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    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC

    NT5CB256

    Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CB256 NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8

    samsung ddr3

    Abstract: DDR3 DIMM 240 pinout DDR3-1066 DDR3-1333 K4B1G16 Design Guide for DDR3-1066 k4b1g08 K4B1G0846D K4B1G0446D DDR3-800-666
    Text: 1Gb DDR3 SDRAM K4B1G04 08/16 46D 1Gb D-die DDR3 SDRAM Specification 82 / 100 FBGA with Pb-free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.


    Original     		PDF K4B1G04 samsung ddr3 DDR3 DIMM 240 pinout DDR3-1066 DDR3-1333 K4B1G16 Design Guide for DDR3-1066 k4b1g08 K4B1G0846D K4B1G0446D DDR3-800-666

    NT5CB128M8CN

    Abstract: NT5CB256M4CN NT5CB128
    Text: 1Gb DDR3 SDRAM C-Die NT5CB256M4CN / NT5CB128M8CN Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF NT5CB256M4CN NT5CB128M8CN 78-Ball Rate32 NT5CB128M8CN NT5CB128

    NT5CB256M16bP-DI

    Abstract: NT5CB256M16 NT5CC512M8BN NT5CB512M8BN-CGI NT5CB512M8BN-DI NT5CB256M16BP-DII NT5CB256M16B T14C NT5CC512M8 NT5CC256M16BP
    Text: NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP Speed Bins -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Units tCK Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Clock Frequency


    Original     		PDF NT5CB512M8BN NT5CB256M16BP NT5CC512M8BN NT5CC256M16BP DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 NT5CB256M16bP-DI NT5CB256M16 NT5CB512M8BN-CGI NT5CB512M8BN-DI NT5CB256M16BP-DII NT5CB256M16B T14C NT5CC512M8 NT5CC256M16BP

    NT5CB256M8DN

    Abstract: NT5CB256m tl 555 c "2Gb DDR3 SDRAM" NT5CB256M8 NT5CB256 NT5CC256M8 NT5CC256
    Text: 2Gb DDR3 SDRAM D-Die NT5CB512M4DN / NT5CB256M8DN NT5CC512M4DN / NT5CC256M8DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF NT5CB512M4DN NT5CB256M8DN NT5CC512M4DN NT5CC256M8DN 78-Ball Rate32dex 78Balls NT5CB256m tl 555 c "2Gb DDR3 SDRAM" NT5CB256M8 NT5CB256 NT5CC256M8 NT5CC256

    NT5CB256M8GN

    Abstract: NT5CC256M8GN NT5CB256M8GN-DI NT5CC256M8GN-D NT5CC512M4GN NT5CC512M4GN-CG NT5CB256M8GN-CG "2Gb DDR3 SDRAM" NT5C NT5CB256M8
    Text: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard  Programmable Burst Length: 4, 8 Power Supply  8n-bit prefetch architecture VDD = VDDQ = 1.35V -0.0675V/+0.1V  Output Driver Impedance Control


    Original     		PDF NT5CB512M4GN NT5CB256M8GN NT5CC512M4GN NT5CC256M8GN 78Balls NT5CC256M8GN NT5CB256M8GN-DI NT5CC256M8GN-D NT5CC512M4GN-CG NT5CB256M8GN-CG "2Gb DDR3 SDRAM" NT5C NT5CB256M8

    NT5CC256

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM D-Die NT5CB512M4DN / NT5CB256M8DN NT5CC512M4DN / NT5CC256M8DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF NT5CB512M4DN NT5CB256M8DN NT5CC512M4DN NT5CC256M8DN NT5CC256

    Untitled

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ*/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP DDR3-1866 DDR3-2133 x8/78

    N2CB2G40DN

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM D-Die N2CB2G40DN / N2CB2G80DN N2CC2G40DN / N2CC2G80DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF N2CB2G40DN N2CB2G80DN N2CC2G40DN N2CC2G80DN 78Balls

    NT5CB128m16FP

    Abstract: nt5cb256m8fn NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Feature   Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control Backward compatible to VDD= VDDQ= 1.5V  Differential bidirectional data strobe


    Original     		PDF NT5CB256M8FN NT5CB128M16FP NT5CC256M8FN NT5CC128M16FP x8/78 NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F

    NT5CB256M16

    Abstract: NT5CC256M16 4Gb DDR3 SDRAM nanya ddr3 DDR3 DIMM SPD JEDEC
    Text: 4Gb DDR3 SDRAM B-Die NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP CAS Latency Frequency -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Speed Bins Units tCK Parameter Min. Max. Min.


    Original     		PDF NT5CB512M8BN NT5CB256M16BP NT5CC512M8BN NT5CC256M16BP DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 NT5CB256M16 NT5CC256M16 4Gb DDR3 SDRAM nanya ddr3 DDR3 DIMM SPD JEDEC

    NT5CC256

    Abstract: NT5CB256M8GN- CG
    Text: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  1.35V -0.0675V/+0.1V & 1.5V ± 0.075V JEDEC  Output Driver Impedance Control Standard Power Supply  Differential bidirectional data strobe  8 Internal memory banks (BA0- BA2)


    Original     		PDF NT5CB512M4GN NT5CB256M8GN NT5CC512M4GN NT5CC256M8GN 78Balls NT5CC256 NT5CB256M8GN- CG

    NT5CB256M8bN-cg

    Abstract: calibration of dvm specifications NT5CB128M16BP-DI
    Text: 2Gb DDR3 SDRAM NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP Feature Table 1: CAS Latency Frequency -BE* -CG/CGI* -DI* -EJ* DDR3 L -1066-CL7 DDR3 (L)-1333-CL9 DDR3(L)-1600-CL11 Speed Bins Units DDR3-1866-CL12 Parameter Min. Max. Min. Max. Min. Max.


