barrier Beam Lead Diode is manufactured using advanced epitaxial techniques. The Beam Leads are fabricated using a gold electroplating
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OCR Scan
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DS3724-2
DC1346/46M/46S
DC1346
30GHz
100GHz
100pm
150pm
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CHA3667aQDG
Abstract: AN0017 CHA3667
Text: CHA3667aQDG RoHs COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial
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Original
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CHA3667aQDG
7-20GHz
CHA3667aQDG
A3667A
7-20GHz
20dBm
DSCHA3667aQDG7296
AN0017
CHA3667
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PDF
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inp hemt power amplifier
Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
Text: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface
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CI0402
WR-10
CI0402
inp hemt power amplifier
NS 2P N218
94GHz
100ghz MMIC POWER AMPLIFIER hemt
94GHz amplifier
N218
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Untitled
Abstract: No abstract text available
Text: 37bflS22 GGlflMbD 375 « P L S B 5Ë GEC P L E S S E Y SEMICONDUCTORS DS3 724-2.2 DC1346/46M/46S MILLIMETRE WAVE GaAs SCHOTTKY BARRIER BEAM LEAD MIXER DIODE The DC1346 GaAs Schottky Barrier Beam Lead Diode is manufactured using advanced epitaxial techniques. The
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37bflS22
DC1346/46M/46S
DC1346
30GHz
100GHz
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Untitled
Abstract: No abstract text available
Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
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CHA2063a
7-13GHz
CHA2063a
7-13GHz
8-13GHz
18dBm
DSCHA20630096
-05-Apr-00
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PDF
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Untitled
Abstract: No abstract text available
Text: CHA2063 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
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CHA2063
7-13GHz
CHA2063
7-13GHz
8-13GHz
20dBm
DSCHA20636354
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NF 838 G
Abstract: CHA2063A
Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
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CHA2063a
7-13GHz
CHA2063a
7-13GHz
8-13GHz
18dBm
DSCHA20630096
-05-Apr-00
NF 838 G
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8-12GHz
Abstract: SS 1603 NF 838 G
Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and
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Original
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CHA2063a
7-13GHz
CHA2063a
7-13GHz
8-13GHz
18dBm
DSCHA20630096
-05-Apr-00
8-12GHz
SS 1603
NF 838 G
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ferrite rod antenna
Abstract: ferrite sheet Z1528 Mg-Zn Ferrites millimeter wave radar MgZn SOFT FERRITE POWDER jis z1528 loop antennas vhf FDK gps antenna DSRC absorber
Text: EMI SUPPRESSION SHEETS, ABSORBERS & ANECHOIC BOXES EC-ECE001-0208 Products and applicable frequency ranges EMI control products/frequency ranges Frequency 1MHz 10MHz 100MHz CISPR noise reg. 1GHz Onboard 100GHz VCCI, FCC, EN Cellular phones VHF, TV Applications
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EC-ECE001-0208
10MHz
100MHz
100GHz
10GHz
10Gbps
40Gbps
25GHz
SA00SP
htt67981
ferrite rod antenna
ferrite sheet
Z1528
Mg-Zn Ferrites
millimeter wave radar
MgZn SOFT FERRITE POWDER
jis z1528
loop antennas vhf
FDK gps antenna
DSRC absorber
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