    Original     		PDF NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP -1066-CL7 -1333-CL9 -1600-CL11 DDR3-1866-CL12 DDR3-1600 DDR3-1866 NT5CB256M8bN-cg calibration of dvm specifications NT5CB128M16BP-DI

    A110 E

    Abstract: TSW11
    Text: Preliminary 512Mb DDR3 SDRAM K4B510846E 512Mb E-die DDR3 SDRAM Specification Revision 0.5 December 2006 CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.


    Original     		PDF K4B510846E 512Mb A110 E TSW11

    NT5CB64M16AP-BE

    Abstract: No abstract text available
    Text: NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP 1Gb DDR3 SDRAM A-Die Features • VDD=VDDQ=1.5V ± 0.075V JEDEC Standard Power Supply • Write Leveling • OCD Calibration • 8 internal banks (BA0 - BA2) • Dynamic ODT (Rtt_Nom & Rtt_WR) • Differential clock inputs (CK, CK)


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP NT5CB64M16AP-BE

    Untitled

    Abstract: No abstract text available
    Text: NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP 2Gb DDR3 SDRAM F-Die Feature


    Original     		PDF NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP -1066-CL7 -1333-CL9 -1600-CL11 DDR3-1866-CL12

    Untitled

    Abstract: No abstract text available
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP Feature   Output Driver Impedance Control  Differential bidirectional data strobe  Internal self calibration:Internal self calibration Backward compatible to VDD= VDDQ= 1.5V


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP

    NT5CB256

    Abstract: srt 8n JESD79-3 NT5CB128M8CN NT5CB128M8CN-CG NT5CB128M TI ddr3 controller datasheet NT5CB128
    Text: 1Gb DDR3 SDRAM C-Die NT5CB256M4CN / NT5CB128M8CN Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF NT5CB256M4CN NT5CB128M8CN 78-Ball NT5CB256 srt 8n JESD79-3 NT5CB128M8CN NT5CB128M8CN-CG NT5CB128M TI ddr3 controller datasheet NT5CB128

    nt5cb64m16

    Abstract: NT5CB64m NT5CB64M16AP NT5CB64 NT5CB64M16AP-CF NT5CB64M16AP-BE nanya NT5CB64M16AP NT5CB256M4AN NT5CB64M16AP-CG NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 78-Ball 96-Ball nt5cb64m16 NT5CB64m NT5CB64M16AP NT5CB64 NT5CB64M16AP-CF NT5CB64M16AP-BE nanya NT5CB64M16AP NT5CB64M16AP-CG NT5CB64M16AP-AC

    NT5CB128M16BP-DI

    Abstract: NT5CB256M8 nt5cb128m16 NT5CC128M16BP NT5CB256M8BN NT5CB512M4BN NT5CB128M NT5CB256M8BN-DI NT5CB128 NT5CC256
    Text: 2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF NT5CB512M4BN NT5CB256M8BN NT5CB128M16BP NT5CC512M4BN NT5CC256M8BN NT5CC128M16BP 78-Ball 96-Ball NT5CB128M16BP-DI NT5CB256M8 nt5cb128m16 NT5CC128M16BP NT5CB128M NT5CB256M8BN-DI NT5CB128 NT5CC256

    NT5CB1024M4BN-DI

    Abstract: DDR2 module Dimensions NT5CC256
    Text: 4Gb DDR3 SDRAM B-Die NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP Feature  VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard  8n-bit prefetch architecture Power Supply  Output Driver Impedance Control VDD = VDDQ = 1.35V -0.0675V/+0.1V


    Original     		PDF NT5CB1024M4BN NT5CB512M8BN NT5CB256M16BP NT5CC1024M4BN NT5CC512M8BN NT5CC256M16BP NT5CB1024M4BN-DI DDR2 module Dimensions NT5CC256

    NT5CB256M16

    Abstract: NT5CC256M16CP-DI NT5CB256M16CP NT5CB256M16CP-DI NT5CC512M8 NT5CB512M8CN-CG NT5CC256M16 wrs4 NT5CB512M8CN NT5CB256
    Text: 4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature  VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard  8n-bit prefetch architecture Power Supply  Output Driver Impedance Control VDD = VDDQ = 1.35V -0.0675V/+0.1V


    Original     		PDF NT5CB1024M4CN NT5CB512M8CN NT5CB256M16CP NT5CC1024M4CN NT5CC512M8CN NT5CC256M16CP NT5CB256M16 NT5CC256M16CP-DI NT5CB256M16CP-DI NT5CC512M8 NT5CB512M8CN-CG NT5CC256M16 wrs4 NT5CB256

    nt5cb128m16

    Abstract: NT5CB128M16BP-CGI
    Text: NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP 2Gb DDR3 SDRAM B-Die Feature Table 1: CAS Latency Frequency Speed Bins -BE* -CG/CGI* -DI* -EJ* DDR3 L -1066-CL7 DDR3 (L)-1333-CL9 DDR3(L)-1600-CL11 DDR3-1866-CL12 Units Parameter Min. Max. Min. Max. Min.


    Original     		PDF NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP -1066-CL7 78-Balls 96-Balls nt5cb128m16 NT5CB128M16BP-CGI